Three transistor active pixel sensor architecture with correlated double sampling

• US 6,587,146 B1
• Filed: 11/20/1998
• Issued: 07/01/2003
• Est. Priority Date: 11/20/1998
• Status: Expired due to Term

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: Eastman Kodak Company
• Inventors: Guidash, Robert M.
• Primary Examiner(s): Garber, Wendy R.
• Assistant Examiner(s): Rosendale, Matthew L
• Application Number:
  US09/197,364
• Time in Patent Office: 1,684 Days
• Field of Search: 348/241, 348/302, 348/308, 257/291, 257/239, 377/60
• US Class Current: 348/308
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70

Abstract

An active pixel sensor having a plurality of pixels with at least one pixel comprising: a photodetector operatively connected to a first electrical node; a pixel signal coupling capacitor having a first side connected to the first electrical node and a second side connected to a second electrical node; a reset transistor having a first source that is connected on the first electrical node and a second source that it connected to the second electrical node; a reset gate on the reset transistor connected to a reset control buss and a drain on the reset transistor connected to a voltage supply buss; an amplifier operatively connected to the second electrical node; and a select transistor operatively coupled to the amplifier. The preferred embodiment of the invention has a gate electrode layer formed over at least a portion of the photodetector and functions also as the gate of the transistor amplifier. It is envisioned by the preferred embodiment that the gate electrode layer be either polysilicon or indium tin oxide (ITO) which are materials typically used as gate electrode materials.

Claims

1. An active pixel sensor having a plurality of pixels with at least one pixel comprising:

a photodetector operatively connected to a first electrical node;

a pixel signal coupling capacitor having a first side connected to the first electrical node and a second side connected to a second electrical node;

a reset transistor having a first source that is connected to the first electrical node and a second source that is connected to the second electrical node;

a reset gate on the reset transistor connected to a reset control buss and a drain on the reset transistor connected to a voltage supply buss; and

an amplifier operatively connected to the second electrical node.

2. The invention of claim 1 wherein the amplifier is a source follower amplifier coupled to a select transistor such that enabling the select transistor provides the source follower output signal corresponding to the magnitude of the second electrical node voltage onto an output signal buss.

3. The invention of claim 1 wherein further comprising a select transistor is a row select transistor that provides the amplifier output signal corresponding to the magnitude of the second electrical node voltage onto an output signal buss.

4. The invention of claim 1 wherein application of a predetermined signal to the reset gate resets the first electrical node and the photodetector to a predetermined first potential, the second electrical node to a predetermined second potential, and application of a second predetermined signal to the reset gate allows the second side of the capacitor on the second electrical node to float while the photodetector connected to the first electrical node is allowed to collect charge.

5. The invention of claim 4 wherein the first side and the second side of the capacitor store any change in potential after application of the second predetermined signal to the reset gate.

6. The invention of claim 1 wherein the reset transistor having a first source and second source is replaced with a first reset transistor having the first source and a second reset transistor having the second source.

7. The invention of claim 1 wherein the signal coupling capacitor is formed by the photodetector, and a polysilicon layer overlapping at least a portion of the photodetector, and separated from the photodetector by a dielectric layer.

8. The invention of claim 1 further comprising an indium tin oxide (ITO) electrode operatively connected to the photodetector to control the photodetector potential level.

9. The invention of claim 1 wherein the signal coupling capacitor is formed by the photodetector, and an indium tin oxide (ITO) layer overlapping at least a portion of the photodetector, and separated from the photodetector by a dielectric layer.

10. An active pixel sensor having a plurality of pixels with at least one pixel comprising:

a photodetector having a reset mechanism operatively connected to a first side of a capacitor at a first electrical node;

a second side of the capacitor that is operatively coupled to the reset mechanism at a second electrical node;

means for activating the reset mechanism such that the first and the second electrical nodes are set to respective first and second potentials; and

an amplifier operatively connected to the second electrical node; and

wherein application of a predetermined signal to the reset mechanism resets the first electrical node and the photodetector to a predetermined first potential, the second electrical node to a predetermined second potential, and application of a second predetermined signal to the reset mechanism allows the second side of the capacitor on the second electrical node to float while the photodetector connected to the first electrical node is allowed to collect charge.

11. The active pixel sensor of claim 10 wherein the reset means further comprise:

a reset transistor having a first source that is connected on the first electrical node and a second source that is connected to the second electrical node; and

a reset gate on the reset transistor connected to a reset control buss and a drain on the reset transistor connected to a supply voltage buss.

12. The invention of claim 10 wherein the amplifier is a source follower amplifier coupled to a select means which comprise a select transistor such that enabling the select transistor provides the source follower output signal corresponding to the magnitude of the second electrical node voltage onto an output signal buss.

13. The invention of claim 12 further comprising a select transistor that is a row select transistor that provides the source follower output signal corresponding to the magnitude of the second electrical node voltage to a column output signal buss.

14. The invention of claim 10 wherein the first side and the second side of the capacitor store any change in potential after application of the second predetermined signal to the reset gate.

15. The invention of claim 10 wherein the signal coupling capacitor is formed by the photodetector, and a polysilicon layer overlapping at least a portion of the photodetector, and separated from the photodetector by a dielectric layer.

16. The invention of claim 10 further comprising an indium tin oxide (ITO) electrode operatively connected to the photodetector to control the photodetector potential level.

17. The invention of claim 10 wherein the signal coupling capacitor is formed by the photodetector, and an indium tin oxide (ITO) layer overlapping at least a portion of the photodetector, and separated from the photodetector by a dielectric layer.

18. The invention of claim 10 wherein the reset mechanism further comprises a first transistor and a second transistor coupled respectively to the first and second electrical nodes.

19. A method of making an active pixel sensor:

providing a pixel having a photodetective element operatively coupled to reset means and amplification means;

AC coupling the photodetective element and the amplification means by a capacitive element that is electrically connected to the reset means on both sides of the capacitive element such that each side of the capacitive element is on a separate electrical node;

forming means for resetting both sides of the capacitive element to corresponding potentials; and

creating means for amplifying the potential stored on the capacitive element.

20. The method of claim 19 wherein the step of forming further comprises forming a reset transistor having a first source connected to a first side of the capacitive element and a second source connected to a second side of the capacitive element.

21. The method of claim 19 herein the step of placing further comprises placing a polysilicon layer over at least a portion of the photodetective element, separated from the photodetective element by a dielectric, and connected to the amplification means.

22. The method of claim 19 wherein the step of placing further comprises an ITO layer over at least a portion of the photodetective element, separated from the photodetective element by a dielectric, and connected to the amplification means.