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Method and apparatus for controlling anti-phase domains in semiconductor structures and devices

  • US 6,589,856 B2
  • Filed: 08/06/2001
  • Issued: 07/08/2003
  • Est. Priority Date: 08/06/2001
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a semiconductor structure capable of controlling antiphase domains in the semiconductor structure, the method comprising:

  • providing a monocrystalline silicon substrate;

    depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, the film having a thickness less than a thickness of the material that would result in strain-induced defects;

    forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate;

    epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film; and

    suppressing the formation of anti-phase domains during fabrication of the semiconductor structure.

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