Resonator frequency correction by modifying support structures

• US 6,570,468 B2
• Filed: 06/29/2001
• Issued: 05/27/2003
• Est. Priority Date: 06/29/2001
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Rao, Valluri R., Ma, Qing, Cheng, Peng
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): Summons, Barbara
• Application Number:
  US09/895,360
• Publication Number:
  US 20030001694A1
• Time in Patent Office: 697 Days
• Field of Search: 333/186-192, 333/200, 310/312, 735/79
• US Class Current: 333/188
• CPC Class Codes: H03H 3/0077 by tuning of resonance frequency
• CPC Class Codes: H03H 9/2463 Clamped-clamped beam resonators
• CPC Class Codes: Y10S 977/70 Nanostructure
• CPC Class Codes: Y10S 977/721 On a silicon substrate
• CPC Class Codes: Y10S 977/733 Nanodiaphragm
• CPC Class Codes: Y10S 977/888 Shaping or removal of materials, e.g. etching
• CPC Class Codes: Y10S 977/889 by laser ablation

Abstract

A method including to a resonator coupled to at least one support structure on a substrate, the resonator having a resonating frequency in response to a frequency stimulus, modifying the resonating frequency by modifying the at least one support structure. A method including forming a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. A method including applying a frequency stimulus to a resonator coupled to at least one support structure on a chip-level substrate determining a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. An apparatus including a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency tuned by the modification of the at least one support structure to a selected frequency stimulus.

Claims

1. A method comprising:

modifying a resonating frequency of a resonator coupled to at least one support structure on a chip-level substrate by modifying at least one support structure, wherein the at least one support structure comprises a body including a base coupled to the substrate and a top surface opposite the base, and modifying the at least one support structure comprises forming a notch in the top surface.

2. The method of claim 1, wherein forming the notch comprises forming the notch through less than the entire body of the at least one support structure.

3. The method of claim 1, further comprising coupling a first end of said resonator to a first support structure and coupling a second end of said resonator to a second support structure.

4. The method of claim 1, wherein forming a notch comprises forming a first notch in a first direction and a second notch in a second direction.

5. A method comprising:

forming a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency; and

modifying the resonating frequency of the resonator by modifying the at least one support structure, wherein the at least one support structure comprises a body including a base coupled to the substrate and a top surface opposite the base, and modifying the at least one support structure comprises forming a notch in the top surface.

6. The method of claim 5, wherein forming a notch comprises forming a first notch in a first direction and a second notch in a second direction.

7. The method of claim 5, wherein forming the notch comprises forming the notch through less than the entire body of the at least one support structure.

8. The method of claim 5, wherein forming a resonator comprises coupling a first end of said resonator to a first support structure and coupling a second end of said resonator to a second support structure.

9. An apparatus comprising:

a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency tuned by the modification of the at least one support structure to a selected frequency stimulus, wherein the at least one support structure comprises a body, with a base of the body coupled to the substrate and at least one notch formed in a portion of the body.

10. The apparatus of claim 9, wherein the resonator is coupled at a first end to a first support structure and at a second end to a second support structure.

11. The apparatus of claim 9, wherein the at least one notch extends through less than the entire portion of the body.

12. The apparatus of claim 9, wherein the at least one support structure comprises a first notch in a first direction and a second notch in a second direction.

13. A method comprising:

applying a frequency stimulus to a resonator coupled to at least one support structure on a chip-level substrate;

determining a resonating frequency; and

modifying the resonating frequency of the resonator by modifying the at least one support structure, wherein the at least one support structure comprises a body including a base coupled to the substrate and a top surface opposite the base, and modifying the at least one support structure comprises forming a notch in the top surface.

14. The method of claim 13, further comprising coupling a first end of said resonator to a first support structure and coupling a second end of said resonator to a second support structure.

15. The method of claim 13, wherein forming a notch comprises forming a first notch in a first direction and a second notch in a second direction.

16. The method of claim 13, wherein forming the notch comprises forming the notch through less than the entire body of the at least one support structure.