Semiconductor device and method of manufacturing thereof

• US 6,579,736 B2
• Filed: 04/17/2002
• Issued: 06/17/2003
• Est. Priority Date: 03/26/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): TRAN, MAI HUONG C
• Application Number:
  US10/123,198
• Publication Number:
  US 20020109185A1
• Time in Patent Office: 426 Days
• Field of Search: 257/59, 257/72, 257/296, 257/344, 257/350, 257/392, 257/408
• US Class Current: 438/22
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 2029/7863 with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
• CPC Class Codes: H01L 21/02107 Forming insulating materials on a substrate
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

By appropriately selecting the structure of top gate type or staggered type TFTs disposed in the respective circuits of a semiconductor device depending on the function of the circuits, the operating characteristics and the reliability of the semiconductor device is improved. An LDD region (107) the whole of which overlaps a gate electrode is provided in a first n-channel type TFT of a controlling circuit. LDD regions (111) and (112) at least part of which overlaps a gate electrode are provided in a second n-channel type TFT of the control circuit. LDD regions (117) to (120) which do not overlap a gate electrode through offset regions are provided in an n-channel type TFT of a pixel matrix circuit. By making different the concentration of LDD regions of the control circuit and the concentration of the pixel matrix circuit, optimized circuit operation is obtained.

Claims

1. A method of manufacturing a semiconductor device comprising a pixel portion and a driver circuit for driving said pixel portion formed over a same substrate, said method comprising:

selectively doping an n-type impurity element at a concentration from 2×

10¹⁶ to 5×

10¹⁹ atoms/cm³ in semiconductor layers of first and second n-channel type thin film transistors of said driver circuit;

selectively doping a p-type impurity element at a concentration from 3×

10²⁰ to 3×

10²¹ atoms/cm³ in a semiconductor layer of a p-channel type thin film transistor of said driver circuit;

selectively doping an n-type impurity element at a concentration from 1×

10²⁰ to 1×

10²¹ atoms/cm³ in said semiconductor layers of said first and second n-channel type thin film transistors of said driver circuit and in a semiconductor layer of an n-channel type thin film transistor of said pixel portion; and

selectively doping an n-type impurity element at a concentration from 1×

10¹⁶ to 5×

10¹⁸ atoms/cm³ in said semiconductor layer of said n-channel type thin film transistor of said pixel portion through an insulating film covering at least a side surface of a gate electrode of said n-channel type thin film transistor.

2. A method of manufacturing a semiconductor device according to claim 1, wherein an offset region sandwiched between said n-type impurity region and a channel forming region are formed in said n-channel type thin film transistor of said pixel portion.

3. A method of manufacturing a semiconductor device according to claim 1, wherein said offset region is formed in a self-aligning manner with said insulating film covering said gate electrode of said n-channel type thin film transistor as a mask.

4. A method of manufacturing a semiconductor device according to claim 1, wherein a thickness of said insulating film is 20 to 100 nm.

5. A method of manufacturing a semiconductor device according to claim 1, wherein said semiconductor device is an EL display device.

6. A method of manufacturing a semiconductor device according to claim 1, wherein said semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a portable book, a digital camera, a player using a recording medium, a car navigation system, and a personal computer.

7. A method of manufacturing a semiconductor device comprising a pixel portion and a driver circuit for driving said pixel portion formed over a same substrate, said method comprising:

selectively doping an n-type impurity element at a concentration from 2×

10¹⁶ to 5×

10¹⁹ atoms/cm³ in semiconductor layers of first and second n-channel type thin film transistors of said driver circuit and in a semiconductor layer forming a storage capacitance of said pixel portion;

selectively doping a p-type impurity element at a concentration from 3×

10²⁰ to 3×

10²¹ atoms/cm³ in a semiconductor layer of a p-channel type thin film transistor of said driver circuit;

selectively doping an n-type impurity element at a concentration from 1×

10²⁰ to 1×

10²¹ atoms/cm³ in said semiconductor layers of said first and second n-channel type thin film transistors of said driver circuit and in a semiconductor layer of an n-channel type thin film transistor of said pixel portion; and

selectively doping an n-type impurity element at a concentration from 1×

10¹⁶ to 5×

10¹⁸ atoms/cm³ in said semiconductor layer of said n-channel type thin film transistor of said pixel portion through an insulating film covering at least a side surface of a gate electrode of said n-channel type thin film transistor.

8. A method of manufacturing a semiconductor device according to claim 7, wherein an offset region sandwiched between said n-type impurity region and a channel forming region is formed in said n-channel type thin film transistor of said pixel portion.

9. A method of manufacturing a semiconductor device according to claim 7, wherein said offset region is formed in a self-aligning manner with said insulating film covering said gate electrode of said n-channel type thin film transistor as a mask.

10. A method of manufacturing a semiconductor device according to claim 7, wherein a thickness of said insulating film is 20 to 100 nm.

11. A method of manufacturing a semiconductor device according to claim 7, wherein said semiconductor device is an EL display device.

12. A method of manufacturing a semiconductor device according to claim 7, wherein said semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a portable book, a digital camera, a player using a recording medium, a car navigation system, and a personal computer.

13. A method of manufacturing a semiconductor device comprising a pixel portion and a driver circuit for driving said pixel portion formed over a same substrate, said method comprising:

selectively doping an n-type impurity element at a concentration from 2×

10¹⁶ to 5×

10¹⁹ atoms/cm³ in semiconductor layers of first and second n-channel type thin film transistors of said driver circuit;

selectively doping an n-type impurity element at a concentration from 1×

10¹⁶ to 5×

10¹⁸ atoms/cm³ in a semiconductor layer of an n-channel type thin film transistor of said pixel portion through an insulating film covering at least the side surfaces of a gate electrode of said n-channel type thin film transistor;

selectively doping a p-type impurity element at a concentration from 3×

10²⁰ to 3×

10²¹ atoms/cm³ in a semiconductor layer of a p-channel type thin film transistor of said driver circuit; and

selectively doping an n-type impurity element at a concentration from 1×

10²⁰ to 1×

10²¹ atoms/cm³ in said semiconductor layers of said first and second n-channel type thin film transistors of said driver circuit and in said semiconductor layer of said n-channel type thin film transistor of said pixel portion.

14. A method of manufacturing a semiconductor device according to claim 13, wherein an offset region sandwiched between said n-type impurity region and a channel forming region is formed in said n-channel type thin film transistor of said pixel portion.

15. A method of manufacturing a semiconductor device according to claim 13, wherein said offset region is formed in a self-aligning manner with said insulating film covering said gate electrode of said n-channel type thin film transistor as a mask.

16. A method of manufacturing a semiconductor device according to claim 13, wherein a thickness of said insulating film is 20 to 100 nm.

17. A method of manufacturing a semiconductor device according to claim 13, wherein said semiconductor device is an EL display device.

18. A method of manufacturing a semiconductor device according to claim 13, wherein said semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a portable book, a digital camera, a player using a recording medium, a car navigation system, and a personal computer.

19. A method of manufacturing a semiconductor device comprising a pixel portion and a driver circuit for driving said pixel portion formed over a same substrate, said method comprising:

selectively doping an n-type impurity element at a concentration from 2×

10¹⁶ to 5×

10¹⁹ atoms/cm³ in semiconductor layers of first and second n-channel type thin film transistors of said driver circuit and in a semiconductor layer forming a storage capacitance of said pixel portion;

selectively doping an n-type impurity element at a concentration from 1×

10¹⁶ to 5×

10¹⁸ atoms/cm³ in a semiconductor layer of an n-channel type thin film transistor of said pixel portion through an insulating film covering at least the side surfaces of a gate electrode of said n-channel type thin film transistor;

selectively doping a p-type impurity element at a concentration from 3×

10²⁰ to 3×

10²¹ atoms/cm³ in a semiconductor layer of a p-channel type thin film transistor of said driver circuit; and

selectively doping an n-type impurity element at a concentration from 1×

10²⁰ to 1×

10²¹ atoms/cm³ in said semiconductor layers of said first and second n-channel type thin film transistors of said driver circuit and in said semiconductor layer of said n-channel type thin film transistor of said pixel portion.

20. A method of manufacturing a semiconductor device according to claim 19, wherein an offset region sandwiched between said n-type impurity region and a channel forming region is formed in said n-channel type thin film transistor of said pixel portion.

21. A method of manufacturing a semiconductor device according to claim 19, wherein said offset region is formed in a self-aligning manner with said insulating film covering said gate electrode of said n-channel type thin film transistor as a mask.

22. A method of manufacturing a semiconductor device according to claim 19, wherein a thickness of said insulating film is 20 to 100 nm.

23. A method of manufacturing a semiconductor device according to claim 19, wherein said semiconductor device is an EL display device.

24. A method of manufacturing a semiconductor device according to claim 19, wherein said semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a portable book, a digital camera, a player using a recording medium, a car navigation system, and a personal computer.

25. A method of manufacturing a semiconductor device comprising a pixel portion and a driver circuit for driving said pixel portion formed over a same substrate, said method comprising:

forming at least first to fourth semiconductor layers over a substrate;

forming an insulating film over said at least first to fourth semiconductor layers;

selectively doping an n-type impurity element at a concentration from 2×

10¹⁶ to 5×

10¹⁹ atoms/cm³ in a portion of said second and third semiconductor layers;

selectively doping a p-type impurity element at a concentration from 3×

10²⁰ to 3×

10²¹ atoms/cm³ in a portion of said first semiconductor layer;

selectively doping an n-type impurity element at a concentration from 1×

10²⁰ to 1×

10²¹ atoms/cm³ in a portion of said second to fourth semiconductor layers; and

selectively doping an n-type impurity element at a concentration from 1×

10¹⁶ to 5×

10¹⁸ atoms/cm³ in a portion of said fourth semiconductor layer.

26. A method of manufacturing a semiconductor device according to claim 25, wherein said driver circuit comprises said first to third semiconductor layers.

27. A method of manufacturing a semiconductor device according to claim 25, wherein said pixel portion comprises said fourth semiconductor layer.

28. A method of manufacturing a semiconductor device according to claim 25, wherein said a portion of said fourth semiconductor layer constitutes an electrode of a storage capacitance.

29. A method of manufacturing a semiconductor device according to claim 25, wherein said semiconductor device is an EL display device.

30. A method of manufacturing a semiconductor device according to claim 25, wherein said semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a portable book, a digital camera, a player using a recording medium, a car navigation system, and a personal computer.

31. A method of manufacturing a semiconductor device comprising a pixel portion and a driver circuit for driving said pixel portion formed over a same substrate, said method comprising:

forming at least first to fourth semiconductor layers over a substrate;

forming an insulating film over said at least first to fourth semiconductor layers;

selectively doping an n-type impurity element at a concentration from 2×

10¹⁶ to 5×

10¹⁹ atoms/cm³ in a portion of said second and third semiconductor layers;

selectively doping an n-type impurity element at a concentration from 1×

10¹⁶ to 5×

10¹⁸ atoms/cm³ in a portion of said fourth semiconductor layer;

selectively doping a p-type impurity element at a concentration from 3×

10²⁰ to 3×

10²¹ atoms/cm³ in a portion of said first semiconductor layer; and

selectively doping an n-type impurity element at a concentration from 1×

10²⁰ to 1×

10²¹ atoms/cm³ in a portion of said second to fourth semiconductor layers.

32. A method of manufacturing a semiconductor device according to claim 31, wherein said driver circuit comprises said first to third semiconductor layers.

33. A method of manufacturing a semiconductor device according to claim 31, wherein said pixel portion comprises said fourth semiconductor layer.

34. A method of manufacturing a semiconductor device according to claim 31, wherein said a portion of said fourth semiconductor layer constitutes an electrode of a storage capacitance.

35. A method of manufacturing a semiconductor device according to claim 31, wherein said semiconductor device is an EL display device.

36. A method of manufacturing a semiconductor device according to claim 31, wherein said semiconductor device is at least one selected from the group consisting of a portable telephone, a video camera, a mobile computer, a goggle type display, a projector, a portable book, a digital camera, a player using a recording medium, a car navigation system, and a personal computer.