×

Semiconductor device, semiconductor gate array, electro-optical device, and electronic equipment

  • US 6,573,533 B1
  • Filed: 07/11/2000
  • Issued: 06/03/2003
  • Est. Priority Date: 07/16/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a supporting substrate having insulation at least at a surface thereof;

    a semiconductor layer formed on the surface of the supporting substrate;

    a transistor formed in the semiconductor layer, the transistor comprising a channel region of a first conductive type formed on the surface of the supporting substrate, a source region and a drain region of a second conductive type formed on the surface of the supporting substrate so as to sandwich the channel region, an insulating layer formed on the channel region, and an electrode formed on the insulating layer;

    a first semiconductor region provided on the surface of the supporting substrate at least at one end in a channel width direction along both of the source region and the drain region;

    a second semiconductor region of the first conductive type provided on the surface of the supporting substrate so as to sandwich the first semiconductor region by the source region and the drain region along the first semiconductor region, the second semiconductor region having an impurity concentration which is higher than that in the channel region, and the first semiconductor region having an impurity concentration which is lower than that in the source region and the drain region and is lower than that in the second semiconductor region; and

    an LDD region of the second conductive type formed between the channel region and the source region and between the channel region and drain region, the first semiconductor region being a semiconductor of the second conductive type and having an impurity concentration which is the same as that in the LDD region.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×