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First Claim
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1. A device having at least one active matrix panel, said active matrix panel comprising:
- a substrate having an insulating surface;
an active matrix circuit comprising first thin film transistors formed over the substrate;
a driving circuit comprising second thin film transistors for driving the active matrix circuit;
a first insulating film formed over the first and second thin film transistors;
at least one drain electrode formed on the first insulating film and electrically connected to a drain region of at least one of the first thin film transistors through a contact hole of the first insulating film;
a second insulating film formed over the first insulating film and the drain electrode;
an electromagnetic shield pattern formed over the second insulating film;
a fourth insulating film comprising an inorganic material on at least the electromagnetic shield pattern;
a third insulating film comprising an organic resin formed over the second and fourth insulating films and the electromagnetic shield pattern; and
at least one reflective pixel electrode formed over the third insulating film and electrically connected to the drain electrode through a hole opened through the third insulating film, the electromagnetic shield pattern and the second insulating film, wherein the third insulating film extends into a gap between the reflective pixel electrode and an inner edge of the opening of the electromagnetic shield pattern, wherein the third insulating film extends into a gap between the reflective pixel electrode and an inner edge of the opening of the fourth insulating film.
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Abstract
There is disclosed a structure for radiating heat generated by TFTs in a liquid crystal panel. A DLC film 125 is provided on a resin interlayer film 123 disposed on the TFTs 105, 109, and 113. The DLC film 125 can be easily formed on the resin film, and has high heat conductivity, so that the film can be made to function as a heat radiating layer.
162 Citations
82 Claims
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1. A device having at least one active matrix panel, said active matrix panel comprising:
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a substrate having an insulating surface;
an active matrix circuit comprising first thin film transistors formed over the substrate;
a driving circuit comprising second thin film transistors for driving the active matrix circuit;
a first insulating film formed over the first and second thin film transistors;
at least one drain electrode formed on the first insulating film and electrically connected to a drain region of at least one of the first thin film transistors through a contact hole of the first insulating film;
a second insulating film formed over the first insulating film and the drain electrode;
an electromagnetic shield pattern formed over the second insulating film;
a fourth insulating film comprising an inorganic material on at least the electromagnetic shield pattern;
a third insulating film comprising an organic resin formed over the second and fourth insulating films and the electromagnetic shield pattern; and
at least one reflective pixel electrode formed over the third insulating film and electrically connected to the drain electrode through a hole opened through the third insulating film, the electromagnetic shield pattern and the second insulating film, wherein the third insulating film extends into a gap between the reflective pixel electrode and an inner edge of the opening of the electromagnetic shield pattern, wherein the third insulating film extends into a gap between the reflective pixel electrode and an inner edge of the opening of the fourth insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A device having at least one active matrix panel, said active matrix panel comprising:
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a substrate having an insulating surface;
an active matrix circuit comprising first thin film transistors formed over the substrate;
a driving circuit comprising second thin film transistors for driving the active matrix circuit;
a first insulating film formed over the first and second thin film transistors;
at least one drain electrode formed on the first insulating film and electrically connected to a drain of at least one of the first thin film transistors through a contact hole of the first insulating film;
a second insulating film comprising an organic resin formed over the first insulating film and the drain electrode;
at least one pixel electrode formed over the second insulating film and electrically connected to one of the first thin film transistors via the drain electrode, wherein an insulating layer comprising silicon nitride is formed between the first and second insulating films and is formed over the drain electrode. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A device having at least one active matrix panel, said active matrix panel comprising:
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a substrate having an insulating surface;
an active matrix circuit comprising first thin film transistors formed over the substrate;
a driving circuit comprising second thin film transistors for driving the active matrix circuit;
a first insulating film formed over the first and second thin film transistors;
at least one wiring formed on the first insulating film and electrically connected to one of a source region or a drain region of at least one of the first and second thin film transistors through a contact hole of the first insulating film;
a second insulating film comprising an organic resin formed over the first insulating film and the wiring;
at least one pixel electrode formed over the second insulating film and electrically connected to one of the first thin film transistors, wherein an insulating layer comprising silicon nitride is formed between the first and second insulating films and is formed on the wiring. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. A device having at least one active matrix panel, said active matrix panel comprising:
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a substrate having an insulating surface;
an active matrix circuit comprising first thin film transistors formed over the substrate;
a driving circuit comprising second thin film transistors for driving the active matrix circuit;
a first insulating film formed over the first and second thin film transistors;
at least one first electrode formed on the first insulating film and electrically connected to the first thin film transistors;
at least one second electrode formed on the first insulating film and electrically connected to the second thin film transistors;
a second insulating film comprising an organic resin formed over the first insulating film and the first and second electrodes;
at least one pixel electrode formed over the second insulating film and electrically connected to one of the first thin film transistors, wherein an insulating layer comprising silicon nitride is formed on the first insulating film, the at least one first electrode and the at least second electrode. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56, 57)
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58. A device having at least one active matrix panel, said active matrix panel comprising:
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a substrate having an insulating surface;
an active matrix circuit comprising first thin film transistors formed over the substrate;
a driving circuit comprising second thin film transistors for driving the active matrix circuit;
a first insulating film formed over the first and second thin film transistors;
at least one first electrode formed on the first insulating film and electrically connected to the first thin film transistors;
at least one second electrode formed on the first insulating film and electrically connected to the second thin film transistors;
a second insulating film comprising an organic resin formed over the first insulating film and the first and second electrodes;
an electromagnetic shield pattern formed on the second insulating film;
a third insulating film formed over the second insulating film and the electromagnetic shield pattern; and
at least one pixel electrode formed over the third insulating film and electrically connected to one of the first thin film transistors, wherein an insulating layer comprising silicon nitride is formed on the first insulating film, the at least one first electrode and the at least second electrode. - View Dependent Claims (59, 60, 61, 62, 63, 64, 65, 66)
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67. A device having at least one active matrix panel, said active matrix panel comprising:
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a substrate having an insulating surface;
an active matrix circuit comprising first thin film transistors formed over the substrate;
a driving circuit comprising second thin film transistors for driving the active matrix circuit;
a first insulating film formed over the first and second thin film transistors;
at least one first electrode formed on the first insulating film and electrically connected to the first thin film transistors;
at least one second electrode formed on the first insulating film and electrically connected to the second thin film transistors;
an insulating layer formed on the first insulating film and covering the first electrode and the second electrode wherein the insulating film comprises silicon nitride;
a capacitor forming electrode formed on the insulating layer comprising silicon nitride to form a capacitor associated with the first thin film transistor;
a second insulating film comprising an organic resin formed on the insulating layer comprising silicon nitride and the capacitor forming electrode;
at least one pixel electrode formed over the second insulating film and electrically connected to one of the first thin film transistors. - View Dependent Claims (68, 69, 70, 71, 72, 73, 74)
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75. A device having at least one active matrix panel, said active matrix panel comprising:
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a substrate having an insulating surface;
an active matrix circuit comprising first thin film transistors formed over the substrate;
a driving circuit comprising second thin film transistors for driving the active matrix circuit;
a first insulating film formed over the first and second thin film transistors;
at least one wiring formed on the first insulating film and electrically connected to at least one of the first and second thin film transistors;
an insulating layer comprising silicon nitride formed on the first insulating film and the at least one wiring;
a second insulating film comprising an organic resin formed over the first insulating film and the at least one wiring with the insulating layer interposed therebetween;
an electromagnetic shield pattern formed on the second insulating film;
a third insulating film comprising an organic resin formed over the second insulating film and the electromagnetic shield pattern; and
at least one pixel electrode formed over the third insulating film and electrically connected to one of the first thin film transistors. - View Dependent Claims (76, 77, 78, 79, 80, 81, 82)
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Specification