Device for gas sensing

• US 6,569,779 B1
• Filed: 01/08/2001
• Issued: 05/27/2003
• Est. Priority Date: 05/08/1998
• Status: Expired due to Fees

• Current Assignee: Nordic Sensor Technologies AB
• Original Assignee: Nordic Sensor Technologies AB
• Inventors: Mårtensson, Per, Lundström, Ingemar
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): STEVENSON, ANDRE C
• Application Number:
  US09/674,871
• Time in Patent Office: 869 Days
• Field of Search: 438/482, 438/166, 438/785, 438/619, 438/245, 257/295, 333/186, 437/210, 735/041.3
• US Class Current: 438/745
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

In order to obtain long time stability and usefulness for gas sensitive field-effect devices a micro structured surface is obtained below the final conducting layer. The conductive layer in the trenches or grooves will not only be protected to some extent but also they can constitute a conductive net with edges or boundaries that will remain essentially unchanged even if material is continuously lost along the borderline. The structure can be obtained in the layer laying directly below the conductive layer or in deeper lying layers with intermediate layers with even thickness.

Claims

1. A method for the fabrication of a catalytic field-effect sensor which comprises patterning a substrate to form thereon a micro structured surface having a pattern of interconnected grooves or channels, and depositing a conductive layer over the micro structured surface.

2. A method according to claim 1, wherein the micro structured surface is formed on a semiconducting substrate.

3. A method according to claim 1, wherein the micro structured surface is formed on an insulating layer.

4. A method according to claim 1, wherein the micro structured surface is formed by masking, lithography or etching.

5. A method according to claim 1, wherein the micro structured surface is formed by deposition.

6. A method according to claim 5, wherein the deposition comprises sputtering.

7. A method according to claim 4, wherein the micro structured surface is formed by electrochemical or photo-electrochemical etching.

8. A method according to claim 1, wherein the micro structured surface is formed by fast drying or heating so that it cracks.

9. A method according to claim 1, and further including a step of heating the sensor so that the outer conductive layer is restructured to a stable configuration with essentially only conductive material in the trenches or channels in continuous contact over the sensor area.

10. A method according to claim 1, and further including a polishing step in which the conductive layer on protrusions or ridges of the micro structure is worked away.

11. A method according to claim 10, wherein said polishing is conducted by mechanical or sputter polishing at an oblique angle of incidence.

12. A method according to claim 4, wherein the micro structured surface is formed by anistropic etching.

13. A catalytic field-effect sensor having an outer conductive layer arranged on a micro structured surface, wherein the micro structured surface comprises a pattern of interconnected grooves or channels.

14. A sensor according to claim 13, wherein the outer conductive layer is polished away from the tops or protrusions of the micro structure so that the conductive layer has a pattern of an interconnected net of conductive material that is recessed into an underlying layer.

15. A method for the fabrication of a catalytic field-effect sensor comprising depositing a conductive layer over a micro structured surface on a substrate, and polishing the conductive layer to work conductive material from protrusions or ridges on the micro structured surface.

16. A method according to claim 15, wherein the micro structured surface is formed on a semiconducting substrate.

17. A method according to claim 15, wherein the micro structured surface is formed on an insulating layer.

18. A method according to claim 15, wherein the micro structured surface is formed by masking, lithography or etching.

19. A method according to claim 15, wherein the micro structured surface is formed by deposition.

20. A method according to claim 19, wherein the deposition comprises sputtering.

21. A method according to claim 15, wherein the micro structured surface is formed by electrochemical or photo-electrochemical etching.

22. A method according to claim 15, wherein the micro structured surface is formed by fast drying or heating so that it cracks.

23. A method according to claim 15, and further including a step of heating the sensor so that the outer conductive layer is restructured to a stable configuration with essentially only conductive material in trenches or channels in the structure in continuous contact over the sensor area.

24. A method according to claim 15, wherein said polishing is conducted by mechanical or sputter polishing at an oblique angle of incidence.

25. A method according to claim 19, wherein the micro structured surface is formed by anistropic etching.