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Semiconductor device and process for production thereof

  • US 6,590,229 B1
  • Filed: 01/19/2000
  • Issued: 07/08/2003
  • Est. Priority Date: 01/21/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a pixel portion including a plurality of pixels, each of the pixels including a pixel TFT and a storage capacitance;

    said pixel TFT comprising;

    a light blocking film;

    an insulating film including at least a first insulating layer and a second insulating layer;

    an active film being formed over the light blocking film with the insulating film interposed therebetween;

    said storage capacitance comprising;

    an electrode being formed in a same layer as the light blocking film;

    an dielectric material;

    a semiconductor film having a same material as a drain region of the pixel TFT, wherein the dielectric material is formed of a portion of the insulating film.

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