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Carbon-doped hard mask and method of passivating structures during semiconductor device fabrication

  • US 6,576,404 B2
  • Filed: 12/19/2000
  • Issued: 06/10/2003
  • Est. Priority Date: 12/19/2000
  • Status: Expired due to Term
First Claim
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1. A method of passivating sidewalls of a structure formed under a hard mask from a metal layer substance during an etching process in a semiconductor fabrication process, the method including the steps of:

  • forming the metal layer substance for the structure from a metal material;

    forming the hard mask on the metal layer substance from dielectric material containing carbon;

    using the hard mask to etch a pattern into the metal layer substance;

    releasing carbon from the dielectric material during the etching process; and

    etching the metal layer substance in a vertically downward direction to form the structure while the released carbon bonds to and passivates the sidewalls of the structure to prevent lateral etching thereof.

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