Electronic device having liquid crystal display device

• US 6,577,372 B2
• Filed: 05/09/2002
• Issued: 06/10/2003
• Est. Priority Date: 06/25/1996
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hirakata, Yoshiharu, Teramoto, Satoshi, Yamazaki, Shunpei, Zhang, Hongyong
• Primary Examiner(s): Ngo, Huyen Le
• Application Number:
  US10/143,331
• Publication Number:
  US 20020126234A1
• Time in Patent Office: 397 Days
• Field of Search: 349/43, 349/52, 349/151, 349/152
• US Class Current: 349/152
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1345 Conductors connecting electrodes to cell terminals
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136277 formed on a semiconductor substrate, e.g. of silicon
• CPC Class Codes: G09G 2320/0252 Improving the response speed
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence

Abstract

An electronic device having an active matrix liquid crystal device comprising a sealing layer with a region overlapping an insulating film formed over another insulating film, which extends beyond said insulating film and forms on a peripheral switching device, a region in contact with said another insulating film, and a region where said second insulating film is not formed over said another insulating film.

Claims

1. An electronic device comprising:

a first thin film transistor in a pixel region, and a second thin film transistor in a driving circuit, each of the first and the second thin film transistors comprising a semiconductor layer over a substrate, a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween;

a first insulating film over the first and the second thin film transistors;

a second insulating film comprising a resin material over the first insulating film; and

a wiring line electrically connected to the semiconductor layer of the second thin film transistor,

wherein the wiring line extends on the second insulating film and on the first insulating film.

2. An electronic device according to claim 1 wherein the semiconductor layer comprises crystalline silicon.

3. An electronic device according to claim 1 wherein the resin material comprises polyimide.

4. An electronic device according to claim 1 wherein the substrate comprises a glass substrate.

5. An electronic device according to claim 1 wherein the electronic device is at least one selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.

6. An electronic device comprising:

a first thin film transistor in a pixel region, and a second thin film transistor in a driving circuit, each of the first and the second thin film transistors comprising a semiconductor layer over a substrate, a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween;

a first insulating film over the first and the second thin film transistors;

a second insulating film comprising a resin material over the first insulating film, wherein the first insulating film extends beyond the second insulating film; and

a wiring line electrically connected to the semiconductor layer of the second thin film transistor,

wherein the wiring line extends on the second insulating film and on the first insulating film.

7. An electronic device according to claim 6 wherein the semiconductor layer comprises crystalline silicon.

8. An electronic device according to claim 6 wherein the resin material comprises polyimide.

9. An electronic device according to claim 6 wherein the substrate comprises a glass substrate.

10. An electronic device according to claim 6 wherein the electronic device is at least one selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.

11. An electronic device comprising:

a first thin film transistor in a pixel region, and a second thin film transistor in a driving circuit, each of the first and the second thin film transistors comprising a semiconductor layer over a substrate, a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween;

a first insulating film comprising silicon nitride over the first and the second thin film transistors;

a second insulating film comprising a resin material over the first insulating film; and

a wiring line electrically connected to the semiconductor layer of the second thin film transistor,

wherein the wiring line extends on the second insulating film and on the first insulating film.

12. An electronic device according to claim 11 wherein the semiconductor layer comprises crystalline silicon.

13. An electronic device according to claim 11 wherein the resin material comprises polyimide.

14. An electronic device according to claim 11 wherein the substrate comprises a glass substrate.

15. An electronic device according to claim 11 wherein the electronic device is at least one selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.

16. An electronic device comprising:

a first thin film transistor in a pixel region, and a second thin film transistor in a driving circuit, each of the first and the second thin film transistors comprising a semiconductor layer over a substrate, a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween;

a first insulating film over the first and the second thin film transistors;

a second insulating film comprising a resin material over the first insulating film; and

a wiring line electrically connected to the semiconductor layer of the second thin film transistor,

wherein the wiring line extends on the second insulating film and on the first insulating film, and

wherein the wiring line constitutes an external terminal.

17. An electronic device according to claim 16 wherein the semiconductor layer comprises crystalline silicon.

18. An electronic device according to claim 16 wherein the resin material comprises polyimide.

19. An electronic device according to claim 16 wherein the substrate comprises a glass substrate.

20. An electronic device according to claim 16 wherein the electronic device is at least one selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.

21. An electronic device comprising:

a first thin film transistor in a pixel region, and a second thin film transistor in a driving circuit, each of the first and the second thin film transistors comprising a semiconductor layer over a substrate, a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween;

a first insulating film comprising silicon nitride over the first and the second thin film transistors;

a second insulating film comprising a resin material over the first insulating film, wherein the first insulating film extends beyond the second insulating film; and

a wiring line electrically connected to the semiconductor layer of the second thin film transistor,

wherein the wiring line extends on the second insulating film and on the first insulating film.

22. An electronic device according to claim 21 wherein the semiconductor layer comprises crystalline silicon.

23. An electronic device according to claim 21 wherein the resin material comprises polyimide.

24. An electronic device according to claim 21 wherein the substrate comprises a glass substrate.

25. An electronic device according to claim 21 wherein the electronic device is at least one selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.

26. An electronic device comprising:

a first thin film transistor in a pixel region, and a second thin film transistor in a driving circuit, each of the first and the second thin film transistors comprising a semiconductor layer over a substrate, a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween;

a first insulating film over the first and the second thin film transistors;

a second insulating film comprising a resin material over the first insulating film, wherein the first insulating film extends beyond the second insulating film; and

a wiring line electrically connected to the semiconductor layer of the second thin film transistor,

wherein the wiring line extends on the second insulating film and on the first insulating film, and

wherein the wiring line constitutes an external terminal.

27. An electronic device according to claim 26 wherein the semiconductor layer comprises crystalline silicon.

28. An electronic device according to claim 26 wherein the resin material comprises polyimide.

29. An electronic device according to claim 26 wherein the substrate comprises a glass substrate.

30. An electronic device according to claim 26 wherein the electronic device is at least one selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.

31. An electronic device comprising:

a first thin film transistor in a pixel region, and a second thin film transistor in a driving circuit, each of the first and the second thin film transistors comprising a semiconductor layer over a substrate, a gate electrode adjacent to the semiconductor layer with a gate insulating film interposed therebetween;

a first insulating film comprising silicon nitride over the first and the second thin film transistors;

a second insulating film comprising a resin material over the first insulating film; and

a wiring line electrically connected to the semiconductor layer of the second thin film transistor,

wherein the wiring line extends on the second insulating film and on the first insulating film, and

wherein the wiring line constitute an external terminal.

32. An electronic device according to claim 31 wherein the semiconductor layer comprises crystalline silicon.

33. An electronic device according to claim 31 wherein the resin material comprises polyimide.

34. An electronic device according to claim 31 wherein the substrate comprises a glass substrate.

35. An electronic device according to claim 31 wherein the electronic device is at least one selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation system, a portable telephone, a video camera, and a projector.