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Semiconductor metal interconnect reliability test structure

  • US 6,570,181 B1
  • Filed: 10/24/2000
  • Issued: 05/27/2003
  • Est. Priority Date: 12/07/1999
  • Status: Active Grant
First Claim
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1. A semiconductor reliability test structure formed on a face of a semiconductor substrate, comprising:

  • a chain including a plurality of long test links formed of a first semiconductor material, the plurality of long test links being alternately interconnected by a plurality of short connecting links formed of a second semiconductor material, the chain having first and second ends wherein the long test links are formed in a first layer and the short connecting links are formed in a second layer, a plurality of vias connecting the first and second layers of the long and short connecting links; and

    first and second bond pads coupled to the first and second ends of the chain, respectively.

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