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Bonding of silicon wafers

  • US 6,570,221 B1
  • Filed: 07/27/1993
  • Issued: 05/27/2003
  • Est. Priority Date: 07/27/1993
  • Status: Expired due to Fees
First Claim
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1. A multi-layer semiconductor, comprising:

  • a first semiconductor wafer comprising a micro-machined sensor;

    a second semiconductor wafer comprising a surface;

    a second semiconductor device on the surface; and

    a layer of cross-linked siloxane polymer sandwiched between the first semiconductor wafer and the surface, wherein;

    the layer of cross-linked siloxane polymer bonds the first and second semiconductor wafers together; and

    the layer of cross-linked siloxane polymer is formed through spin-on-glass.

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