Method of fabricating a liquid crystal display device having an improved storage capacitance

• US 6,576,504 B2
• Filed: 09/21/2001
• Issued: 06/10/2003
• Est. Priority Date: 08/06/1998
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohtani, Hisashi, Nakazawa, Misako
• Primary Examiner(s): Wilczewski, Mary
• Application Number:
  US09/956,946
• Publication Number:
  US 20020013019A1
• Time in Patent Office: 627 Days
• Field of Search: 257/72, 257/376, 438/30, 438/149, 438/234, 438/250, 438/253, 438/393, 438/396, 438/151, 438/152, 438/155
• US Class Current: 438/152
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer

Abstract

In a liquid crystal display device, an improved storage capacitance that uses a pair of transparent conductive films for electrodes is provided. On a flattening film made of a resin, a first transparent conductive film and an insulating film for capacitance are formed into a lamination to form in this laminated film an opening portion An insulating film covering near the opening portion is formed. A transparent conductive film is formed and patterned to form a pixel electrode Thus is formed a storage capacitance having the structure where the insulating film for capacitance is sandwiched between the first transparent conductive film and the pixel electrode.

Claims

1. A method of manufacturing a semiconductor device having:

a plurality of pixel TFTs being arranged in a matrix; and

a storage capacitance being connected to each of the plurality of pixel TFTs, said method comprising the steps of;

forming a first transparent conductive film having a first opening portion;

forming a capacitance insulating film;

patterning said capacitance insulating film to form a second opening portion at the inside deeper than said first opening portion;

forming an interlayer insulating film;

patterning said interlayer insulating film to form a pattern restrictedly over said pixel TFTs; and

forming a second transparent conductive film,

wherein said storage capacitance comprises said first transparent conductive film, said capacitance insulating film and said second transparent conductive film.

2. A method according to claim 1, wherein said interlayer insulating film includes a resin material.

3. A method according to claim 1, wherein said interlayer insulating film contains a resin material having a light shielding property or a lamination of a resin material having a light shielding property and a transparent resin material.

4. A method according to claim 1, wherein said first transparent conductive film is grounded through a pad electrode.

5. A method according to claim 4, wherein the pad electrode includes said second transparent conductive film.

6. A method according to claim 1, wherein said semiconductor device is one selected from the group consisting of a liquid crystal display device, an EL (electroluminescence) display device and an EC (electrochromic) display device.

7. A method according to claim 1, wherein said semiconductor device is one selected from the group consisting of a video camera, a digital camera, a rear type projector, a front type projector, a head mount display (a goggle type display), a vehicle navigation system, a personal computer and a portable information terminal such as a mobile computer, a cellular phone and an electronic book.