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Semiconductor light-emitting device and method for producing same

  • US 6,593,595 B2
  • Filed: 02/12/2002
  • Issued: 07/15/2003
  • Est. Priority Date: 02/14/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor light-emitting device, comprising:

  • a substrate;

    a nitride semiconductor light-emitting layer provided above the substrate; and

    a nitride semiconductor saturable absorbing layer provided above the substrate, the saturable absorbing layer having characteristics in which saturation of light absorption occurs, wherein;

    the semiconductor light-emitting device has self-pulsation characteristics due to the saturable absorbing layer; and

    the semiconductor light-emitting device is characterized in that the saturable absorbing layer is doped with carbon.

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