Servo control for high emittance electron source

• US 6,590,216 B1
• Filed: 01/27/2000
• Issued: 07/08/2003
• Est. Priority Date: 01/27/2000
• Status: Expired due to Fees

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Doran, Samuel K., Golladay, Steven D.
• Primary Examiner(s): Lee, John R.
• Assistant Examiner(s): QUASH, ANTHONY G
• Application Number:
  US09/492,076
• Time in Patent Office: 1,258 Days
• Field of Search: 250/427, 250/503.1, 250/505.1, 250/363.01, 250/307, 250/308, 250/423.F, 315/111.81, 315/111.61, 315/383
• US Class Current: 250/427
• CPC Class Codes: H01J 1/135 Circuit arrangements therefor, e.g. for temperature control
• CPC Class Codes: H01J 37/242 Filament heating power supply or regulation circuits H01J37/241 takes precedence

Abstract

An automatic control servo system having a number of cascaded loops equal in number to the number of voltage sources applied to elements of a high-emittance electron source provides accurate and stable electron emission current control independently of beam energy and accommodates large differences in thermal mass between the elements of the electron source, as may be encountered in high-emittance, indirectly heated cathode electron sources. Individual loops of the system may be critically tuned independently of each other.

Claims

1. A system for regulating emission current of an electron source comprising

a filament for emitting electrons,

a first voltage source for heating said filament,

an emission current sensor,

a second voltage source for supplying an accelerating voltage and a voltage representing current flow at said second voltage source,

detecting means for detecting a difference between emission current detected by said emission current sensor and a set point,

means including cascaded feedback loops for controlling said first voltage source responsive to said detecting means and said voltage representing current flow at said second voltage source.

2. A system as recited in claim 1, wherein said means for controlling said first voltage source includes

means for evaluating an analog difference equation.

3. A system as recited in claim 1, wherein said detecting

means includes means for evaluating a digital difference equation.

4. A system as recited in claim 1, further including

a third voltage source for accelerating electrons emitted by said filament, said third voltage source having means for providing a voltage corresponding to current output of said third voltage source, and

a cathode element having electrons emitted by said filament incident thereon, and

further detecting means for detecting a difference between said voltage corresponding to current output of said third voltage source and an output of said detecting means and providing a control signal to said means for controlling said first voltage source.

5. A system as recited in claim 4, wherein said means for controlling said first voltage source includes

means for evaluating an analog difference equation.

6. A system as recited in claim 4, wherein said detecting means includes

means for evaluating a digital difference equation.

7. A system as recited in claim 4, wherein said further detecting means includes

means for evaluating a digital difference equation.

8. A method of controlling current in an accelerated beam in an electron beam tool, said method including steps of

detecting beam current,

controlling voltage applied to a filament with two cascaded feedback loops responsive to said beam current detected in accordance with said detecting step, a set point and a current output of an accelerating voltage source.

9. A method as recited in claim 8, including the further step of evaluating an analog difference equation.

10. A method as recited in claim 8, including the further step of

determining said set point to minimize emission current from said filament.

11. A method as recited in claim 8, including the further steps of

accelerating electrons between said filament and an indirectly heated cathode with a bombardment voltage,

wherein said voltage applied to said filament is controlled using three cascaded feedback loops in accordance with said beam current, said set point, said current output of said accelerating voltage source and a current output of a bombardment voltage source.

12. A method as recited in claim 11, including the further step of evaluating an analog difference equation.

13. A method as recited in claim 11, including the further step of evaluating a digital difference equation.

14. A method as recited in claim 13, including the further step of evaluating an analog difference equation.

15. A method as recited in claim 8, including the further step of evaluating a digital difference equation.

16. A method as recited in claim 15, including the further step of evaluating an analog difference equation.

17. A method of controlling current in an accelerated beam in an electron beam tool, said method including steps of

detecting beam current,

controlling voltage applied to a filament responsive to said beam current detected in said detecting step, a set point and a current output of an accelerating voltage source, wherein said set point is a desired value for said detected beam current and said voltage is controlled by cascaded feedback loops.

18. A method as recited in claim 17, wherein said detecting step includes

sampling said beam current.

19. A method as recited in claim 18, wherein said sampling is performed during non-exposure intervals.

20. A method of fabricating a semiconductor device using an electron beam tool comprising

a filament for emitting electrons,

a first voltage source for heating said filament,

an emission current sensor,

a second voltage source for supplying an accelerating voltage and a voltage representing current flow at said second voltage source,

detecting means for detecting a difference between emission current detected by said emission current sensor and a set point,

means including cascaded feedback loops for controlling said first voltage source responsive to said detecting means and said voltage representing current flow at said second voltage source, said method including steps of

accelerating electrons between said filament and an indirectly heated cathode with a bombardment voltage, wherein said voltage applied to said filament is controlled using cascaded feedback loops in accordance with said beam current, said set point, said current output of said accelerating voltage source and a current output of a bombardment voltage source,

exposing a resist with said electrons to define an element of said semiconductor device, and

completing said semiconductor device.