Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate

• US 6,576,924 B1
• Filed: 02/07/2000
• Issued: 06/10/2003
• Est. Priority Date: 02/12/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Osame, Mitsuaki, Murakami, Satoshi, Ohnuma, Hideto, Koyama, Jun, Yamazaki, Shunpei, Kitakado, Hidehito, Tanaka, Yukio, Fujimoto, Etsuko
• Primary Examiner(s): Tran, Minh Loan
• Assistant Examiner(s): Dickey, Thomas L
• Application Number:
  US09/498,646
• Time in Patent Office: 1,219 Days
• Field of Search: 349/42-44, 257/59, 257/72, 257/339, 257/408
• US Class Current: 257/59
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78624 the source and the drain regions being asymmetrical
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs
• CPC Class Codes: H10K 59/8722 Peripheral sealing arrangements, e.g. adhesives, sealants

Abstract

A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

Claims

1. A semiconductor device having at least a pixel unit and a drive circuit unit over a same substrate, comprising:

a plurality of drive TFTs in said drive circuit unit, each of said plurality of drive TFTs comprising a semiconductor layer, a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; and

a plurality of pixel TFTs in said pixel unit, each of said plurality of pixel TFTs comprising a semiconductor layer, a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,

wherein said gate insulating film of said drive TFTs is thinner than said gate insulating film of said pixel TFTs, and

wherein a concentration distribution of phosphorus in at least one of a source and a drain region of said drive TFTs is different from that of said pixel TFTs along a vertical direction with respect to a surface of said substrate.

3. A semiconductor device according to claim 1 or 2, wherein said semiconductor device is an EL display device.

4. A semiconductor device according to claim 1 or 2, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, and a projector.

2. A semiconductor device having at least a pixel unit and a drive circuit unit over a same substrate, comprising:

a plurality of drive TFTs in said drive circuit unit, each of said plurality of drive TFTs comprising a semiconductor layer, a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; and

a plurality of pixel TFTs in said pixel unit, each of said plurality of pixel TFTs comprising a semiconductor layer, a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween,

wherein at least one of said drive TFTs and one of said pixel TFTs have lightly doped regions in said semiconductor layers of said drive TFTs and said pixel TFTs, respectively,

wherein said lightly doped region of drive TFTs overlaps said gate electrode of said drive TFTs,

wherein said lightly doped region of pixel TFTs does not overlap said gate electrode of said pixel TFTs,

wherein said gate insulating film of said drive TFTs is thinner than said gate insulating film of said pixel TFTs, and

wherein a concentration distribution of phosphorus in at least one of a source and a drain region of said drive TFTs is different from that of said pixel TFTs along a vertical direction with respect to a surface of said substrate.

5. A semiconductor device having at least a pixel unit and a drive circuit unit over a same substrate, comprising:

a plurality of pixel thin film transistors in said pixel unit, each of said plurality of pixel thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region;

a plurality of drive circuit thin film transistors in said drive circuit unit, each of said plurality of drive circuit thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region; and

a light-shielding film formed over said plurality of pixel thin film transistors,

wherein said gate insulating film of said plurality of drive circuit thin film transistors is thinner than said gate insulating film of said plurality of pixel thin film transistors, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

6. A semiconductor device according to claim 5, wherein said light-shielding film comprises aluminum.

7. A semiconductor device according to claim 5, wherein said semiconductor device is an EL display device.

8. A semiconductor device according to claim 5, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, and a projector.

9. A semiconductor device having at least a pixel unit and a drive circuit unit over a same substrate, comprising:

a plurality of pixel thin film transistors in said pixel unit, each of said plurality of pixel thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region;

a plurality of drive circuit thin film transistors in said drive circuit unit, each of said plurality of drive circuit thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region; and

a light-shielding film formed on a resin film,

wherein said gate insulating film of said plurality of drive circuit thin film transistors is thinner than said gate insulating film of said plurality of pixel thin film transistors, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

10. A semiconductor device according to claim 9, wherein said light-shielding film comprises aluminum.

11. A semiconductor device according to claim 9, wherein said semiconductor device is an EL display device.

12. A semiconductor device according to claim 9, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, and a projector.

13. A semiconductor device having at least a pixel unit and a drive circuit unit over a same substrate, comprising:

a plurality of pixel thin film transistors in said pixel unit, each of said plurality of pixel thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region;

a plurality of drive circuit thin film transistors in said drive circuit unit, each of said plurality of drive circuit thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region; and

at least one storage capacitor formed by a light-shielding film formed over said plurality of pixel thin film transistors, an insulating film on said light-shielding film, and a pixel electrode,

wherein said gate insulating film of said plurality of drive circuit thin film transistors is thinner than said gate insulating film of said plurality of pixel thin film transistors, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

14. A semiconductor device according to claim 13, wherein said light-shielding film comprises aluminum.

15. A semiconductor device according to claim 13, wherein said semiconductor device is an EL display device.

16. A semiconductor device according to claim 13, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, and a projector.

17. A semiconductor device having at least a pixel unit and a drive circuit unit over a same substrate, comprising:

a plurality of pixel thin film transistors in said pixel unit, each of said plurality of pixel thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region;

a plurality of drive circuit thin film transistors in said drive circuit unit, each of said plurality of drive circuit thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region; and

at least one storage capacitor formed by a light-shielding film formed on a resin film, an insulating film on said light-shielding film, and a pixel electrode,

wherein said gate insulating film of said plurality of drive circuit thin film transistors is thinner than said gate insulating film of said plurality of pixel thin film transistors, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

18. A semiconductor device according to claim 17, wherein said light-shielding film comprises aluminum.

19. A semiconductor device according to claim 17, wherein said semiconductor device is an EL display device.

20. A semiconductor device according to claim 17, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, and a projector.

21. An active matrix type EL display device comprising:

a plurality of thin film transistors in a pixel unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region;

a plurality of thin film transistors in a drive circuit unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region,

wherein said gate insulating film of said plurality of thin film transistors in said drive circuit unit is thinner than said gate insulating film of said plurality of thin film transistors in said pixel unit, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

22. An active matrix type EL display device according to claim 21, wherein said active matrix type EL display device is incorporated in at least one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, a projector, a mobile computer, an electronic game machine, a player using a recording medium, and a digital camera.

23. An active matrix type EL display device comprising:

a plurality of thin film transistors in a pixel unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region, and wherein said lightly doped region does not overlap said gate electrode;

a plurality of thin film transistors in a drive circuit unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region, and wherein said lightly doped region overlaps said gate electrode,

wherein said gate insulating film of said plurality of thin film transistors in said drive circuit unit is thinner than said gate insulating film of said plurality of thin film transistors in said pixel unit, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

24. An active matrix type EL display device according to claim 23, wherein said active matrix type EL display device is incorporated in at least one selected from the group consisting of a portable telephone, a video camera, a personal computer, a goggle-type display, a projector, a mobile computer, an electronic game machine, a player using a recoding medium, and a digital camera.

25. A mobile computer comprising:

a plurality of thin film transistors in a pixel unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region;

a plurality of thin film transistors in a drive circuit unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region,

wherein said gate insulating film of said plurality of thin film transistors in said drive circuit unit is thinner than said gate insulating film of said plurality of thin film transistors in said pixel unit, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

26. A mobile computer comprising:

a plurality of thin film transistors in a pixel unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region, and wherein said lightly doped region does not overlap said gate electrode;

a plurality of thin film transistors in a drive circuit unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region, and wherein said lightly doped region overlaps said gate electrode,

wherein said gate insulating film of said plurality of thin film transistors in said drive circuit unit is thinner than said gate insulating film of said plurality of thin film transistors in said pixel unit, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

27. An electronic game machine comprising:

a plurality of thin film transistors in a pixel unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region;

a plurality of thin film transistors in a drive circuit unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region,

wherein said gate insulating film of said plurality of thin film transistors in said drive circuit unit is thinner than said gate insulating film of said plurality of thin film transistors in said pixel unit, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

28. An electronic game machine comprising:

a plurality of thin film transistors in a pixel unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region, and wherein said lightly doped region does not overlap said gate electrode;

a plurality of thin film transistors in a drive circuit unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region, and wherein said lightly doped region overlaps said gate electrode,

wherein said gate insulating film of said plurality of thin film transistors in said drive circuit unit is thinner than said gate insulating film of said plurality of thin film transistors in said pixel unit, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

29. A player using a recording medium machine comprising:

a plurality of thin film transistors in a pixel unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region;

a plurality of thin film transistors in a drive circuit unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region,

wherein said gate insulating film of said plurality of thin film transistors in said drive circuit unit is thinner than said gate insulating film of said plurality of thin film transistors in said pixel unit, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

30. A player using a recording medium comprising:

a plurality of thin film transistors in a pixel unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region, and wherein said lightly doped region does not overlap said gate electrode;

a plurality of thin film transistors in a drive circuit unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region, and wherein said lightly doped region overlaps said gate electrode,

wherein said gate insulating film of said plurality of thin film transistors in said drive circuit unit is thinner than said gate insulating film of said plurality of thin film transistors in said pixel unit, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

31. A digital camera comprising:

a plurality of thin film transistors in a pixel unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region;

a plurality of thin film transistors in a drive circuit unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region,

wherein said gate insulating film of said plurality of thin film transistors in said drive circuit unit is thinner than said gate insulating film of said plurality of thin film transistors in said pixel unit, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.

32. A digital camera comprising:

a plurality of thin film transistors in a pixel unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region, and wherein said lightly doped region does not overlap said gate electrode;

a plurality of thin film transistors in a drive circuit unit, each of said plurality of thin film transistors comprising a semiconductor layer, a gate electrode, and a gate insulating film interposed therebetween, wherein said semiconductor layer comprises a source region, a drain region, a channel-forming region, and a lightly doped region between said channel-forming region and at least one of said source region and said drain region, and wherein said lightly doped region overlaps said gate electrode,

wherein said gate insulating film of said plurality of thin film transistors in said drive circuit unit is thinner than said gate insulating film of said plurality of thin film transistors in said pixel unit, and

wherein a concentration distribution of phosphorus in at least one of said source and said drain region of said drive circuit thin film transistors is different from that of said pixel thin film transistors along a vertical direction with respect to a surface of said substrate.