High frequency switch and mobile communication equipment

• US 6,586,786 B2
• Filed: 12/27/2001
• Issued: 07/01/2003
• Est. Priority Date: 12/27/2000
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Ishizaki, Toshio, Tanaka, Masaharu, Yamada, Toru, Kitazawa, Shoichi
• Primary Examiner(s): Crane, Sara
• Assistant Examiner(s): IM, JUNGHWA M
• Application Number:
  US10/032,856
• Publication Number:
  US 20020100970A1
• Time in Patent Office: 551 Days
• Field of Search: 257/724, 257/342, 257/728, 257/275, 257/274, 257/664, 333/103, 333/262, 333/204
• US Class Current: 257/275
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01P 1/15 by semiconductor devices

Abstract

A high frequency switch, has

a transmitting terminal;

a receiving terminal;

an antenna terminal;

a first diode having an anode electrically connected to the transmitting terminal and a cathode electrically connected to the antenna terminal;

a second diode having an anode connected through a transmission line of ¼ wavelength to the antenna terminal which is electrically connected to the receiving terminal, and having the side of a cathode grounded; and

a control terminal provided to a node between the transmitting terminal and the first anode,

wherein the first and second diodes have a tradeoff relationship between ON resistance thereof and capacitance between the anode and the cathode, and

the ON resistance of the first diode is lower than the ON resistance of the second diode, and the capacitance of the second diode in the OFF state is smaller than the capacitance of the first diode in the OFF state.

Claims

1. A high frequency switch, comprising:

a transmitting terminal;

a receiving terminal;

an antenna terminal;

a first diode having an anode electrically connected to said transmitting terminal and a cathode electrically connected to said antenna terminal;

a second diode having an anode connected through a transmission line of ¼

wavelength to the antenna terminal which is electrically connected to said receiving terminal, and having the side of a cathode grounded; and

a control terminal provided to a node between said transmitting terminal and said first anode,

wherein said first and second diodes have a tradeoff relationship between ON resistance thereof and capacitance between said anode and said cathode, and

the ON resistance of the first diode is lower than the ON resistance of the second diode, and the capacitance of the second diode in the OFF state is smaller than the capacitance of the first diode in the OFF state.

2. The high frequency switch according to claim 1,

wherein a diode having a ON resistance of not higher than 1Ω is used for said first diode and a diode having an inter-terminal capacitance of not larger than 0.8 pF in the OFF state is used for said second diode.

3. The high frequency switch according to claim 1,

wherein a diode having a ON resistance of not higher than 0.8Ω

is used for said first diode and a diode having an inter-terminal capacitance of not larger than 0.5 pF in the OFF state is for said second diode.

4. The high frequency switch according to any one of claims from 1 to 3, further comprising an inductor element or a series circuit of LC connected in parallel with said first diode.

5. The high frequency switch according to any one of claims from 1 to 3, further comprising a capacitor element or a parallel circuit of LC connected in series with said second diode.

6. Radio communication equipment, comprising:

an antenna;

transmitting means for transmitting a signal from said antenna;

receiving means for receiving a signal from said antenna; and

switch means for switching the connection between said antenna and said transmitting means or said receiving means,

wherein the high frequency switch according to any one of claims 1 to 3 is used for said switch means.