III-V nitride substrate boule and method of making and using the same
First Claim
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1. A method of making a (Al,Ga,In)N boule, comprising:
- providing a native (Al,Ga,In) N seed crystal for the boule; and
growing a (Al,Ga,In) N material on the seed crystal by vapor phase epitaxy, to yield said boule.
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Abstract
A boule formed by high rate vapor phase growth of Group III-V nitride boules (ingots) on native nitride seeds, from which wafers may be derived for fabrication of microelectronic device structures. The boule is of microelectronic device quality, e.g., having a transverse dimension greater than 1 centimeter, a length greater than 1 millimeter, and a top surface defect density of less than 107 defects cm−2. The Group III-V nitride boule may be formed by growing a Group III-V nitride material on a corresponding native Group III-V nitride seed crystal by vapor phase epitaxy at a growth rate above 20 micrometers per hour.
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Citations
49 Claims
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1. A method of making a (Al,Ga,In)N boule, comprising:
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providing a native (Al,Ga,In) N seed crystal for the boule; and
growing a (Al,Ga,In) N material on the seed crystal by vapor phase epitaxy, to yield said boule. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. A method of making a doped (Al,Ga,In)N boule, comprising:
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providing a native (Al,Ga,In) N seed crystal for the boule;
growing a (Al,Ga,In) N material on the seed crystal by vapor phase epitaxy, to yield said boule; and
doping said boule by nuclear transmutation doping.
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49. A method of making a (Al,Ga,In)N boule, comprising:
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providing a native (Al ,Ga,In) N seed crystal for the boule; and
growing a (Al,Ga,In) N material on the seed crystal by vapor phase epitaxy, with growth of a parting layer therein, to yield said boule, so that said boule contains said parting layer, wherein said parting layer is more highly absorptive of a selected radiation than said (Al,Ga,In)N material.
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Specification