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Method of fabricating capacitor having hafnium oxide

  • US 6,583,021 B2
  • Filed: 05/09/2002
  • Issued: 06/24/2003
  • Est. Priority Date: 06/30/2001
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating a capacitor, the method comprising the steps of:

  • (a) forming a Ti1−

    x
    HfxN layer on a substrate, wherein x is in a range from 0 to about 0.5;

    (b) forming an electrode layer on the Ti1−

    x
    HfxN layer; and

    (c) forming a HfO2 layer on an interface between the electrode layer and the Ti1−

    x
    HfxN layer by performing a thermal treatment in an oxygen gas-containing atmosphere, said capacitor comprising a bottom electrode formed from the Ti1−

    x
    HfxN layer, a dielectric layer is formed with the HfO2 layer, and a top electrode formed from the electrode layer.

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