Semiconductor device and fabrication method thereof

• US 6,576,926 B1
• Filed: 02/22/2000
• Issued: 06/10/2003
• Est. Priority Date: 02/23/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Murakami, Satoshi, Ohnuma, Hideto, Koyama, Jun, Yamazaki, Shunpei, Kitakado, Hidehito, Tanaka, Yukio
• Primary Examiner(s): Tran, Minh Loan
• Assistant Examiner(s): Dickey, Thomas L
• Application Number:
  US09/510,734
• Time in Patent Office: 1,204 Days
• Field of Search: 257/59, 257/66, 257/72, 257/336, 257/347, 257/350, 257/408-412, 349/38-44
• US Class Current: 257/66
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/123 pixel
• CPC Class Codes: G02F 2202/104 poly-Si
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 : Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/126 : Shielding, e.g. light-blocking means over the TFTs
• CPC Class Codes: H10K 59/131 : Interconnections, e.g. wiring lines or terminals

Abstract

This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

Claims

1. A semiconductor device including a pixel unit and a driving circuit which are formed over a substrate, wherein:

a first LDD region of an n-channel TFT forming said driving circuit is formed in such a fashion that the whole part of said first LDD region overlaps with a gate wiring of said n-channel TFT while sandwiching a gate insulation film between them; and

a second LDD region of a pixel TFT forming said pixel unit is formed in such a fashion that said second LDD region does not overlap with a gate wiring of said pixel TFT while sandwiching a gate insulation film between them.

5. A semiconductor device according to claim 1 or 2, wherein each of said first and second LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in said first LDD region is higher than in said second LDD region.

7. A semiconductor device according to claim 1 or 2, wherein each of said first and second LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in said first LDD region is by 2 to 10 times higher than in said second LDD region.

12. A semiconductor device according to any of claims 1 through 4, wherein said semiconductor device is incorporated into a display device selected from the group consisting of a liquid crystal display device and an electroluminescence display device.

13. A semiconductor device according to claim 12, wherein said display device is incorporated into an electric appliance selected from the group consisting of a cellular phone, a video camera, a mobile computer, a goggle type display device, a rear projector, a front projector, a personal computer, a electronic game machine, an image reproduction apparatus, and a digital camera.

2. A semiconductor device including a pixel unit and a driving circuit which are formed over a substrate, wherein:

a first LDD region of an n-channel TFT forming said driving circuit is formed in such a fashion that the whole part of said first LDD region overlaps with a gate wiring of said n-channel TFT while sandwiching a gate insulation film between them;

a second LDD region of a pixel TFT forming said pixel unit is formed in such a fashion that said second LDD region does not overlap with a gate wiring of said pixel TFT while sandwiching a gate insulation film between them; and

a capacitor formed in said pixel unit, said capacitor comprising a shading film disposed on a resin film, an oxide of said shading film, and a pixel electrode disposed on said oxide.

10. A semiconductor device according to claim 2 or 4, wherein said shading film is formed of an aluminum film or a film consisting essentially of aluminum as the principal component.

11. A semiconductor device according to claim 2 or 4, wherein said oxide is a film comprising an aluminum oxide.

3. A semiconductor device including a pixel unit and a driving circuit which are formed over a substrate, wherein:

said driving circuit includes a first n-channel TFT formed in such a fashion that the whole part of at least one first LDD region overlaps with a first gate wiring while sandwiching a first gate insulation film between them and a second n-channel TFT formed in such a fashion that a part of at least one second LDD region overlaps with a second gate wiring while sandwiching a second gate insulation film between them; and

said pixel unit includes a pixel TFT formed in such a fashion that at least one third LDD region does not overlap with a third gate wiring while sandwiching a third gate insulation film between them.

6. A semiconductor device according to claim 3 or 4, wherein each of said first, second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.

8. A semiconductor device according to claim 3 or 4, wherein each of said first, second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher by 2 to 10 times than in said third LDD region.

9. A semiconductor device according to claim 3 or 4, wherein said at least one first LDD region is formed between a channel formation region and a drain region, and said at least one second LDD region is so formed as to sandwich a channel formation region.

4. A semiconductor device including a pixel unit and a driving circuit which are formed over a substrate, wherein:

said driving circuit includes a first n-channel TFT formed in such a fashion that the whole part of at least one first LDD region overlaps with a first gate wiring while sandwiching a first gate insulation film between them and a second n-channel TFT formed in such a fashion that a part of at least one second LDD region overlaps with a second gate wiring while sandwiching a second gate insulation film between them;

said pixel unit includes a pixel TFT formed in such a fashion that at least one third LDD region does not overlap with a third gate wiring while sandwiching a third gate insulation film between them; and

a capacitor formed in said pixel unit, said capacitor comprising a shading film disposed on a resin film, an oxide of said shading film, and a pixel electrode disposed on said oxide.

14. A semiconductor device comprising:

a pixel portion and a driving portion formed over a substrate;

said driving portion comprising;

a first thin film transistor formed over said substrate, said first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to said first semiconductor layer with a first gate insulating film interposed therebetween;

wherein said first semiconductor layer includes first source and drain regions, a first channel region, and at least one first LDD region between said first channel region and said first source or drain region;

wherein a whole part of said first LDD region overlaps with said first gate electrode with said first gate insulating film interposed therebetween, and

said pixel portion comprising;

a second thin film transistor formed over said substrate, said second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to said second semiconductor layer with a second gate insulating film interposed therebetween;

wherein said second semiconductor layer includes second source and drain regions, a second channel region, and at least one second LDD region between said second channel region and said second source or drain region;

wherein said second LDD region does not overlap with said second gate electrode with said second gate insulating film interposed therebetween.

15. A semiconductor device according to claim 14, wherein each of said first and second LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in said first LDD region is higher than in said second LDD region.

16. A semiconductor device according to claim 14, wherein said semiconductor device is incorporated into a display device selected from the group consisting of a liquid crystal display device and an electroluminescence display device.

17. A semiconductor device according to claim 16, wherein said display device is incorporated into an electric appliance selected from the group consisting of a cellular phone, a video camera, a mobile computer, a goggle type display device, a rear projector, a front projector, a personal computer, a electronic game machine, an image reproduction apparatus, and a digital camera.

18. A semiconductor device comprising:

a pixel portion and a driving portion formed over a substrate;

said driving portion comprising;

a first thin film transistor formed over said substrate, said first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to said first semiconductor layer with a first gate insulating film interposed therebetween;

a second thin film transistor formed over said substrate, said second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to said second semiconductor layer with a second gate insulating film interposed therebetween;

wherein said first semiconductor layer includes first source and drain regions, a first channel region, and at least one first LDD region between said first channel region and said first source or drain region;

wherein said second semiconductor layer includes second source and drain regions, a second channel region, and at least one second LDD region between said second channel region and said second source or drain region;

wherein a whole part of said first LDD region overlaps with said first gate electrode with said first gate insulating film interposed therebetween,

wherein a part of said second LDD region overlaps with said second gate electrode with said second gate insulating film interposed therebetween, and

said pixel portion comprising;

a third thin film transistor formed over said substrate, said third thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to said third semiconductor layer with a third gate insulating film interposed therebetween;

wherein said third semiconductor layer includes third source and drain regions, a third channel region, and at least one third LDD region between said third channel region and said third source or drain region;

wherein said third LDD region does not overlap with said third gate electrode with said second gate insulating film interposed therebetween.

19. A semiconductor device according to claim 18, wherein each of said first, second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.

20. A semiconductor device according to claim 18, wherein said semiconductor device is incorporated into a display device selected from the group consisting of a liquid crystal display device and an electroluminescence display device.

21. A semiconductor device according to claim 20, wherein said display device is incorporated into an electric appliance selected from the group consisting of a cellular phone, a video camera, a mobile computer, a goggle type display device, a rear projector, a front projector, a personal computer, a electronic game machine, an image reproduction apparatus, and a digital camera.

22. A phone comprising:

a pixel portion and a driving portion formed over a substrate;

said driving portion comprising;

a first n-channel thin film transistor formed over said substrate, said first n-channel thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to said first semiconductor layer with a first gate insulating film interposed therebetween;

a second n-channel thin film transistor formed over said substrate, said second n-channel thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to said second semiconductor layer with a second gate insulating film interposed therebetween;

wherein said first semiconductor layer includes first source and drain regions, a first channel region, and at least one first LDD region between said first channel region and said first source or drain region;

wherein said second semiconductor layer includes second source and drain regions, a second channel region, and at least one second LDD region between said second channel region and said second source or drain region;

wherein a whole part of said first LDD region overlaps with said first gate electrode with said first gate insulating film interposed therebetween,

wherein a part of said second LDD region overlaps with said second gate electrode with said second gate insulating film interposed therebetween, and

said pixel portion comprising;

a pixel thin film transistor formed over said substrate, said pixel thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to said third semiconductor layer with a third gate insulating film interposed therebetween;

wherein said third semiconductor layer includes third source and drain regions, a third channel region, and at least one third LDD region between said third channel region and said third source or drain region;

wherein said third LDD region does not overlap with said third gate electrode with said second gate insulating film interposed therebetween.

23. A cellular phone according to claim 22, wherein each of said first, second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.

24. A phone according to claim 22 wherein said phone is a cellular phone.

25. A camera comprising:

a pixel portion and a driving portion formed over a substrate;

said driving portion comprising;

a first n-channel thin film transistor formed over said substrate, said first n-channel thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to said first semiconductor layer with a first gate insulating film interposed therebetween;

a second n-channel thin film transistor formed over said substrate, said second n-channel thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to said second semiconductor layer with a second gate insulating film interposed therebetween;

wherein said first semiconductor layer includes first source and drain regions, a first channel region, and at least one first LDD region between said first channel region and said first source or drain region;

wherein said second semiconductor layer includes second source and drain regions, a second channel region, and at least one second LDD region between said second channel region and said second source or drain region;

wherein a whole part of said first LDD region overlaps with said first gate electrode with said first gate insulating film interposed therebetween,

wherein a part of said second LDD region overlaps with said second gate electrode with said second gate insulating film interposed therebetween, and

said pixel portion comprising;

a pixel thin film transistor formed over said substrate, said pixel thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to said third semiconductor layer with a third gate insulating film interposed therebetween;

wherein said third semiconductor layer includes third source and drain regions, a third channel region, and at least one third LDD region between said third channel region and said third source or drain region;

wherein said third LDD region does not overlap with said third gate electrode with said second gate insulating film interposed therebetween.

26. A video camera according to claim 25, wherein each of said first, second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.

27. A camera according to claim 25 wherein said camera is a video camera.

28. A digital camera comprising:

a pixel portion and a driving portion formed over a substrate;

said driving portion comprising;

a first n-channel thin film transistor formed over said substrate, said first n-channel thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to said first semiconductor layer with a first gate insulating film interposed therebetween;

a second n-channel thin film transistor formed over said substrate, said second n-channel thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to said second semiconductor layer with a second gate insulating film interposed therebetween;

wherein said first semiconductor layer includes first source and drain regions, a first channel region, and at least one first LDD region between said first channel region and said first source or drain region;

wherein said second semiconductor layer includes second source and drain regions, a second channel region, and at least one second LDD region between said second channel region and said second source or drain region;

wherein a whole part of said first LDD region overlaps with said first gate electrode with said first gate insulating film interposed therebetween,

wherein a part of said second LDD region overlaps with said second gate electrode with said second gate insulating film interposed therebetween, and

said pixel portion comprising;

a pixel thin film transistor formed over said substrate, said pixel thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to said third semiconductor layer with a third gate insulating film interposed therebetween;

wherein said third semiconductor layer includes third source and drain regions, a third channel region, and at least one third LDD region between said third channel region and said third source or drain region;

wherein said third LDD region does not overlap with said third gate electrode with said second gate insulating film interposed therebetween.

29. A digital camera according to claim 28, wherein each of said first, second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.

30. A computer comprising:

a pixel portion and a driving portion formed over a substrate;

said driving portion comprising;

a first n-channel thin film transistor formed over said substrate, said first n-channel thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to said first semiconductor layer with a first gate insulating film interposed therebetween;

a second n-channel thin film transistor formed over said substrate, said second n-channel thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to said second semiconductor layer with a second gate insulating film interposed therebetween;

wherein said first semiconductor layer includes first source and drain regions, a first channel region, and at least one first LDD region between said first channel region and said first source or drain region;

wherein said second semiconductor layer includes second source and drain regions, a second channel region, and at least one second LDD region between said second channel region and said second source or drain region;

wherein a whole part of said first LDD region overlaps with said first gate electrode with said first gate insulating film interposed therebetween,

wherein a part of said second LDD region overlaps with said second gate electrode with said second gate insulating film interposed therebetween, and

said pixel portion comprising;

a pixel thin film transistor formed over said substrate, said pixel thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to said third semiconductor layer with a third gate insulating film interposed therebetween;

wherein said third semiconductor layer includes third source and drain regions, a third channel region, and at least one third LDD region between said third channel region and said third source or drain region;

wherein said third LDD region does not overlap with said third gate electrode with said second gate insulating film interposed therebetween.

31. A computer according to claim 30, wherein each of said first, second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.

32. A projector comprising:

a pixel portion and a driving portion formed over a substrate;

said driving portion comprising;

a first n-channel thin film transistor formed over said substrate, said first n-channel thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to said first semiconductor layer with a first gate insulating film interposed therebetween;

a second n-channel thin film transistor formed over said substrate, said second n-channel thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to said second semiconductor layer with a second gate insulating film interposed therebetween;

wherein said first semiconductor layer includes first source and drain regions, a first channel region, and at least one first LDD region between said first channel region and said first source or drain region;

wherein said second semiconductor layer includes second source and drain regions, a second channel region, and at least one second LDD region between said second channel region and said second source or drain region;

wherein a whole part of said first LDD region overlaps with said first gate electrode with said first gate insulating film interposed therebetween,

wherein a part of said second LDD region overlaps with said second gate electrode with said second gate insulating film interposed therebetween, and

said pixel portion comprising;

a pixel thin film transistor formed over said substrate, said pixel thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to said third semiconductor layer with a third gate insulating film interposed therebetween;

wherein said third semiconductor layer includes third source and drain regions, a third channel region, and at least one third LDD region between said third channel region and said third source or drain region;

wherein said third LDD region does not overlap with said third gate electrode with said second gate insulating film interposed therebetween.

33. A projector according to claim 32, wherein each of said first, second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.

34. A semiconductor device comprising:

a pixel portion and a driving portion formed over a substrate;

said driving portion comprising;

a first thin film transistor formed over said substrate, said first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to said first semiconductor layer with a first gate insulating film interposed therebetween;

wherein said first semiconductor layer includes first source and drain regions, a first channel region between said first source and drain regions, and a first LDD region between said first channel region and said first drain region, said source region is in contact with said channel region;

wherein a whole part of said first LDD region overlaps with said first gate electrode with said first gate insulating film interposed therebetween, and

said pixel portion comprising;

a second thin film transistor formed over said substrate, said second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to said second semiconductor layer with a second gate insulating film interposed therebetween;

wherein said second semiconductor layer includes second source and drain regions, a second channel region, and at least one second LDD region between said second channel region and said second source or drain region;

wherein said second LDD region does not overlap with said second gate electrode with said second gate insulating film interposed therebetween.

35. A semiconductor device according to claim 34, wherein at least one of said first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on said first layer.

36. An electronic appliance comprising said semiconductor device according to claim 34, therein said electronic appliance is selected from the group consisting of a cellular phone, a video camera, a mobile computer, a goggle type display device, a rear projector, a front projector, a personal computer, a electronic game machine, an image reproduction apparatus, and a digital camera.

37. A semiconductor device comprising:

a pixel portion and a driving portion formed over a substrate;

said driving portion comprising;

a first thin film transistor formed over said substrate, said first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to said first semiconductor layer with a first gate insulating film interposed therebetween;

wherein said first semiconductor layer includes first source and drain regions, a first channel region, and at least one first LDD region between said first channel region and said first source or drain region;

wherein a whole part of said first LDD region overlaps with said first gate electrode with said first gate insulating film interposed therebetween, and

said pixel portion comprising;

a second thin film transistor formed over said substrate, said second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to said second semiconductor layer with a second gate insulating film interposed therebetween;

wherein said second semiconductor layer includes second source and drain regions, a second channel region, and at least one second LDD region between said second channel region and said second source or drain region;

wherein said second LDD region does not overlap with said second gate electrode with said second gate insulating film interposed therebetween,

a first insulating film comprising silicon nitride over said first and second thin film transistors;

a second insulating film over said first insulating film;

a third insulating film comprising resin over said second insulating film;

a pixel electrode over said third insulating film, said pixel electrode electrically connected to said second thin film transistor.

38. A semiconductor device according to claim 37, wherein at least one of said first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on said first layer.

39. An electronic appliance comprising said semiconductor device according to claim 37, therein said electronic appliance is selected from the group consisting of a cellular phone, a video camera, a mobile computer, a goggle type display device, a rear projector, a front projector, a personal computer, a electronic game machine, an image reproduction apparatus, and a digital camera.

40. A semiconductor device comprising:

a pixel portion and a driving portion formed over a substrate;

said driving portion comprising;

a first thin film transistor formed over said substrate, said first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to said first semiconductor layer with a first gate insulating film interposed therebetween;

wherein said first semiconductor layer includes first source and drain regions, a first channel region, and at least one first LDD region between said first channel region and said first source or drain region;

wherein a whole part of said first LDD region overlaps with said first gate electrode with said first gate insulating film interposed therebetween, and

said pixel portion comprising;

a second thin film transistor formed over said substrate, said second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to said second semiconductor layer with a second gate insulating film interposed therebetween;

wherein said second semiconductor layer includes second source and drain regions, a second channel region, and at least one second LDD region between said second channel region and said second source or drain region;

wherein said second LDD region does not overlap with said second gate electrode with said second gate insulating film interposed therebetween.

a first insulating film comprising silicon nitride over said first and second thin film transistors;

a second insulating film over said first insulating film;

a wiring over said second insulating film, said wiring connected to said second thin film transistor;

a third insulating film over said wiring and said second insulating film;

a fourth insulating film comprising resin over said wiring and said third insulating film; and

a pixel electrode over said third insulating film, said pixel electrode connected to said wiring.

41. A semiconductor device according to claim 40, wherein at least one of said first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on said first layer.

42. A semiconductor device according to claim 40, wherein said wiring comprises titanium and aluminum.

43. An electronic appliance comprising said semiconductor device according to claim 40, therein said electronic appliance is selected from the group consisting of a cellular phone, a video camera, a mobile computer, a goggle type display device, a rear projector, a front projector, a personal computer, a electronic game machine, an image reproduction apparatus, and a digital camera.