Photonic crystal formed by laser machining and having holes with sub-wavelength pitch

• US 6,580,547 B2
• Filed: 01/03/2002
• Issued: 06/17/2003
• Est. Priority Date: 12/23/1999
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Li, Ming, Liu, Xinbing
• Primary Examiner(s): Ben, Loha
• Application Number:
  US10/038,416
• Publication Number:
  US 20020063112A1
• Time in Patent Office: 530 Days
• Field of Search: 359/321, 359/245, 359/237, 359/322, 219/121.71, 219/121.69, 250/214.1, 343/786, 343/772
• US Class Current: 359/321
• CPC Class Codes: B23K 2103/16 Composite materials , e.g. fibre reinforced
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 26/0624 using ultrashort pulses, i.e. pulses of 1ns or less
• CPC Class Codes: B23K 26/382 by boring
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices

Abstract

A method of laser machining using an ultra-fast pulse laser is presented. According to the present invention a plurality of holes with a pitch less than the wavelength of the laser are drilled into a material sample. Reliable and reproducible hole drilling is accomplished through an exemplary drilling sequence which applies a number of pulses at a first pulse energy to the surface spaced to avoid laser hardening of the surface for adjacent holes of a first set of holes. Next, the number of pulses is increased or the energy of the laser beam is increased to drill holes that are interstitial to the first set of holes. The exemplary laser machining process may used to produce both one-dimensional and two-dimensional photonic crystals, among other applications.

Claims

1. A photonic crystal comprising a substrate having a plurality of holes formed by a method comprising the steps of:

a) setting a pulse energy of a laser beam to a first predetermined level, selected to provide an intensity greater than an ablation threshold of the substrate within a hole-drilling portion of the laser beam;

b) positioning the substrate to focus the laser beam on one of a plurality of first positions on a surface of the substrate;

c) applying a number of pulses of the laser beam to ablate the surface, thereby forming one of the plurality of holes in the surface;

d) repeating steps b) and c) until all of the plurality of first positions on the surface have one of the plurality of holes;

e) setting the pulse energy of the laser beam to a second predetermined level, selected to provide an intensity greater than a laser hardened ablation threshold of the substrate within the hole-drilling portion of the laser beam;

f) positioning the substrate to focus the laser beam on one of at least one second position on the surface, wherein the one second position is between two adjacent ones of the plurality of first positions; and

g) applying a number of pulses of the laser beam to ablate the surface, thereby forming one of the plurality of holes in the surface.

2. The photonic crystal of claim 1, wherein the substrate includes a dielectric material.

3. The photonic crystal of claim 1, wherein the substrate includes a multi-layered dielectric material.

4. The photonic crystal of claim 3, wherein the multi-layered dielectric material includes a silicon layer and a silicon dioxide layer.

5. The photonic crystal of claim 1 wherein the plurality of holes is a linear array of holes and the photonic crystal is a one-dimensional photonic crystal.

6. The photonic crystal of claim 1 wherein the plurality of holes is a matrix of linear holes and the photonic crystal is a two-dimensional photonic crystal.