Compound semiconductor optical waveguide switch

• US 6,577,785 B1
• Filed: 08/09/2001
• Issued: 06/10/2003
• Est. Priority Date: 08/09/2001
• Status: Active Grant

• Current Assignee: National Technology & Engineering Solutions Of Sandia LLC (Honeywell International Inc.)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Spahn, Olga B., Garcia, Ernest J., Sullivan, Charles T.
• Primary Examiner(s): Zarroli; Michael C.
• Application Number:
  US09/928,199
• Time in Patent Office: 670 Days
• Field of Search: 385/22,15,16
• US Class Current: 385/22
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/3504 Rotating, tilting or pivoting the waveguides, or with the waveguides describing a curved path rotary joint G02B6/3628
• CPC Class Codes: G02B 6/3546 NxM switch, i.e. a regular array of switches elements of matrix type constellation
• CPC Class Codes: G02B 6/355 1x2 switch, i.e. one input and a selectable single output of two possible outputs
• CPC Class Codes: G02B 6/357 Electrostatic force electrostatic forces controlling reflecting elements in general G02B26/0841
• CPC Class Codes: G02B 6/358 Latching of the moving element, i.e. maintaining or holding the moving element in place once operation has been performed; includes a mechanically bistable system
• CPC Class Codes: G02B 6/3596 With planar waveguide arrangement, i.e. in a substrate, regardless if actuating mechanism is outside the substrate

Abstract

An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

Claims

1. An optical waveguide switch, comprising:

(a) a moveable optical waveguide formed from a plurality of III-V compound semiconductor layers epitaxially deposited on a substrate, with the moveable optical waveguide having a portion thereof cantilevered above the substrate, and with an end of the cantilevered portion being moveable in the plane of the substrate; and

(b) an electrostatic actuator operatively coupled to the moveable optical waveguide to move the end of the cantilevered portion in the plane of the substrate and into optical alignment with one of a plurality of fixed optical waveguides formed on the substrate from the same plurality of epitaxially-deposited compound semiconductor layers.

2. The optical waveguide switch of claim 1 wherein the plurality of epitaxially-deposited III-V compound semiconductor layers comprises a high-refractive-index compound semiconductor layer sandwiched between a pair of lower-refractive-index compound semiconductor layers.

3. The optical waveguide switch of claim 2 wherein the high-refractive-index III-V compound semiconductor layer is selected from the group consisting of gallium arsenide (GaAs), gallium arsenide antimonide (GaAsSb) and indium gallium arsenide (InGaAs), and the lower-refractive-index III-V compound semiconductor layers are selected from the group consisting of aluminum gallium arsenide (AlGaAs), aluminum arsenide antimonide (AlAsSb) and indium aluminum arsenide (InAlAs).

4. The optical waveguide switch of claim 3 wherein the substrate comprises gallium arsenide (GaAs) or indium phosphide (InP).

5. The optical waveguide switch of claim 1 wherein the electrostatic actuator comprises at least one pair of meshed electrostatic combs, with each pair of the meshed electrostatic combs further comprising a fixed electrostatic comb supported on the substrate, and a moveable electrostatic comb attached to the cantilevered portion of the moveable optical waveguide.

6. The optical waveguide switch of claim 1 further comprising a plurality of stops formed on the substrate to limit motion of the cantilevered portion of the moveable optical waveguide.

7. The optical waveguide switch of claim 1 further comprising an anti-reflection coating formed on the end of the cantilevered portion of the moveable optical waveguide.

8. The optical waveguide switch of claim 7 further comprising an antireflection coating formed on an end of each of the plurality of fixed optical waveguides proximate to the end of the cantilevered portion of the moveable optical waveguide.

9. An optical waveguide switching network formed on a substrate, and comprising a plurality of interconnected optical waveguide switches according to claim 1.

10. An optical waveguide switch, comprising:

(a) a III-V compound semiconductor substrate;

(b) a pair of fixed optical waveguides formed on the substrate from a plurality of III-V compound semiconductor layers including a pair of cladding layers sandwiched about a core layer; and

(c) a moveable optical waveguide formed on the substrate from the plurality of III-V compound semiconductor layers, with the moveable optical waveguide having a cantilevered end thereof which is electrostatically moveable into alignment with one or the other of the pair of fixed optical waveguides.

11. The optical waveguide switch of claim 10 wherein the cantilevered end of the moveable optical waveguide includes an antireflection coating formed thereon.

12. The optical waveguide switch of claim 10 wherein the core layer comprises gallium arsenide (GaAs) and the cladding layers comprise aluminum gallium arsenide (AlGaAs).

13. The optical waveguide switch of claim 12 wherein the III-V compound semiconductor substrate comprises gallium arsenide (GaAs).

14. The optical waveguide switch of claim 10 wherein the core layer comprises gallium arsenide antimonide (GaAsSb) and the cladding layers comprise aluminum arsenide antimonide (AlAsSb).

15. The optical waveguide switch of claim 14 wherein the III-V compound semiconductor substrate comprises indium phosphide (InP).

16. The optical waveguide switch of claim 10 wherein the core layer comprises indium gallium arsenide (InGaAs), and the cladding layers comprise indium aluminum arsenide (InAlAs).

17. The optical waveguide switch of claim 16 wherein the III-V compound semiconductor substrate comprises indium phosphide (InP).

18. The optical waveguide switch of claim 10 further including an electrostatic actuator operatively coupled to electrostatically move the cantilevered end of the moveable optical waveguide into alignment with one of the pair of the fixed optical waveguides.

19. The optical waveguide switch of claim 18 wherein the electrostatic actuator comprises at least one pair of meshed electrostatic combs, with each pair of the meshed electrostatic combs further comprising a fixed electrostatic comb supported on the substrate, and a moveable electrostatic comb attached to the cantilevered end of the moveable optical waveguide.

20. An optical waveguide switching network formed on a substrate, and comprising a plurality of interconnected optical waveguide switches according to claim 10.

21. A method for forming an optical waveguide switch, comprising steps for:

(a) epitaxially depositing a plurality of III-V compound semiconductor layers on a substrate including, in order of epitaxial growth, a layer of a sacrificial material, a lower cladding layer, a waveguide core layer, an upper cladding layer, and a cap layer;

(b) depositing a contact metallization on the substrate over portions of the cap layer wherein electrical connections to the optical waveguide switch are to be made;

(c) anisotropically etching down through the plurality of III-V compound semiconductor layers for exposing portions of the sacrificial material, and for defining shapes for a moveable optical waveguide, a plurality of fixed optical waveguides and an electrostatic actuator; and

(d) forming a cantilevered portion of the moveable optical waveguide by selectively etching away the exposed portions of the sacrificial material using a selective wet etchant.