Process for forming layers on substrates
First Claim
1. An apparatus for heating and forming layers on semiconductor wafers comprising:
- a thermal processing chamber adapted to contain a semiconductor wafer;
a heating device in communication with the thermal processing chamber for heating a semiconductor wafer contained in said chamber, said heating device comprising a plurality of lamps, said lamps emitting at least ultraviolet light;
a nozzle for introducing a precursor material into said thermal processing chamber, said precursor material forming a coating on said semiconductor wafer;
a sonic energy device supplying sonic energy to said precursor material as said precursor material passes through said nozzle; and
wherein the nozzle and sonic energy device are configured to emit the precursor material directly onto a semiconductor wafer contained in the thermal processing chamber.
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Accused Products
Abstract
The present invention is generally directed to various processes and systems for forming layers and coatings on substrates, such as semiconductor wafers and solar cells. In one embodiment, the process of the present invention is directed to forming a layer on a substrate from a liquid precursor. The liquid precursor is atomized and exposed to light energy. Besides light energy, the parent material may also be exposed to an electric field and/or to sonic energy. In an alternative embodiment of the present invention a stress measurement device monitors stress in the substrate as a layer is deposited on the substrate. This stress measurement information is then sent to a controller for automatically controlling the amount of energy, such as light energy being emitted onto the substrate.
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Citations
22 Claims
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1. An apparatus for heating and forming layers on semiconductor wafers comprising:
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a thermal processing chamber adapted to contain a semiconductor wafer;
a heating device in communication with the thermal processing chamber for heating a semiconductor wafer contained in said chamber, said heating device comprising a plurality of lamps, said lamps emitting at least ultraviolet light;
a nozzle for introducing a precursor material into said thermal processing chamber, said precursor material forming a coating on said semiconductor wafer;
a sonic energy device supplying sonic energy to said precursor material as said precursor material passes through said nozzle; and
wherein the nozzle and sonic energy device are configured to emit the precursor material directly onto a semiconductor wafer contained in the thermal processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An apparatus for heating and forming layers on semiconductor wafers comprising:
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a thermal processing chamber adapted to contain a semiconductor wafer;
a heating device in communication with said thermal processing chamber for heating a semiconductor wafer contained in said chamber, said heating device comprising a plurality of lamps, said lamps emitting at least ultraviolet light;
a nozzle for introducing a precursor material into said thermal processing chamber, said precursor material forming a coating on said semiconductor wafer;
a magnetic field device located within said thermal processing chamber, said magnetic field device being configured to create a magnetic field in a manner that causes said precursor material to deposit on said semiconductor wafer according to a predetermined pattern. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification