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Semiconductor device having thin film transistors

  • US 6,593,592 B1
  • Filed: 01/28/2000
  • Issued: 07/15/2003
  • Est. Priority Date: 01/29/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a pixel portion including at least one pixel TFT, at least one storage capacitor, and a pixel electrode connected to the pixel TFT; and

    a driver circuit portion for driving said pixel portion, wherein the pixel portion comprises;

    an active layer of the pixel TFT;

    first conductive patterns over said active layer with an insulating film interposed therebetween;

    a first interlayer insulating film over said first conductive patterns;

    light-shielding films over the first conductive patterns with the first insulating film interposed therebetween;

    a second interlayer insulating film over the light-shielding films;

    a source wiring and a drain wiring on said second interlayer insulating film;

    a third interlayer insulating film covering said source wiring and said drain wiring; and

    a pixel electrode on said third interlayer insulating film, wherein said storage capacitor comprises a first storage capacitor and a second storage capacitor connected in parallel with each other, wherein said first storage capacitor comprises a portion of the active layer of said pixel TFT, the insulating film, and one of the first conductive patterns, and wherein said second storage capacitance comprises said one of the first conductive patterns, the first interlayer insulating film, and one of the light shielding films.

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