Graded composition diffusion barriers for chip wiring applications
First Claim
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1. A method for forming a semiconductor device structure, the method comprising:
- depositing a barrier film on a region of electrically insulating material, the barrier film comprising a compound including nitrogen and at least one of titanium or tantalum, nitrogen in a concentration that varies within the barrier film, and oxygen in a concentration that varies within the barrier film; and
depositing an electrically conducting material on at least a portion of the barrier film, wherein said step of depositing a barrier film includes varying the nitrogen content in the barrier film from about 30% to about 60% in atomic percent in the vicinity of the region of insulating material to about 0% in atomic percent in the vicinity of the region of the electrically conducting material, and varying the oxygen content in the barrier film from about 1% to about 5% in the vicinity of the region of insulating material to about 0% in atomic percent in the vicinity of the region of electrically conducting material.
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Abstract
A barrier film for a semiconductor device structure. The barrier film includes a compound including nitrogen and at least one of titanium or tantalum, nitrogen in a concentration that varies within the barrier film, and oxygen in a concentration that varies within the barrier film.
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4 Claims
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1. A method for forming a semiconductor device structure, the method comprising:
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depositing a barrier film on a region of electrically insulating material, the barrier film comprising a compound including nitrogen and at least one of titanium or tantalum, nitrogen in a concentration that varies within the barrier film, and oxygen in a concentration that varies within the barrier film; and
depositing an electrically conducting material on at least a portion of the barrier film, wherein said step of depositing a barrier film includes varying the nitrogen content in the barrier film from about 30% to about 60% in atomic percent in the vicinity of the region of insulating material to about 0% in atomic percent in the vicinity of the region of the electrically conducting material, and varying the oxygen content in the barrier film from about 1% to about 5% in the vicinity of the region of insulating material to about 0% in atomic percent in the vicinity of the region of electrically conducting material. - View Dependent Claims (2, 3, 4)
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