Cleaning method and cleaning equipment

• US 6,592,678 B1
• Filed: 10/12/2000
• Issued: 07/15/2003
• Est. Priority Date: 09/09/1997
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Yamasaka, Miyako, Shindo, Naoki, Kitahara, Shigenori, Kamikawa, Yuji
• Primary Examiner(s): Stinson, Frankie L.
• Application Number:
  US09/689,408
• Time in Patent Office: 1,006 Days
• Field of Search: 134/56.R, 134/57.R, 134/58.R, 134/113, 134/100.1, 134/99.1, 134/99.2, 134/95.1, 134/902, 134/18, 134/22.18, 134/25.1, 134/25.4, 134/36, 134/88, 137/102
• US Class Current: 134/18
• CPC Class Codes: B08B 3/08 the liquid having chemical or dissolving effect substances used, see the relevant classes
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/67057 with the semiconductor substrates being dipped in baths or vessels
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.

Claims

1. A cleaning method comprising the steps of:

dipping an object to be treated in a cleaning bath into which pure water is continuously supplied through a cleaning solution supply pipe, said cleaning solution supply pipe connecting the cleaning bath to a pure water supply source;

supplying a cleaning solution that is composed by injecting a chemical from a chemical storing container into the pure water flowing through the cleaning solution supply pipe to the cleaning bath;

detecting a temperature of the cleaning solution in the cleaning bath using temperature detecting means;

forming a compared signal between a detection signal outputted from the temperature detecting means and a previously given temperature information; and

controlling an amount of the chemical injected into the pure water on the basis of the temperature of the cleaning solution to thereby control the concentration of the chemical in the cleaning solution.

2. A cleaning method as set forth in claim 1, wherein the amount of said chemical injected into the pure water is controlled to be increased in response to a decreasing of the temperature of the cleaning solution.

3. A cleaning method as set forth in claim 1,

wherein the amount of said chemical injected into said pure water is changed incrementally during one step, and

wherein a relatively large amount of the chemical is injected during the initial stage of the one step.

4. A cleaning method as set forth in claim 1, wherein the step for controlling an amount of the chemical injected into the pure water comprises the steps of:

detecting a flow rate of the pure water supplied to the cleaning bath using flow rate detection means;

forming a flow rate compare signal between a detection signal outputted from the flow rate detection means and a previously given flow rate information; and

controlling the amount of said chemical injected into said pure water on the basis of the flow rate of the cleaning solution.