Manufacturing method of semiconductor device using mask pattern having high etching resistance

• US 6,576,562 B2
• Filed: 12/14/2001
• Issued: 06/10/2003
• Est. Priority Date: 12/15/2000
• Status: Expired due to Term

• Current Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Onishi, Yasunobu, Shiobara, Eishi, Ohiwa, Tokuhisa, Hayashi, Hisataka, Sato, Yasuhiko, Ohuchi, Junko
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Le, Thao P
• Application Number:
  US10/014,459
• Publication Number:
  US 20020119612A1
• Time in Patent Office: 543 Days
• Field of Search: 438/558, 438/725, 438/704
• US Class Current: 438/725
• CPC Class Codes: H01L 21/0271 comprising organic layers
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material

Abstract

A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.

Claims

1. A manufacturing method of semiconductor device comprising:

forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object;

forming a mask material pattern by etching said mask material to a desired pattern; and

etching said object to transfer said mask material pattern as a mask to said object.

2. A manufacturing method of semiconductor device according to claim 1, wherein forming said mask material pattern includes:

forming an intermediate film having at least any one of semiconductor element and metal element on said mask material;

forming a photo resist film on said intermediate film;

forming a resist pattern by fabricating said photo resist film into a desired pattern;

forming an intermediate film pattern by transferring said resist pattern to said intermediate film; and

transferring said intermediate film pattern to said mask material to form said mask material pattern.

3. A manufacturing method of semiconductor device according to claim 1, wherein the carbon content of said mask material is 90 wt % or more.

4. A manufacturing method of semiconductor device according to claim 1, wherein said mask material is formed by coating with solution.

5. A manufacturing method of semiconductor device according to claim 4, wherein after coating of said solution, the carbon content of said mask material is increased by dehydrogenating reaction or dehydrating condensation.

6. A manufacturing method of semiconductor device according to claim 5, wherein at least any one of said dehydrogenating reaction and said dehydrating condensation is carried out by heating.

7. A manufacturing method of semiconductor device according to claim 4, wherein said solution contains polycyclic aromatic compound.

8. A manufacturing method of semiconductor device according to claim 7, wherein the average molecular weight of said polycyclic aromatic compound is in a range of 1,000 to 100,000.

9. A manufacturing method of semiconductor device comprising:

forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object;

forming a photo resist film on said mask material;

forming a resist pattern by fabricating said photo resist film into a desired pattern;

forming a mask material pattern by transferring said resist pattern to said mask material; and

etching said object to transfer said mask material pattern as a mask to said object.

10. A manufacturing method of semiconductor device according to claim 9, wherein said resist pattern is obtained by a wet development method.

11. A manufacturing method of semiconductor device according to claim 10, wherein said resist pattern contains at least any one of semiconductor element and metal element.

12. A manufacturing method of semiconductor device according to claim 9, further comprising,

silylating said resist pattern after forming said resist pattern.

13. A manufacturing method of semiconductor device according to claim 9, wherein said resist pattern is obtained by a dry development method.

14. A manufacturing method of semiconductor device according to claim 9, wherein said mask material is formed by coating with solution.

15. A manufacturing method of semiconductor device according to claim 14, wherein after coating of said solution, the carbon content of said mask material is increased by dehydrogenating reaction or dehydrating condensation.

16. A manufacturing method of semiconductor device according to claim 15, wherein at least any one of said dehydrogenating reaction and said dehydrating condensation is carried out by heating.

17. A manufacturing method of semiconductor device according to claim 14, wherein said solution contains polycyclic aromatic compound.

18. A manufacturing method of semiconductor device according to claim 17, wherein the average molecular weight of said polycyclic aromatic compound is in a range of 1,000 to 100,000.

19. A manufacturing method of semiconductor device comprising:

forming a first wiring layer above a semiconductor substrate with a first insulating film therebetween;

forming a second insulating film on said first wiring layer and said first insulating film;

forming a first organic base film having an aromatic ring and carbon content of 80 wt % or more on said second insulating film;

forming a first inorganic film pattern containing a first inorganic component having at least any one of semiconductor element and metal element on said first organic base film;

forming a first organic film pattern of said first organic base film by transferring said first inorganic film pattern as a mask to said first organic base film;

forming any one of a hole and a groove in said second insulating film by transferring said first organic film pattern as a mask to said second insulating film;

forming a second organic base film having an aromatic ring and carbon content of 80 wt % or more on said first organic film pattern;

forming a second inorganic film pattern containing a second inorganic component having at least any one of semiconductor element and metal element on said second organic base film;

forming a second organic film pattern of said second organic base film by transferring said second inorganic film pattern as a mask to said second organic base film;

forming any one of a groove and a hole in said second insulating film by transferring said second organic film pattern as a mask to said second insulating film; and

forming a second wiring layer keeping contact with said first wiring layer by embedding a conductive material in said groove and said hole.

20. A manufacturing method of semiconductor device according to claim 19, wherein the carbon content of said first organic base film and said second organic base film are respectively 90 wt % or more.

21. A manufacturing method of semiconductor device according to claim 19, wherein said first and second organic base films are formed by coating with solution.

22. A manufacturing method of semiconductor device according to claim 21, wherein said solution contains polycyclic aromatic compound.

23. A manufacturing method of semiconductor device according to claim 19, wherein said second insulating film is a low-dielectric-constant insulating film.