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High-frequency integrated transistor module

  • US 6,593,797 B1
  • Filed: 06/18/2002
  • Issued: 07/15/2003
  • Est. Priority Date: 06/18/2002
  • Status: Expired due to Fees
First Claim
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1. A high-frequency integrated transistor module comprising a bipolar transistor having at least one emitter finger, said at least one emitter finger being internally connected in series with a resistor within said module to provide a DC current path for said transistor module and internally connected directly to and in series with a capacitor within said module to provide an RF current path for said transistor module separate from said DC current path.

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