Synthesis of layers, coatings or films using electrostatic fields
First Claim
Patent Images
1. A method, comprising:
- applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate where the first precursor layer includes a first chemical reactant, the second precursor layer includes a second chemical reactant, and the composition layer includes a chemical product yielded by a chemical reaction between the first chemical reactant and the second chemical reactant.
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Abstract
Systems and methods are described for synthesis of films, coatings or layers using electrostatic fields. A method includes applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.
116 Citations
27 Claims
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1. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate where the first precursor layer includes a first chemical reactant, the second precursor layer includes a second chemical reactant, and the composition layer includes a chemical product yielded by a chemical reaction between the first chemical reactant and the second chemical reactant. - View Dependent Claims (2, 3)
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4. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate further comprising reversing the electrostatic field.
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5. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the electrostatic field modifies a reaction trajectory.
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6. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the electrostatic filed is sufficient to generate a pressure between the first precursor and the second precursor layer. - View Dependent Claims (7)
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8. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein at least a portion of the second precursor layer melts and substantially no portion of the first precursor layer melts.
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9. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the first substrate includes a tool. - View Dependent Claims (10, 11, 12)
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13. A method, comprising:
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applying an electronic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein an electrode layer is located between the second precursor layer and the second substrate. - View Dependent Claims (14, 17)
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15. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the composition layer includes copper, indium and selenium. - View Dependent Claims (16)
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18. A method, comprising:
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applying electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a template is located between the first precursor layer and the first substrate.
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19. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a template is located between the second precursor layer and the second substrate.
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20. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a surfactant is located between the first precursor layer and the first substrate.
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21. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a surfactant is located between the first precursor and the second precursor.
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22. A method, comprising:
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applying electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a adhesion layer is located between the first precursor layer and the first substrate.
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23. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein an adhesion layer is located between the second precursor layer and the second substrate.
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24. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.
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25. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.
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26. A method, comprising:
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applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate further comprising depositing a buffer layer on the composition layer. - View Dependent Claims (27)
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Specification