Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors
First Claim
1. A semiconductor device comprising:
- an insulating film including a contact hole in a semiconductor substrate;
a conductive material film in the contact hole on the semiconductor substrate;
a capacitor comprising a lower electrode on the conductive material film in the contact hole, a high dielectric film on the lower electrode and an upper electrode on the high dielectric film; and
a barrier metal layer between the conductive material film in the contact hole and the lower electrode, the barrier metal layer comprising an A-B-N structure of a layer of reactive metal (A) that is on a layer of an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N), and that is on a layer of nitrogen (N).
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Accused Products
Abstract
Semiconductor films include insulating films including contact holes in semiconductor substrates, capacitors comprising lower electrodes formed on conductive material films in the contact holes, high dielectric films formed on the lower electrodes and upper electrodes formed on the high dielectric films, and barrier metal layers positioned between conductive materials in the contact holes and the lower electrodes, the barrier metal layers including metal layers formed in A-B-N structures in which a plurality of atomic layers are stacked by alternatively depositing reactive metal (A), an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N). The composition ratios of the barrier metal layers are determined by the number of depositions of the atomic layers.
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Citations
13 Claims
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1. A semiconductor device comprising:
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an insulating film including a contact hole in a semiconductor substrate;
a conductive material film in the contact hole on the semiconductor substrate;
a capacitor comprising a lower electrode on the conductive material film in the contact hole, a high dielectric film on the lower electrode and an upper electrode on the high dielectric film; and
a barrier metal layer between the conductive material film in the contact hole and the lower electrode, the barrier metal layer comprising an A-B-N structure of a layer of reactive metal (A) that is on a layer of an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N), and that is on a layer of nitrogen (N). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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- 9. A semiconductor device having a capacitor comprising a lower electrode on a predetermined material film on a semiconductor substrate, a high dielectric film on the lower electrode and an upper electrode on the high dielectric film, wherein the lower electrode is an A-B-N structure of a layer of reactive metal (A) that is on a layer of an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N), and that is on a layer of nitrogen(N).
Specification