Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power led chip

• US 6,593,160 B2
• Filed: 02/06/2001
• Issued: 07/15/2003
• Est. Priority Date: 05/24/1999
• Status: Expired due to Term

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Lumileds Lighting US LLC (Apollo Global Management, Inc.)
• Inventors: Hofler, Gloria, Carter-Coman, Carrie, Kish, Fred A. Jr.
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US09/778,174
• Publication Number:
  US 20010004534A1
• Time in Patent Office: 889 Days
• Field of Search: 438/25-28, 438/108, 438/614, 438/FOR.369
• US Class Current: 438/26
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV). In a second embodiment of the invention, the diffusion barrier is made of titanium-tungsten-nitride (TiW:N). In addition to preventing the intermixing of the In of the solder layer with the Ag of the back reflector, the diffusion layer prevents degradation of the Ag reflective properties in the back reflector upon exposure to air. In an alternative embodiment, the diffusion layer is made of a non-conductive material.

Claims

1. A method of fabricating a light-emitting apparatus comprising:

depositing a layer of reflective material on a surface of a light-generating device;

forming a diffusion barrier on said layer of reflective material such that said layer of reflective material is positioned between said diffusion barrier and said light-generating device, said diffusion barrier being a single layer of uniform material composition;

depositing a layer of soldering material on said diffusion barrier so that said layer of reflective material and said layer of soldering material are physically separated by said diffusion barrier;

placing said light-generating device with said layer of reflective material, said diffusion layer and said layer of soldering material on a mounting surface such that said layer of soldering material is in contact with said mounting surface; and

melting said layer of solder material to attach said light-generating device to said mounting surface.

2. The method of claim 1 wherein forming a diffusion barrier comprises depositing nickel (Ni) on said layer of reflective material.

3. The method of claim 2 wherein depositing Ni comprises depositing a layer of Ni having a thickness of approximately 2,000 Angstroms to 15,000 Angstroms.

4. The method of claim 1 wherein forming a diffusion barrier comprises depositing nickel-vanadium (NiV) on said layer of reflective material.

5. The method of claim 4 wherein depositing NiV comprises depositing a layer of NiV having a thickness of approximately 1,000 Angstroms to 10,000 Angstroms.

6. The method of claim 5 wherein depositing NiV comprises depositing a layer of NiV having a thickness of approximately 2,000 Angstroms.

7. The method of claim 1 wherein forming a diffusion barrier comprises depositing a non-conductive material on said layer of reflective material.

8. The method of claim 1 wherein forming a diffusion barrier comprises depositing a dielectric material on said layer of reflective material.

9. The method of claim 1 wherein forming a diffusion barrier comprises depositing titanium-tungsten-nitride (TiW:

N) on said layer of reflective material.

10. The method of claim 1 wherein depositing a layer of reflective material comprises depositing said layer of reflective material on a back surface of a light-emitting diode.

11. The method of claim 1 wherein depositing a layer of reflective material comprises depositing silver-containing material on said surface of said light-generating device, and wherein depositing a layer of soldering material comprises depositing a material containing an element selected from a group consisting of indium, lead, tin and gold on said diffusion barrier.