SOI/glass process for forming thin silicon micromachined structures

• US 6,582,985 B2
• Filed: 12/27/2000
• Issued: 06/24/2003
• Est. Priority Date: 12/27/2000
• Status: Expired due to Fees

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Cabuz, Cleopatra, Ridley, Jeffrey Alan
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Huynh, Andy
• Application Number:
  US09/748,488
• Publication Number:
  US 20020081821A1
• Time in Patent Office: 909 Days
• Field of Search: 438/50, 438/151, 438/456, 438/510, 438/48
• US Class Current: 438/48
• CPC Class Codes: B81B 2201/0228 Inertial sensors
• CPC Class Codes: B81C 1/0015 Cantilevers switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688

Abstract

Methods for making thin silicon layers suspended over recesses in glass wafers. One method includes providing a thin silicon-on-insulator (SOI) wafer, and a glass wafer. The SOI wafer can include a silicon oxide layer disposed between a first undoped or substantially undoped silicon layer and a second silicon layer. Recesses can be formed in the glass wafer surface and electrodes may be formed on the glass wafer surface. The first silicon layer of the SOI wafer is then bonded to the glass wafer surface having the recesses, and the second silicon layer is subsequently removed using the silicon oxide layer as an etch stop. Next, the silicon oxide layer is removed. The first silicon layer can then be etched to form the desired structure. In another illustrative embodiment, the first silicon layer has a patterned metal layer thereon. The SOI wafer is bonded to the glass wafer, with the patterned metal layer positioned adjacent the recesses in the glass wafer. Then, the second silicon layer is removed using the silicon oxide layer as an etch stop, and the silicon oxide layer is subsequently removed. The first silicon layer is then etched using the patterned metal layer as an etch stop. The patterned metal layer is then removed.

Claims

1. A method for making a thin silicon suspended structure comprising the steps of:

providing a glass wafer or substrate having a surface;

providing an SOI wafer having an insulating layer disposed between a first silicon layer and a second silicon layer;

forming a recess in said glass wafer surface;

bonding said SOI wafer to said glass wafer surface such that at least part of said first silicon layer is bonded to said glass wafer surface so that at least part of said first silicon layer overhangs said recess;

removing said second silicon layer of the SOI wafer;

removing the insulating layer of the SOI wafer; and

selectively patterning the first silicon layer of the SOI wafer after removing the insulating layer to form a thin silicon suspended structure that at least partially overhangs said recess.

2. The method for making the thin silicon suspended structure as in claim 1, further comprising forming at least one electrode on said glass wafer surface that is in alignment with at least part of said recess.

3. The method for making the thin silicon suspended structure as in claim 1, wherein said electrode forming step includes forming a titanium-platinum electrode.

4. The method for making the thin silicon suspended structure as in claim 1, wherein said electrode forming step includes forming a gold electrode.

5. The method for making the thin silicon suspended structure as in claim 1, wherein said bonding step includes anodic bonding.

6. The method for making the thin silicon suspended structure as in claim 1, wherein said removing the second silicon layer step includes grinding.

7. The method for making the thin silicon suspended structure as in claim 6, wherein said removing the second silicon layer step further includes reactive ion etching.

8. The method for making the thin silicon suspended structure as in claim 1, wherein said removing the second silicon layer step includes KOH etching.

9. The method for making the thin silicon suspended structure as in claim 8, wherein said removing the second silicon layer step further includes reactive ion etching.

10. The method for making the thin silicon suspended structure as in claim 1, wherein said removing the second silicon layer step includes dry etching.

11. The method for making the thin silicon suspended structure as in claim 1, wherein said removing the insulating layer step includes BOE etching.

12. The method for making the thin silicon suspended structure as in claim 1, wherein said selectively removing said first silicon layer step includes etching.

13. The method for making the thin silicon suspended structure as in claim 12, wherein said selectively removing said first silicon layer step includes DRIE etching.

14. The method for making the thin silicon suspended structure as in claim 12, wherein said selectively removing said first silicon layer step includes reactive ion etching.

15. The method for making the thin silicon suspended structure as in claim 1, wherein said selectively removing said first silicon layer step includes photolithography and deep reactive ion etching (DRIE).

16. A method for making a thin silicon suspended structure comprising the steps of:

providing a glass wafer or substrate having a surface;

providing a SOI wafer having an insulating layer disposed between a first silicon layer and a second silicon layer;

forming a recess in said glass wafer surface or the first silicon layer of the SOI wafer;

providing a patterned metal layer adjacent the first silicon layer, the patterned metal layer coinciding with at least part of said recess;

bonding said SOI wafer to said glass wafer surface such that at least part of said first silicon layer is bonded to said glass wafer surface so that at least part of said first silicon layer is bonded to said glass wafer surface so that at least part of said first silicon layer overhangs said recess;

removing said second silicon layer;

removing said insulating layer;

selectively patterning the first silicon layer to form a thin silicon suspended structure that at least partially overhangs said recess; and

removing said metal layer.

17. The method for making the thin silicon suspended structure as in claim 16, further comprising forming at least one electrode on said glass wafer that aligns with at least part of said recess.

18. The method for making the thin silicon suspended structure as in claim 16, wherein said bonding step includes anodic bonding.

19. The method for making the thin silicon suspended structure as in claim 16, wherein said removing the second silicon layer step includes grinding.

20. The method for making the thin silicon suspended structure as in claim 19, wherein said removing the second silicon layer step further includes reactive ion etching.

21. The method for making the thin silicon suspended structure as in claim 16, wherein said removing the second silicon layer step includes KOH etching.

22. The method for making the thin silicon suspended structure as in claim 21, wherein said removing the second silicon layer step further includes reactive ion etching.

23. The method for making the thin silicon suspended structure as in claim 16, wherein said removing the second silicon layer step includes dry etching.

24. The method for making the thin silicon suspended structure as in claim 16, wherein said removing the insulating layer step includes BOE etching.

25. The method for making the thin silicon suspended structure as in claim 16, wherein said selectively patterning said first silicon layer step includes etching.

26. The method for making the thin silicon suspended structure as in claim 25, wherein said selectively removing said first silicon layer step includes plasma etching.

27. The method for making the thin silicon suspended structure as in claim 25, wherein said selectively removing said first silicon layer step includes reactive ion etching.

28. The method for making the thin silicon suspended structure as in claim 25, wherein said selectively removing said first silicon layer step includes deep reactive ion etching.

29. A method for making a thin suspended structure comprising the steps of:

providing a first wafer or substrate having a surface;

providing a second wafer having an etch stop layer disposed between a first layer and a second layer;

forming a recess in said first wafer surface;

bonding said second wafer to said first wafer surface such that at least part of said first layer of said second wafer is bonded to said first wafer surface so that at least part of said first layer overhangs said recess;

removing said second layer of the second wafer;

removing the etch stop layer of the second wafer; and

selectively patterning the first layer of the second wafer after removing the etch stop layer to form a thin suspended structure that at least partially overhangs said recess.

30. A method for making a thin silicon suspended structure comprising the steps of:

providing a glass wafer or substrate having a surface;

providing an SOI wafer having an insulating layer disposed between a first silicon layer and a second silicon layer;

forming a recess at most partially through said first silicon layer of said SOI wafer;

bonding said SOI wafer to said glass wafer surface such that at least part of said first silicon layer is bonded to said glass wafer surface so that at least part of said first silicon layer overhangs said recess;

removing said second silicon layer of the SOI wafer;

removing the insulating layer of the SOI wafer; and

selectively patterning the first silicon layer of the SOI wafer to form a thin silicon suspended structure that at least partially overhangs said recess.

31. The method of claim 30 wherein the step of selectively patterning the first silicon layer of the SOI wafer to form a thin silicon suspended structure that at least partially overhangs said recess is performed after the step of removing the insulating layer of the SOI wafer.

32. The method of claim 30 further comprising the steps of:

providing a metal layer on said first silicon layer of the SOI wafer in the recess prior to the bonding step; and

removing the metal layer after the first silicon layer of the SOI wafer is selectively patterned.

33. A method for making a thin silicon suspended structure comprising the steps of:

providing a first wafer or substrate having a surface;

providing a second wafer having an etch stop layer disposed between a first layer and a second layer;

forming a recess at most partially into said first layer of said second wafer;

bonding said second wafer to said surface of said first wafer such that at least part of said first layer of said second wafer is bonded to said surface so that at least part of said first layer overhangs said recess;

removing said second layer of the second wafer;

removing the etch stop layer of the second wafer; and

selectively patterning the first layer of the second wafer to form a thin suspended structure that at least partially overhangs said recess.

34. The method of claim 33 wherein the step of selectively patterning the first layer of the second wafer to form a thin suspended structure that at least partially overhands said recess is performed after the step of removing the etch stop layer of the second wafer.

35. The method of claim 33 further comprising the steps of:

providing a metal layer on said first layer of the second wafer in the recess prior to the bonding step; and

removing the metal layer after the first layer of the second wafer is selectively patterned.