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Contact integration article

  • US 6,593,657 B1
  • Filed: 03/03/1997
  • Issued: 07/15/2003
  • Est. Priority Date: 03/03/1997
  • Status: Expired due to Term
First Claim
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1. A contact plug and metallization line structure comprising:

  • a semiconductor substrate having a contact surface thereon;

    an insulation layer having a contact hole therethrough extending to the contact surface on the semiconductor substrate;

    a plug substantially composed of a first metal and situated in said contact hole, said plug being electrically insulated by said insulation layer; and

    a metallization line substantially composed of a second metal, wherein said plug and said metallization line are electrically connected and have a substantially continuous composition gradient of a selected alloying element between said first metal and said second metal;

    wherein the contact surface has a first refractory metal silicide layer thereon in contact with a first end of said plug, and the contact hole has an inside wall upon which a refractory metal nitride layer is situated in contact with said insulation layer and said plug.

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