Substrate support tolerant to thermal expansion stresses

• US 6,583,980 B1
• Filed: 08/18/2000
• Issued: 06/24/2003
• Est. Priority Date: 08/18/2000
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Wang, You, Kholodenko, Arnold, Shamouilian, Shamouil, Cheng, Wing L., Veytser, Alexander M.
• Primary Examiner(s): Sircus, Brian
• Assistant Examiner(s): KITOV, ZEEV V
• Application Number:
  US09/641,536
• Time in Patent Office: 1,040 Days
• Field of Search: 361/234, 361/233, 165/81, 165/80
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

A chamber 30 for processing a substrate 25 comprises a support 55 including an electrode 70 at least partially covered by a dielectric 60 that is permeable to electromagnetic energy. The electrode 70 may be chargeable to electrostatically hold the substrate 25, to couple energy to a gas in the chamber 30, or both. A base 90 below the support 55 comprises a slot 95 that may be adapted to serve as a thermal expansion slot to reduce thermal stresses.

Claims

1. A support capable of holding a substrate in a chamber, the support comprising at least one support section that supports an electrostatic chuck, the support section having a slot exlending through the thickness of the support section without cutting across an entire surface of the support section, the slot being shaped and sized to reduce adverse thermal expansion effects during use of the support in the chamber.

2. A support according to claim 1 wherein the slot extends substantially vertically through the support section.

3. A support according to claim 1 wherein the slot extends radially or circumferentially across a portion of the support section.

4. A support according to claim 1 wherein the slot comprises a gap and the support section comprises a diameter, and wherein the ratio of the size of the gap to the diameter of the support section is from about 0.0002 to about 0.025.

5. A support according to claim 1 wherein the slot comprises a radial or circular cut.

6. A support according to claim 1 comprising a plurality of slots.

7. A support according to claim 6 wherein at least a pair of slots are radially offset from one another.

8. A support according to claim 1 wherein the support section comprises a diameter sized in relation to the size of a substrate that may be supported by the support section.

9. A support according to claim 1 wherein the support section comprises an electrostatic chuck, base or pedestal.

10. A support according to claim 1 wherein the support section comprises one or more of aluminum oxide, aluminum nitride, boron nitride, boron carbide, carbon, cordierite, mullite, silicon, silicon carbide, silicon nitride, silicon oxide, titanium oxide, zirconium oxide, or mixtures and compounds thereof.

41. A support according to claim 1 wherein the support section has a plurality radially offset slots that are interdigited or interlaced without cutting across the entire surface of the section.

11. A substrate support comprising:

an electrostatic chuck comprising an electrode and a dielectric at least partially covering the electrode; and

a base below the electrode, the base comprising a slot that extends through the thickness of the base without cutting across an entire surface of the base.

12. A support according to claim 11 wherein the slot is adapted to reduce a thermal expansion stress of the substrate support.

13. A support according to claim 11 wherein the slot comprises a gap and the base comprises a diameter, and wherein the ratio of the size of the gap to the diameter of the base is from about 0.0002 to about 0.025.

14. A support according to claim 11 wherein the slot extends radially or circumferentially across a portion of the base.

15. A support according to claim 11 wherein the slot comprises a radial or circular cut across a portion of the base.

16. A support according to claim 11 comprising a plurality of slots.

17. A support according to claim 16 wherein at least a pair of slots are radially offset from one another.

18. A support according to claim 11 wherein the base comprises one or more of aluminum oxide, aluminum nitride, boron nitride, boron carbide, carbon, cordierite, mullite, silicon, silicon carbide, silicon nitride, silicon oxide, titanium oxide, zirconium oxide, or mixtures and compounds thereof.

19. A support according to claim 11 wherein the dielectric is bonded to the base by a metal layer.

20. A support according to claim 19 wherein the metal layer comprises one or more of aluminum, copper or molybdenum.

42. A support according to claim 11 wherein the base comprises a plurality of radially offset slots that are interdigited or interlaced without cutting across the entire surface of the base.

21. A substrate processing chamber comprising:

a substrate support comprising a dielectric at least partially covering an electrode, and an underlying base comprising a slot that extends through the thickness of the base without cutting across an entire surface of the base;

a gas distributor;

a gas energizer; and

a gas exhaust,

whereby a substrate received on the substrate support may be processed by gas introduced through the gas distributor, energized by the gas energizer, and exhausted by the gas exhaust.

22. A chamber according to claim 21 wherein the slot in the base comprises a thermal expansion slot.

23. A chamber according to claim 22 wherein the thermal expansion slot extends radially or circumferentially across the base.

43. A chamber according to claim 21 wherein the base comprises a plurality of radially offset slots that are interdigited or interlaced without cutting across the entire surface of the base.

24. A method of fabricating a substrate support, the method comprising the steps of:

forming an electrostatic chuck by forming an electrode and covering the electrode at least partially with a dielectric;

forming a base to support the electrode; and

forming a thermal expansion slot in the base such that the thermal expansion slot extends through the thickness of the base without cutting across an entire surface of the base.

25. A method according to claim 24 comprising forming a thermal expansion slot that extends radially or circumferentially across a portion of the base.

26. A method according to claim 24 comprising cutting out the thermal expansion slot in the base.

27. A method according to claim 24 comprising bonding the dielectric to the base.

28. A method according to claim 27 comprising bonding the dielectric to the base by one or more metal layers.

29. A method according to claim 27 comprising bonding the dielectric to the base by brazing or infiltration.

44. A method according to claim 24 comprising forming a plurality of radially offset thermal expansion slots in the base such that the thermal expansion slots are interdigited or interlaced without cutting across the entire surface of the base.

30. A support capable of holding a substrate in a chamber, the support comprising a plurality of support sections that are joined to one another by at least one bond comprising a plurality of layers, the plurality of layers comprising different materials.

31. A support according to claim 30 wherein the materials include one or more metals.

32. A support according to claim 31 wherein the metals comprise one or more of aluminum, copper, iron, molybdenum, titanium, tungsten or alloys thereof.

33. A support according to claim 30 wherein at least one support section comprises a slot extending through the thickness of the support section.

34. A support according to claim 33 wherein the slot is shaped and sized to reduce adverse thermal expansion effects during use of the support in the chamber.

35. A support according to claim 30 wherein the slot extends radially or circumferentially across a portion of the support section.

36. A support capable of holding a substrate in a chamber, the support comprising at least one support section and a slot extending through the thickness of the section, the slot comprising a gap that is shaped and sized to reduce adverse thermal expansion effects during use of the support in the chamber, and the ratio of the size of the gap to a diameter of the support section hyping from about 0.0002 to about 0.025.

37. A substrate support comprising:

an electrostatic chuck comprising an electrode and a dielectric at least partially covering the electrode; and

a base below the electrode, the base comprising a slot that comprises a gap, and the ratio of the size of the gap to a diameter of the base being from about 0.0002 to about 0.025.

38. A substrate support comprising:

an electrostatic chuck comprising an electrode and a dielectric at least partially covering the electrode; and

a base below the electrode and bonded to the dielectric by a metal layer, the base comprising a slot.

39. A method of fabricating a substrate support, the method comprising the steps of:

forming an electrostatic chuck by forming an electrode and covering the electrode at least partially with a dielectric;

forming a base to support the electrode;

forming a thermal expansion slot in the base; and

bonding the dielectric to the base by one or more metal layers.

40. A method of fabricating a substrate support, the method comprising the steps of:

forming an electrostatic chuck by forming an electrode and covering the electrode at least partially with a dielectric;

forming a base to support the electrode; and

cutting out a thermal expansion slot in the base.