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Write current compensation for temperature variations in memory arrays

  • US 6,577,549 B1
  • Filed: 09/25/2002
  • Issued: 06/10/2003
  • Est. Priority Date: 12/03/2001
  • Status: Expired due to Term
First Claim
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1. A method of generating a write current in a memory device, the memory device comprising an array of memory cells, a plurality of first conductors coupled to the memory cells, a plurality of second conductors coupled to the memory cells, and at least one current source having at least one temperature sensor, the method comprising:

  • enabling a write current to flow to one of the first conductors;

    receiving an output from the temperature sensor in the current source; and

    generating the write current using the output from the temperature sensor.

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