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III-V nitride substrate boule and method of making and using the same

  • US 6,596,079 B1
  • Filed: 03/13/2000
  • Issued: 07/22/2003
  • Est. Priority Date: 03/13/2000
  • Status: Expired due to Term
First Claim
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1. A method of making a (Al,Ga,In)N boule, comprising:

  • providing a native (Al,Ga,In) N seed crystal for the boule; and

    growing a (Al,Ga,In) N material on the seed crystal by vapor phase epitaxy, to yield said boule.

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