×

Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors

  • US 6,590,251 B2
  • Filed: 07/23/2001
  • Issued: 07/08/2003
  • Est. Priority Date: 12/08/1999
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device comprising:

  • an insulating film including a contact hole in a semiconductor substrate;

    a conductive material film in the contact hole on the semiconductor substrate;

    a capacitor comprising a lower electrode on the conductive material film in the contact hole, a high dielectric film on the lower electrode and an upper electrode on the high dielectric film; and

    a barrier metal layer between the conductive material film in the contact hole and the lower electrode, the barrier metal layer comprising an A-B-N structure of a layer of reactive metal (A) that is on a layer of an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N), and that is on a layer of nitrogen (N).

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×