Connector capable of considerably suppressing a high-frequency current

• US 6,595,802 B1
• Filed: 04/04/2001
• Issued: 07/22/2003
• Est. Priority Date: 04/04/2000
• Status: Expired due to Fees

• Current Assignee: NEC Tokin Corporation (Yageo Corporation)
• Original Assignee: NEC Tokin Corporation (Yageo Corporation)
• Inventors: Kamei, Koji, Watanabe, Shinya
• Primary Examiner(s): Feild, Lynn D.
• Assistant Examiner(s): LE, THANH TAM T
• Application Number:
  US09/826,168
• Time in Patent Office: 839 Days
• Field of Search: 439/607, 439/608, 439/620, 439/886
• US Class Current: 439/620.05
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: H01F 1/0063 in a non-magnetic matrix, e.g. granular solids granular films H01F10/007
• CPC Class Codes: H01R 13/719 specially adapted for high frequency, e.g. with filters

Abstract

In a connector having at least one contact (3a,3b) held by an insulator (2a), a high-frequency current suppressor (4a,4b) is provided on the contact or the insulator. The high-frequency current suppressor serves to attenuate a high-frequency current flowing through the contact and having a frequency within a frequency band between several tens MHz and several GHz.

Claims

1. A connector comprising:

an insulator;

at least one contact held by said insulator; and

a high-frequency current suppressor for attenuating a high-frequency current flowing through said at least one contact and having a frequency within a frequency band between several tens MHz and several GHz, said high-frequency current suppressor being made of a magnetic substance of a magnetic composition comprising M, X and Y, where M is a metallic magnetic material consisting of Fe, Co, and/or Ni, X being element or elements other than M and Y, and Y being F, N, and/or O, said M—

X—

Y magnetic composition having a concentration of M in the composition so that said M—

X—

Y magnetic composition has a saturation magnetization of 35-80% of that of the metallic bulk of magnetic material comprising M alone, said magnetic composition having the maximum value μ

″

_max of imaginary part μ

″

of relative permeability in a frequency range of 0.1-10 gigahertz (GHz).

2. A connector as claimed in claim 1, wherein said magnetic substance has saturation magnetization between 80% and 60% of that of a metal magnetic material comprising the component M alone.

3. A connector as claimed in claim 1, wherein said magnetic substance has a d.c. electric resistance between 100 μ

Ω

·

cm and 700 μ

Ω

·

cm.

4. A connector as claimed in claim 1, which has a permeability frequency response of a relatively broad band where a relative bandwidth bwr is 150% or more, said relative bandwidth bwr is determined as a percentage ratio of bandwidth between two frequency points which shows the imaginary part of relative permeability as a half value μ

″

₅₀ of the maximum value μ

″

_max, to center frequency of said bandwidth.

5. A connector as claimed in claim 4, wherein said magnetic substance has saturation magnetization between 60% and 35% of that of a metal magnetic material comprising the component M alone.

6. A connector as claimed in claim 4, wherein said magnetic substance has a d.c. electric resistance greater than 500 μ

Ω

·

cm.

7. A connector as claimed in claim 1, wherein the component X of said magnetic substance is at least one selected from C, B, Si, Al, Mg, Ti, Zn, Hf, Sr, Nb, Ta, and rare earth elements.

8. A connector as claimed in claim 1, wherein the component M of said magnetic substance is present in a granular structure where particles or grains of the component M are dispersed in a matrix of a compound of the components X and Y.

9. A connector as claimed in claim 8, wherein said magnetic substance is formed so that said particles in the granular structure have an average particle size between 1 nm and 40 nm.

10. A connector as claimed in claim 1, wherein said magnetic substance has an anisotropic magnetic field of 47400 A/m or less.

11. A connector as claimed in claim 1, wherein the M—

X—

Y composition is an Fe—

Al—

O composition.

12. A connector as claimed in claim 1, wherein the M—

X—

Y composition is an Fe—

Si—

O composition.

13. A connector as claimed in claim 1, wherein said suppressor surrounds an area of contract between said contact and another contact, and through which area of contact a high-frequency current flows.

15. A connector as claimed in claim 1, wherein said high-frequency current suppressor is deposited on said at least one contact so as to shield said at least one contact.

16. A connector as claimed in claim 1, wherein said high-frequency current suppressor is interposed between said insulator and said at least one contact so as to shield said at least one contact.

17. A connector as claimed in claim 1, wherein said high-frequency current suppressor is produced by sputtering.

18. A connector as claimed in claim 1, wherein said high-frequency current suppressor is produced by vapor deposition.

19. A connector as claimed in claim 1, wherein said high-frequency current suppressor is preliminarily deposited on a metallic plate material for use in producing said at least one contact.

20. A connector as claimed in claim 1, wherein said high-frequency current suppressor is deposited on the surface of said at lest one contact after it is produced by cutting a metallic plate material fur use in producing said at least one contact.

21. A connector as claimed in claim 1, wherein said connector is a socket connector in which said at least one contact is of a socket type.

22. A connector as claimed in claim 1, wherein said connector is a pin connector in which said at lest one contact is of a pin type.

23. A connector as claimed in claim 1, wherein said high-frequency current suppressor has a thickness between 0.3 μ

m and 20 μ

m.

24. A connector as claimed in claim 1, wherein said high-frequency current suppressor is a thin-film magnetic substance.

25. A connector as claimed in claim 1, wherein said high-frequency current suppressor exhibits the conductivity in a frequency range lower than several tens MHz.

14. A connector as claimed in clam 1, wherein said high-frequency current suppressor is deposited on said insulator so as to shield said at least one contact when said connector is connected to a mating connector.