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SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs

  • US 6,573,563 B2
  • Filed: 06/01/2001
  • Issued: 06/03/2003
  • Est. Priority Date: 02/07/2001
  • Status: Expired due to Term
First Claim
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1. A silicon-on-insulator (SOI) semiconductor integrated circuit formed on an SOI substrate including a supporting substrate, a buried insulating layer on the supporting substrate and a semiconductor layer of a first conductivity type on the buried insulating layer, the integrated circuit comprising:

  • a plurality of transistor active regions in a predetermined region of the semiconductor layer, the plurality of transistor active regions being of the same transistor conductivity type;

    at least one body contact active region spaced apart from the transistor active regions, the body contact active region including a portion of the semiconductor layer;

    a semiconductor residue layer disposed over the entire surface of the buried insulating layer between the transistor active regions and the body contact active region, the semiconductor residue layer being thinner than the semiconductor layer;

    a partial trench isolation layer disposed on the semiconductor residue layer;

    an insulated gate pattern crossing over the respective transistor active regions; and

    a bar-shaped full trench isolation layer interposed between the adjacent transistor active regions and running parallel with the gate pattern, the full trench isolation layer being in contact with the buried insulating layer between the adjacent active regions and being in contact with the entire sidewalls of the transistor active regions that are parallel with the gate pattern.

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