Semiconductor light-emitting device and method for producing same
First Claim
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1. A semiconductor light-emitting device, comprising:
- a substrate;
a nitride semiconductor light-emitting layer provided above the substrate; and
a nitride semiconductor saturable absorbing layer provided above the substrate, the saturable absorbing layer having characteristics in which saturation of light absorption occurs, wherein;
the semiconductor light-emitting device has self-pulsation characteristics due to the saturable absorbing layer; and
the semiconductor light-emitting device is characterized in that the saturable absorbing layer is doped with carbon.
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Abstract
A semiconductor light-emitting device of the present invention includes: a substrate; a light-emitting layer provided above the substrate; and a saturable absorbing layer provided above the substrate, the saturable absorbing layer having characteristics in which saturation of light absorption occurs. The semiconductor light-emitting device has self-pulsation characteristics due to the saturable absorbing layer, and the semiconductor light-emitting device is characterized in that the saturable absorbing layer is doped with carbon.
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7 Claims
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1. A semiconductor light-emitting device, comprising:
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a substrate;
a nitride semiconductor light-emitting layer provided above the substrate; and
a nitride semiconductor saturable absorbing layer provided above the substrate, the saturable absorbing layer having characteristics in which saturation of light absorption occurs, wherein;
the semiconductor light-emitting device has self-pulsation characteristics due to the saturable absorbing layer; and
the semiconductor light-emitting device is characterized in that the saturable absorbing layer is doped with carbon. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification