Highly reflective ohmic contacts to III-nitride flip-chip LEDs
First Claim
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1. A light-emitting device comprising:
- a III-nitride device comprising an n-type layer, a p-type layer, and an emission layer, interposing the n-type and p-type layers, being operative to emit light λ
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an n-electrode connected to the n-type layer and a p-electrode connected to the p-type layer, wherein both the n-electrode and the p-electrode are formed on a same side of the device and the n-electrode has a normal incidence reflectivity exceeding 80% for light emitted by the emission layer.
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Abstract
An inverted III-nitride light-emitting device (LED) with highly reflective ohmic contacts includes n- and p-electrode metallizations that are opaque, highly reflective, and provide excellent current spreading. The n- and p-electrodes each absorb less than 25% of incident light per pass at the peak emission wavelength of the LED active region.
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Citations
19 Claims
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1. A light-emitting device comprising:
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a III-nitride device comprising an n-type layer, a p-type layer, and an emission layer, interposing the n-type and p-type layers, being operative to emit light λ
; and
an n-electrode connected to the n-type layer and a p-electrode connected to the p-type layer, wherein both the n-electrode and the p-electrode are formed on a same side of the device and the n-electrode has a normal incidence reflectivity exceeding 80% for light emitted by the emission layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
wherein light escapes the device through the substrate. -
11. A light-emitting device, as defined in claim 10, wherein the substrate comprises sapphire.
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12. A light-emitting device, as defined in claim 10, wherein the substrate comprises silicon carbide.
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13. A light-emitting device, as defined in claim 10, wherein the substrate comprises gallium nitride.
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14. A light-emitting device, as defined in claim 1, wherein the n-electrode further comprises a first portion and a second portion, wherein the p-electrode interposes the first and second portion.
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15. A light-emitting device, as defined in claim 14, wherein the first and second portions are substantially parallel, the n-electrode further comprising a third portion substantially perpendicular to the first and second portions and connecting the first and section portions.
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16. A light-emitting device, as defined in claim 1, wherein the p-electrode further comprises a first portion and a second portion, wherein the n-electrode interposes the first and second portion.
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17. A light-emitting device, as defined in claim 1, wherein an area of the p-electrode is at least five times an area of the n-electrode.
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18. A light-emitting device, as defined in claim 1, wherein the p-electrode comprises at least 50% of a surface area of the device.
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19. A light-emitting device, as defined in claim 1, wherein the n-electrode comprises about 10% to about 15% of a surface area of the device.
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Specification