Carbon-doped hard mask and method of passivating structures during semiconductor device fabrication

• US 6,576,404 B2
• Filed: 12/19/2000
• Issued: 06/10/2003
• Est. Priority Date: 12/19/2000
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Hu, John, Schoenborn, Philippe, Ley, Ana
• Primary Examiner(s): Huff, Mark F.
• Assistant Examiner(s): MOHAMEDULLA, SALEHA R
• Application Number:
  US09/741,568
• Publication Number:
  US 20020074313A1
• Time in Patent Office: 903 Days
• Field of Search: 430/322, 430/323, 430/324, 430/313, 430/314, 430/316, 430/317, 430/318, 430/5, 216/12, 216/13, 216/17, 216/18, 216/74, 216/75, 216/79, 438/618, 438/622, 438/637, 438/695, 438/696, 438/700, 438/706, 438/725, 438/724, 438/723, 438/734
• US Class Current: 430/317
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: Y10T 428/24322 Composite web or sheet

Abstract

A carbon-doped hard mask includes a dielectric material containing carbon which is released from the hard mask during a metal etching process. The released carbon is deposited on and bonds to sidewalls of the metal structure during the metal etching process to passivate the sidewalls of the metal structure and prevent lateral etching of the sidewalls during the metal etching process. The released carbon also prevents accumulation of metal residue in open fields.

Claims

1. A method of passivating sidewalls of a structure formed under a hard mask from a metal layer substance during an etching process in a semiconductor fabrication process, the method including the steps of:

forming the metal layer substance for the structure from a metal material;

forming the hard mask on the metal layer substance from dielectric material containing carbon;

using the hard mask to etch a pattern into the metal layer substance;

releasing carbon from the dielectric material during the etching process; and

etching the metal layer substance in a vertically downward direction to form the structure while the released carbon bonds to and passivates the sidewalls of the structure to prevent lateral etching thereof.

2. A method as defined in claim 1 further comprising the step of:

preventing metallic residue accumulation in an open field of the structure by the released carbon.

3. A method as defined in claim 1 further including the step of:

forming the hard mask using a photoresist mask in a photolithography process.

4. A method as defined in claim 3 further including the step of:

removing the photoresist mask from the hard mask before etching the metal layer substance.

5. A method as defined in claim 3 further including the step of:

simultaneously removing the photoresist mask and the hard mask after etching the metal layer substance.

6. A method as defined in claim 3 further including the step of:

removing the photoresist mask from the hard mask after etching the metal layer substance.

7. A method as defined in claim 6 further including the step of:

selectively removing portions of the hard mask from the metal layer substance leaving remaining portions of the hard mask on the metal layer substance after etching the metal layer substance; and

using remaining portions of the hard mask in the semiconductor fabrication process to form part of a semiconductor device.

8. A method as defined in claim 1 further including the step of:

forming the hard mask from carbon silicon oxide.

9. A method of inhibiting lateral etching of a structure formed in a semiconductor fabrication process by vertically etching a metal layer substance to form the structure, comprising the steps of:

forming a dielectric material mask on the metal layer substance containing a passivating agent which is released from the dielectric material mask during etching;

etching the metal layer substance to form the structure using the dielectric material mask while the passivating agent is released from the dielectric material mask to passivate sidewalls of the structure to prevent lateral etching of the sidewalls of the structure as the metal layer substance is etched to form the structure.

10. A method as defined in claim 9 further comprising the step of:

forming the dielectric material mask from a dielectric material which contains the passivating agent in sufficient quantities which when released passivate the sidewalls of the structure.

11. A method as defined in claim 10 wherein the passivating agent is carbon.