Semiconductor device and method for forming the same

• US 6,589,829 B2
• Filed: 01/07/2002
• Issued: 07/08/2003
• Est. Priority Date: 03/27/1991
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takemura, Yasuhiko, Yamazaki, Shunpei
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): LATTIN, CHRISTOPHER W
• Application Number:
  US10/036,480
• Publication Number:
  US 20020160556A1
• Time in Patent Office: 547 Days
• Field of Search: 438/166, 438/164
• US Class Current: 438/164
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/0922 Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: Y10S 438/967 Semiconductor on specified insulator

Abstract

A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating and thermally contracted film over a substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm; and

forming a semiconductor film comprising silicon over said insulating and thermally contracted film, said semiconductor film having a thickness of 10-500 nm.

2. A method according to claim 1, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

3. A method according to claim 1, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, a polycrystalline semiconductor film and a semi-amorphous semiconductor film.

4. A method according to claim 1, wherein said semiconductor film further comprises germanium.

5. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating and thermally contracted film comprising silicon oxide over a substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm; and

forming a semiconductor film comprising silicon over said insulating and thermally contracted film, said semiconductor film having a thickness of 10-500 nm.

6. A method according to claim 5, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

7. A method according to claim 5, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, a polycrystalline semiconductor film and a semi-amorphous semiconductor film.

8. A method according to claim 5, wherein said semiconductor film further comprises germanium.

9. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating and thermally contracted film containing hydrogen at a concentration of 10-30 atomic % over a substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm; and

forming a semiconductor film comprising silicon over said insulating and thermally contracted film, said semiconductor film having a thickness of 10-500 nm.

10. A method according to claim 9, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

11. A method according to claim 9, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, a polycrystalline semiconductor film and a semi-amorphous semiconductor film.

12. A method according to claim 9, wherein said semiconductor film further comprises germanium.

13. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating and thermally contracted film over a substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm; and

forming a crystalline semiconductor film comprising silicon over said insulating and thermally contracted film, said crystalline semiconductor film having a thickness of 10-500 nm.

14. A method according to claim 13, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

15. A method according to claim 13, wherein said crystalline semiconductor film further comprises germanium.

16. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating and thermally contracted film comprising silicon oxide over a substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm; and

forming a crystalline semiconductor film comprising silicon formed over said insulating and thermally contracted film, said crystalline semiconductor film having a thickness of 10-500 nm.

17. A method according to claim 16, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

18. A method according to claim 16, wherein said crystalline semiconductor film further comprises germanium.

19. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating and thermally contracted film containing hydrogen at a concentration of 10-30 atomic % over a substrate, said insulating and thermally contracted film having a thickness of 50-1000 nm; and

forming a crystalline semiconductor film comprising silicon over said insulating and thermally contracted film, said crystalline semiconductor film having a thickness of 10-500 nm.

20. A method according to claim 19, wherein said insulating and thermally contracted film has a heat contraction in a range of 30-500 ppm.

21. A method according to claim 19, wherein said crystalline semiconductor film further comprises germanium.