Method of forming fine pattern
First Claim
1. A fine pattern formation method under which a fine pattern is formed by applying a photoresist over an underlying substrate, exposing the photoresist to light of a single wavelength so as to form a fine resist pattern, and etching the underlying substrate while the resist pattern is used as a mark, the method comprising the steps of:
- forming a silicon-nitride-based film directly on the underlying substrate or directly on one or more layers formed on the underlying substrate;
forming a photoresist directly on the silicon-nitride-based film or directly on one or more layers formed on the silicon-nitride-based film;
exposing the photoresist to light, to thereby transfer a mask pattern onto the photoresist; and
etching the silicon-nitride-based film while the thus-transferred resist pattern is taken as a mask, wherein processing pertaining to the step of depositing the silicon-nitride-based film is effected by means of employing a plasma CVD system, the temperature at which the underlying substrate is to be situated is set so as to fall within the range of from 500 to 700°
C.
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Abstract
There is described a method of forming a fine pattern aimed at depositing a silicon-nitride-based anti-reflection film which is stable even at high temperature and involves small internal stress. The method is also intended to preventing occurrence of a footing pattern (a rounded corner) in a boundary surface between a photoresist and a substrate at the time of formation of a chemically-amplified positive resist pattern on the anti-reflection film. The method includes the steps of forming a silicon-nitride-based film directly on a substrate or on a substrate by way of another layer; and forming a photoresist directly on the silicon-nitride-based film or on the silicon-nitride-based film by way of another layer. The silicon-nitride-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system. The method further includes a step of depositing a silicon-oxide-based film immediately below the photoresist. The silicon-oxide-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system.
208 Citations
12 Claims
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1. A fine pattern formation method under which a fine pattern is formed by applying a photoresist over an underlying substrate, exposing the photoresist to light of a single wavelength so as to form a fine resist pattern, and etching the underlying substrate while the resist pattern is used as a mark, the method comprising the steps of:
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forming a silicon-nitride-based film directly on the underlying substrate or directly on one or more layers formed on the underlying substrate;
forming a photoresist directly on the silicon-nitride-based film or directly on one or more layers formed on the silicon-nitride-based film;
exposing the photoresist to light, to thereby transfer a mask pattern onto the photoresist; and
etching the silicon-nitride-based film while the thus-transferred resist pattern is taken as a mask, wherein processing pertaining to the step of depositing the silicon-nitride-based film is effected by means of employing a plasma CVD system, the temperature at which the underlying substrate is to be situated is set so as to fall within the range of from 500 to 700°
C.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification
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- Resources
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Current AssigneeASM Japan K.K. (ASM International NV), Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
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Original AssigneeASM Japan K.K. (ASM International NV), Semiconductor Leading Edge Technologies, Inc.
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InventorsArai, Hiroki, Okabe, Ichiro
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Primary Examiner(s)Duda; Kathleen
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Application NumberUS09/587,359Time in Patent Office1,124 DaysField of Search430/311,313,317,327,330 216/41,51US Class Current430/317CPC Class CodesG03F 7/0045 with organic non-macromolec...G03F 7/091 characterised by antireflec...G03F 7/16 Coating processes; Apparatu...
