Method for depositing conformal nitrified tantalum silicide films by thermal CVD
First Claim
1. A method of depositing a nitrified tantalum silicide (TaSiN) barrier film on a semiconductor device substrate having a temperature in the range of about 250°
- C.-450°
C., the method comprising;
depositing a TaSiy film on said substrate by a thermal chemical vapor deposition (TCVD) process including providing a vapor of a precursor selected from the group consisting of TaF5 and TaCl5 to a reaction chamber containing said substrate by heating said precursor to a temperature sufficient to vaporize said precursor and combining said vapor with a process gas comprising silane, then incorporating nitrogen into said TaSiy film to form said TaSiN film by a method selected from the group consisting of;
a) exposing said TaSiy film to a NH3-containing plasma;
b) exposing said TaSiy film to a N2-containing plasma; and
c) exposing said TaSiy film to a thermal NH3-containing gas.
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Abstract
Method for depositing a nitrified tantalum silicide barrier film on a semiconductor device including a silicon-based substrate with recessed features by low temperature thermal CVD of tantalum silicide and subsequent nitrification. The nitrified tantalum silicide barrier film exhibits high conformality and low fluorine or chlorine impurity content. A specific embodiment of the method includes depositing tantalum silicide by TCVD from the reaction of a TaF5 or TaCl5 precursor vapor with silane gas on a 250° C.-450° C. heated substrate, then exposing the tantalum silicide to a thermal NH3 treatment or an NH3— or N2-containing plasma treatment.
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Citations
55 Claims
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1. A method of depositing a nitrified tantalum silicide (TaSiN) barrier film on a semiconductor device substrate having a temperature in the range of about 250°
- C.-450°
C., the method comprising;depositing a TaSiy film on said substrate by a thermal chemical vapor deposition (TCVD) process including providing a vapor of a precursor selected from the group consisting of TaF5 and TaCl5 to a reaction chamber containing said substrate by heating said precursor to a temperature sufficient to vaporize said precursor and combining said vapor with a process gas comprising silane, then incorporating nitrogen into said TaSiy film to form said TaSiN film by a method selected from the group consisting of;
a) exposing said TaSiy film to a NH3-containing plasma;
b) exposing said TaSiy film to a N2-containing plasma; and
c) exposing said TaSiy film to a thermal NH3-containing gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
- C.-450°
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24. A method of depositing a nitrified tantalum suicide (TaSiN) barrier film on a semiconductor device substrate having a temperature in the range of about 250°
- C.-450°
C., the method comprising;depositing a TaSiy film on said substrate by a thermal chemical vapor deposition (TCVD) process including delivering a tantalum pentafluoride precursor to a reaction chamber containing said substrate without a carrier gas by heating said precursor to a temperature in the range of about 80°
C.-150°
C. sufficient to produce a vapor of said precursor to provide a pressure of at least about 3 Torr to deliver said vapor of said precursor and combining said vapor with a process gas comprising silane,then incorporating nitrogen into said TaSiy film to form said TaSiN film by a method selected from the group consisting of;
a) exposing said TaSiy film to a NH3-containing plasma;
b) exposing said TaSiy film to a N2-containing plasma; and
c) exposing said TaSiy film to a thermal NH3-containing gas. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
- C.-450°
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40. A method of depositing a nitrified tantalum silicide (TaSiN) barrier film on a semiconductor device substrate having a temperature in the range of about 250°
- C.-450°
C., the method comprising;depositing a TaSiy film on said substrate by a thermal chemical vapor deposition (TCVD) process including delivering a tantalum pentachloride precursor to a reaction chamber containing said substrate without a carrier gas by heating said precursor to a temperature in the range of about 130°
C.-150°
C. sufficient to produce a vapor of said precursor to provide a pressure of at least about 3 Torr to deliver said vapor of said precursor and combining said vapor with a process gas comprising silane,then incorporating nitrogen into said TaSiy film to form said TaSiN film by a method selected from the group consisting of;
a) exposing said TaSiy film to a NH3-containing plasma;
b) exposing said TaSiy film to a N2-containing plasma; and
c) exposing said TaSiy film to a thermal NH3-containing gas. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55)
- C.-450°
Specification