Method for manufacturing a semiconductor device by performing a heat-treatment in a hydrogen atmosphere

• US 6,573,195 B1
• Filed: 01/24/2000
• Issued: 06/03/2003
• Est. Priority Date: 01/26/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Yamazaki, Shunpei, Kitakado, Hidehito, Asami, Taketomi
• Primary Examiner(s): Fourson, Georgia
• Assistant Examiner(s): Pham, Thanh V
• Application Number:
  US09/490,974
• Time in Patent Office: 1,226 Days
• Field of Search: 438/622, 438/769, 438/783, 438/786, 438/FOR.201, 438/FOR.355, 438/FOR.434, 438/151-166, 438/197, 438/48, 438/22
• US Class Current: 438/783
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 21/0214 the material being a silicon oxynitride, e.g. SiON or SiON:H
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/3003 Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
• CPC Class Codes: H01L 21/3144 on silicon
• CPC Class Codes: H01L 21/3145 formed by deposition from a gas or vapour
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78621 : with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 : with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD

Abstract

In fabricating a semiconductor device, a hydrogen-containing first insulating film is formed over a semiconductor layer, a gate insulating film and a gate electrode, and a first heat-treatment in a hydrogen atmosphere is performed. A second insulating film can be formed on the first insulating film, and a second heat-treatment in a hydrogen atmosphere performed. A hydrogen-containing third insulating film can be formed on the second insulating film, and a third heat-treatment in an atmosphere containing hydrogen or nitrogen performed. By these methods, damages to a semiconductor layer caused by hydrogenation can be avoided.

Claims

1. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming an insulating film containing hydrogen over said gate electrode and said gate insulating film; and

heating said insulating film containing hydrogen in a hydrogen atmosphere thereby diffusing hydrogen contained in said insulating film into said semiconductor layer.

22. A method of fabricating a semiconductor device according to claim 1, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

23. A method of fabricating a semiconductor device according to claim 1, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

2. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a first insulating film containing hydrogen over said gate electrode and said gate insulating film; and

forming a second insulating film on said first insulating film; and

performing a heat-treatment in a hydrogen atmosphere thereby diffusing hydrogen contained in said first insulating film into said semiconductor layer.

7. A method of fabricating a semiconductor device according to claim 2, wherein said first insulating film comprises a silicon nitride oxide film.

8. A method of fabricating a semiconductor device according to claim 2, wherein said second insulating film comprises a silicon nitride oxide film.

10. A method of fabricating a semiconductor device according to claim 7, wherein a carbon concentration in each of said first and second insulating films is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

47. A method of fabricating a semiconductor device according to claim 48, wherein a carbon concentration in said hydrogen-containing insulating film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

48. A method of fabricating a semiconductor device according to claim 2, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

59. A method of fabricating a semiconductor device according to claim 2, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

3. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a first insulating film containing hydrogen over said gate electrode and said gate insulating film;

performing a first heat-treatment in a hydrogen atmosphere thereby diffusing hydrogen contained in said first insulating film into said semiconductor layer;

forming a second insulating film on said first insulating film; and

performing a second heat-treatment in a hydrogen atmosphere after forming said second insulating film.

24. A method of fabricating a semiconductor device according to claim 3, wherein said first insulating film comprises a silicon nitride oxide film.

28. A method of fabricating a semiconductor device according to claim 3, wherein said second insulating film comprises a silicon nitride oxide film.

33. A method of fabricating a semiconductor device according to claim 24, wherein a carbon concentration in each of said first and second insulating films is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

49. A method of fabricating a semiconductor device according to claim 3, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

60. A method of fabricating a semiconductor device according to claim 3, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

4. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a first insulating film over said gate electrode and said gate insulating film;

performing a heat-treatment in a hydrogen atmosphere after forming said first insulating film thereby diffusing hydrogen contained in said first insulating film into said semiconductor layer;

forming a second insulating film containing hydrogen on said first insulating film; and

performing a heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said second insulating film.

9. A method of fabricating a semiconductor device according to claim 4, wherein said third insulating film comprises a silicon nitride oxide film or a silicon nitride film.

25. A method of fabricating a semiconductor device according to claim 4, wherein said first insulating film comprises a silicon nitride oxide film.

34. A method of fabricating a semiconductor device according to claim 25, wherein a carbon concentration in each of said first and second insulating films is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

50. A method of fabricating a semiconductor device according to claim 4, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

61. A method of fabricating a semiconductor device according to claim 4, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

5. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a first insulating film containing hydrogen over said gate electrode and said gate insulating film;

forming a second insulating film on said first insulating film;

performing a heat-treatment in a hydrogen atmosphere after forming said second insulating film thereby diffusing hydrogen contained in said first insulating film into said semiconductor layer;

forming a third insulating film containing hydrogen on said second insulating film; and

performing a heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said third insulating film.

26. A method of fabricating a semiconductor device according to claim 5, wherein said first insulating film comprises a silicon nitride oxide film.

29. A method of fabricating a semiconductor device according to claim 5, wherein said second insulating film comprises a silicon nitride oxide film.

31. A method of fabricating a semiconductor device according to claim 5, wherein said third insulating film comprises a silicon nitride oxide film or a silicon nitride film.

35. A method of fabricating a semiconductor device according to claim 26, wherein a carbon concentration in each of said first, second and third insulating films is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

51. A method of fabricating a semiconductor device according to claim 5, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

62. A method of fabricating a semiconductor device according to claim 5, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

6. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a first insulating film over said gate electrode and said gate insulating film;

performing a first heat-treatment in a hydrogen atmosphere after forming said first insulating film thereby diffusing hydrogen contained in said first insulating film into said semiconductor layer;

forming a second insulating film on said first insulating film;

performing a second heat-treatment in a hydrogen atmosphere after forming said second insulating film;

forming a third insulating film containing hydrogen on said second insulating film; and

performing a third heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said third insulating film.

27. A method of fabricating a semiconductor device according to claim 6, wherein said first insulating film comprises a silicon nitride oxide film.

30. A method of fabricating a semiconductor device according to claim 6, wherein said second insulating film comprises a silicon nitride oxide film.

32. A method of fabricating a semiconductor device according to claim 6, wherein said third insulating film comprises a silicon nitride oxide film or a silicon nitride film.

36. A method of fabricating a semiconductor device according to claim 27, wherein a carbon concentration in each of said first, second and third insulating films is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

52. A method of fabricating a semiconductor device according to claim 6, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

63. A method of fabricating a semiconductor device according to claim 6, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

11. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer formed over a substrate;

forming a gate insulating film formed over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a silicon nitride oxide film from silane, nitrous oxide and ammonia over said gate electrode and said gate insulating film; and

performing a heat-treatment in a hydrogen atmosphere after forming said silicon nitride oxide film thereby diffusing hydrogen contained in said silicon nitride oxide film into said semiconductor layer.

18. A method of fabricating a semiconductor device according to claim 11, wherein a carbon concentration in said first silicon nitride oxide film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

53. A method of fabricating a semiconductor device according to claim 11, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

64. A method of fabricating a semiconductor device according to claim 11, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

12. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia said gate electrode and said gate insulating film;

forming a second silicon nitride oxide film from silane and nitrous oxide on said first silicon nitride oxide film; and

performing a heat-treatment in a hydrogen atmosphere after forming said second silicon nitride oxide film thereby diffusing hydrogen contained in said first silicon nitride oxide film into said semiconductor layer.

19. A method of fabricating a semiconductor device according to claim 12, wherein a carbon concentration in said second silicon nitride oxide film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

39. A method of fabricating a semiconductor device according to claim 12, wherein a carbon concentration in said first silicon nitride oxide film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

54. A method of fabricating a semiconductor device according to claim 12, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

65. A method of fabricating a semiconductor device according to claim 12, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

13. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia over said gate electrode and said gate insulating film;

performing a first heat-treatment in a hydrogen atmosphere after forming said first silicon nitride oxide film thereby diffusing hydrogen contained in said first silicon nitride oxide film into said semiconductor layer;

forming a second silicon nitride oxide film from silane and nitrous oxide on said first silicon nitride oxide film; and

performing a second heat-treatment in a hydrogen atmosphere after forming said second silicon nitride oxide film.

40. A method of fabricating a semiconductor device according to claim 13, wherein a carbon concentration in said first silicon nitride oxide film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

44. A method of fabricating a semiconductor device according to claim 13, wherein a carbon concentration in said second silicon nitride oxide film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

55. A method of fabricating a semiconductor device according to claim 13, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

66. A method of fabricating a semiconductor device according to claim 13, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

14. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia over said gate electrode and said gate insulating film;

performing a first heat-treatment in a hydrogen atmosphere after forming said first silicon nitride oxide film thereby diffusing hydrogen contained in said first silicon nitride oxide film into said semiconductor layer;

forming a hydrogen-containing insulating film on said first silicon nitride oxide film; and

performing a second heat-treatment in an atmosphere containing hydrogen or nitrogen after said forming said hydrogen-containing insulating film.

17. A method of fabricating a semiconductor device according to claim 14, wherein said hydrogen-containing insulating film is a silicon nitride oxide film formed from silane, nitrous oxide and ammonia or a silicon nitride film formed from silane, ammonia and nitrogen.

21. A method of fabricating a semiconductor device according to claim 17, wherein a carbon concentration in said hydrogen-containing insulating film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

41. A method of fabricating a semiconductor device according to claim 14, wherein a carbon concentration in said first silicon nitride oxide film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

56. A method of fabricating a semiconductor device according to claim 14, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

67. A method of fabricating a semiconductor device according to claim 14, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

15. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia over said gate electrode and said gate insulating film;

forming a second silicon nitride oxide film from silane and nitrous oxide on said first silicon nitride oxide film;

performing a first heat-treatment in a hydrogen atmosphere after forming said second silicon nitride oxide film thereby diffusing hydrogen contained in said first silicon nitride oxide film into said semiconductor layer;

forming a hydrogen-containing insulating film on said second silicon nitride oxide film; and

performing a second heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said hydrogen-containing insulating film.

20. A method of fabricating a semiconductor device according to claim 15, wherein a carbon concentration in said second silicon nitride oxide film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

37. A method of fabricating a semiconductor device according to claim 15, wherein said hydrogen-containing insulating film is a silicon nitride oxide film formed from silane, nitrous oxide and ammonia or a silicon nitride film formed from silane, ammonia and nitrogen.

42. A method of fabricating a semiconductor device according to claim 15, wherein a carbon concentration in said first silicon nitride oxide film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

46. A method of fabricating a semiconductor device according to claim 37, wherein a carbon concentration in said hydrogen-containing insulating film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

57. A method of fabricating a semiconductor device according to claim 15, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

68. A method of fabricating a semiconductor device according to claim 15, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.

16. A method of fabricating a semiconductor device comprising the steps of:

forming a semiconductor layer over a substrate;

forming a gate insulating film over said semiconductor layer;

forming a gate electrode over said gate insulating film;

forming a first silicon nitride oxide film from silane, nitrous oxide and ammonia over said gate electrode and said gate insulating film;

performing a first heat-treatment in a hydrogen atmosphere after forming said first silicon nitride oxide film thereby diffusing hydrogen contained in said first silicon nitride oxide film into said semiconductor layer;

forming a second silicon nitride oxide film from silane and nitrous oxide on said first silicon nitride oxide film;

performing a second heat-treatment in a hydrogen atmosphere after forming said second insulating film;

forming a hydrogen-containing insulating film on said second silicon nitride oxide film; and

performing a third heat-treatment in an atmosphere containing hydrogen or nitrogen after forming said hydrogen-containing insulating film.

38. A method of fabricating a semiconductor device according to claim 16, wherein said hydrogen-containing insulating film is a silicon nitride oxide film formed from silane, nitrous oxide and ammonia or a silicon nitride film formed from silane, ammonia and nitrogen.

43. A method of fabricating a semiconductor device according to claim 16, wherein a carbon concentration in said first silicon nitride oxide film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

45. A method of fabricating a semiconductor device according to claim 16, wherein a carbon concentration in said second silicon nitride oxide film is not greater than 2×

10¹⁹cm<sup>−

3</sup>.

58. A method of fabricating a semiconductor device according to claim 16, wherein said semiconductor device is a liquid crystal display device, an EL display device or an image sensor.

69. A method of fabricating a semiconductor device according to claim 16, wherein said semiconductor device is incorporated into a cellular telephone, a video camera, a mobile computer, a head mount display, a projector, a portable book, a digital camera, a car navigation system or a personal computer.