High-frequency integrated transistor module

• US 6,593,797 B1
• Filed: 06/18/2002
• Issued: 07/15/2003
• Est. Priority Date: 06/18/2002
• Status: Expired due to Fees

• Current Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Sowlati, Tirdad
• Primary Examiner(s): TRAN, TOAN V
• Application Number:
  US10/174,317
• Time in Patent Office: 392 Days
• Field of Search: 327/478, 327/480, 327/577, 327/108, 327/109, 327/112, 327/379-391, 327/310, 327/313
• US Class Current: 327/478
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H03F 2203/21178 Power transistors are made by coupling a plurality of single transistors in parallel
• CPC Class Codes: H03F 3/19 with semiconductor devices only
• CPC Class Codes: H03F 3/211 using a combination of several amplifiers H03F3/60 takes precedence

Abstract

A high-frequency integrated transistor module includes a bipolar transistor having at least one emitter finger, which is internally connected in series with a resistor to provide a DC current path for the circuit, and is internally connected in series with a capacitor to provide an RF current path for the module separate from the DC current path. The capacitor may be coupled to an RF ground connection, and the value of the capacitor may be selected to resonate with the value of the RF ground connection inductance in order to provide gain enhancement at a selected operating frequency range. In order to provide gain enhancement over a broader frequency bandwidth, two or more emitter fingers can be connected in series with respective capacitors of different values in order to provide at least two RF current paths having different resonant frequencies.

Claims

1. A high-frequency integrated transistor module comprising a bipolar transistor having at least one emitter finger, said at least one emitter finger being internally connected in series with a resistor within said module to provide a DC current path for said transistor module and internally connected directly to and in series with a capacitor within said module to provide an RF current path for said transistor module separate from said DC current path.

2. A high-frequency integrated transistor module as in claim 1, wherein said capacitor is coupled to an RF ground connection, and wherein a capacitance of said capacitor and an inductance of said RF ground connection are selected to provide gain enhancement in a desired operating frequency range.

3. A high-frequency integrated transistor module as in claim 2, wherein said resistor is coupled to a DC ground connection.

4. A high-frequency integrated transistor module as in claim 1, wherein said bipolar transistor comprises a plurality of emitter fingers, each emitter finger being internally connected in series with a respective resistor and with a respective capacitor within the module.

5. A high frequency integrated transistor module as in claim 1, comprising at least two emitter fingers, each of said emitter fingers being connected to a respective capacitor of a different value to provide at least two different RF current paths separate from said DC current path.

6. A high-frequency integrated transistor module as in claim 5, wherein each of said respective capacitors are coupled to an RF ground connection, and wherein the values of said respective capacitors and an inductance of said RF ground connection are selected to provide gain enhancement at different selected operating frequency ranges.