Double LDD devices for improved DRAM refresh

• US 6,580,149 B2
• Filed: 01/17/2002
• Issued: 06/17/2003
• Est. Priority Date: 08/22/2000
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Tran, Luan C., Kerr, Robert, McQueen, Mark
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nhu, David
• Application Number:
  US10/046,737
• Publication Number:
  US 20020068395A1
• Time in Patent Office: 516 Days
• Field of Search: 257/61, 257/296, 257/336, 257/344, 257/376, 257/408, 257/399, 257/519, 257/544, 257/545, 257/653, 257/654, 257/929, 257/549, 257/550, 257/288, 257/398, 257/400, 257/401, 257/917
• US Class Current: 257/549
• CPC Class Codes: H01L 29/6653 using the removal of at least part of spacer, e.g. disposable spacer
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H10B 12/09 with simultaneous manufacture of the peripheral circuit region and memory cells
• CPC Class Codes: H10B 12/50 Peripheral circuit region structures

Abstract

An integrated circuit device with improved DRAM refresh characteristics, and a novel method of making the device, is provided. A semiconductor substrate is provided with gate structures formed on its surface in each of an array portion and a peripheral portion. Single lightly doped regions are formed adjacent to the channel regions by ion implantation in the substrate. Dielectric spacers having a first width are formed on the substrate surface adjacent to the gate structures covering at least a portion of the single lightly doped regions. Heavily-doped regions are ion-implanted on opposite sides of the gate structure in the peripheral portion. The dielectric spacers are etched back to a second width smaller than the first width. Double lightly doped regions are formed by ion implantation in the substrate in an area of the substrate left exposed by the spacer etch back. Triple lightly doped regions may be also be formed by a first implant at the gate edge, a second implant through an intermediate spacer, and a third implant after the spacer etch back.

Claims

1. An integrated circuit device in a memory array, comprising:

a gate structure formed on and supported by a memory array portion of a substrate;

a channel region formed in said substrate in said array portion;

a single lightly doped region formed in said substrate in said array portion adjacent said channel region;

a double lightly doped region formed in said substrate in said array portion adjacent said single lightly doped region, wherein said single lightly doped region lies between said double lightly doped region and said channel region; and

a triple lightly doped region formed in said substrate adjacent said double lightly doped region, wherein said double lightly doped region lies between said single lightly doped region and said triple lightly doped region.

2. The integrated circuit device of claim 1, further comprising a conductive plug overlying at least said double lightly doped region.

3. The integrated circuit device of claim 1, further comprising a conductive plug overlying at least said triple lightly doped region.

4. A memory device, comprising:

a substrate including an array portion and a periphery portion;

at least two gate structures formed on and supported by said substrate, wherein at least one gate structure is formed in each of said array portion and said periphery portion;

dielectric spacers formed on opposite sides of said gate structures;

at least two channel regions formed in said substrate below said gate structures, wherein each said gate structure controls charge carriers in a respective channel region;

single lightly doped regions formed in said substrate on opposite sides of each said respective channel region;

double lightly doped regions formed in said substrate adjacent each of said single lightly doped regions, wherein one of said single lightly doped regions lies between one of said double lightly doped regions and said respective channel region;

heavily-doped regions formed in said substrate in said periphery portion, wherein one of said single lightly doped regions and one of said double lightly doped regions lie between each of said heavily-doped regions and said respective channel region; and

triple lightly doped regions formed in said substrate adjacent said double lightly doped regions, wherein one of said double lightly doped regions lies between one of said single lightly doped regions and one of said triple lightly doped regions.

5. The memory device of claim 4, further comprising halo implant regions formed in said substrate in said periphery portion, wherein one of said halo implant regions lies between one of said single lightly doped regions and said respective channel region.

6. The memory device of claim 4, further comprising at least one conductive plug formed in said array portion adjacent at least one of said spacers, wherein said conductive plug overlies one of said double lightly doped regions.

7. The memory device of claim 4, further comprising at least one conductive plug formed in said array portion adjacent at least one of said spacers, wherein said conductive plug overlies one of said triple lightly doped regions.

8. A processor-based system, comprising:

a processor;

an integrated memory circuit connected to said processor, said memory circuit comprising;

a gate structure formed on and supported by a memory array portion of a substrate;

a channel region formed in said substrate in said array portion;

a single lightly doped region formed in said substrate in said array portion adjacent said channel region;

a double lightly doped region formed in said substrate in said array portion adjacent said single lightly doped region, wherein said single lightly doped region lies between said double lightly doped region and said channel region; and

a triple lightly doped region formed in said substrate adjacent said double lightly doped region, wherein said double lightly doped region lies between said single lightly doped region and said triple lightly doped region.

9. The processor-based system of claim 8, further comprising a conductive plug overlying at least said double lightly doped region.

10. The processor-based system of claim 8, further comprising a conductive plug overlying at least said triple lightly doped region.

11. A processor-based system, comprising:

a processor;

an integrated memory circuit connected to said processor, said memory circuit comprising;

a substrate including an array portion and a periphery portion;

at least two gate structures formed on and supported by said substrate, wherein at least one gate structure is formed in each of said array portion and said periphery portion;

dielectric spacers formed on and supported by said substrate on opposite sides of said gate structures;

at least two channel regions formed in said substrate, wherein each said gate structure controls charge carriers in a respective channel region;

single lightly doped regions formed in said substrate on opposite sides of each said respective channel region;

double lightly doped regions formed in said substrate adjacent each of said single lightly doped regions, wherein one of said single lightly doped regions lies between one said double lightly doped regions and said respective channel region;

triple lightly doped regions formed in said substrate adjacent said double lightly doped regions, wherein one of said double lightly doped regions lies between one of said single lightly doped regions and one of said triple lightly doped regions; and

heavily-doped regions formed in said substrate in said periphery portion, wherein one of said single lightly doped regions one of said double lightly doped regions and one of said triple lightly doped regions lie between each of said heavily-doped regions and said respective channel region.

12. An embedded-memory processor-based system, comprising:

a processor;

a memory circuit formed on a same integrated circuit as said processor, said memory circuit comprising;

a gate structure formed on and supported by a memory array portion of a substrate;

a channel region formed in said substrate in said array portion;

a single lightly doped region formed in said substrate in said array portion adjacent said channel region;

a double lightly doped region formed in said substrate in said array portion adjacent said single lightly doped region, wherein said single lightly doped region lies between said double lightly doped region and said channel region; and

a triple lightly doped region formed in said substrate adjacent said double lightly doped region, wherein said double lightly doped region lies between said single lightly doped region and said triple lightly doped region.

13. The embedded-memory processor-based system of claim 12, further comprising a conductive plug overlying at least said double lightly doped region.

14. The embedded-memory processor-based system of claim 12, further comprising a conductive plug overlying at least said triple lightly doped region.

15. An embedded-memory processor based system, comprising:

a processor;

a memory circuit formed on a same integrated circuit as said processor, said memory circuit comprising;

a substrate including an array portion and a periphery portion;

at least two gate structures formed on and supported by said substrate, wherein at least one gate structure is formed in each of said array portion and said periphery portion;

dielectric spacers formed on and supported by said substrate on opposite sides of said gate structures;

at least two channel regions formed in said substrate, wherein each said gate structure controls charge carriers in a respective channel region;

single lightly doped regions formed in said substrate on opposite sides of each said respective channel region;

double lightly doped regions formed in said substrate adjacent each of said single lightly doped regions, wherein one of said single lightly doped regions lies between one said double lightly doped regions and said respective channel region;

triple lightly doped regions formed in said substrate adjacent said double lightly doped regions, wherein one of said double lightly doped regions lies between one of said single lightly doped regions and one of said triple lightly doped regions; and

heavily-doped regions formed in said substrate in said periphery portion) wherein one of said single lightly doped regions, one of said double lightly doped regions and one of said triple lightly doped regions lie between each of said heavily-doped regions and said respective channel region.