Limiting hydrogen ion diffusion using multiple layers of SiO2 and Si3N4

• US 6,596,576 B2
• Filed: 12/21/2001
• Issued: 07/22/2003
• Est. Priority Date: 04/10/2001
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Chou, Chao-Sheng, Lin, Kuan-Ting, Fu, Tzy-Tzan
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Le, Thao P
• Application Number:
  US10/032,359
• Publication Number:
  US 20020146879A1
• Time in Patent Office: 578 Days
• Field of Search: 438/230, 438/231, 438/696, 438/699, 438/791, 438/792
• US Class Current: 438/230
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers

Abstract

A method of fabricating a semiconductor device having a gate structure comprising SiO₂ and Si₃N₄ that exhibits reduced hydrogen diffusion during low temperature chemical vapor deposition of silicon nitride. In the method, a silicon dioxide (SiO₂) layer is deposited on a wafer after a gate structure is fabricated. A barrier layer is formed on the silicon dioxide (SiO₂) layer. Then a silicon nitride layer is formed over it by low temperature chemical vapor deposition. The barrier layer reduces, and may even altogether prevent, diffusion of the hydrogen absorbed by the silicon nitride layer into the gate oxide and channel during the low temperature chemical vapor deposition of silicon nitride.

Claims

1. A method for fabricating a semiconductor device having a gate structure comprising SiO₂ and Si₃N₄, the method comprising:

defining an active region on a substrate;

forming an oxide layer on the substrate;

forming a polysilicon layer on said oxide layer;

forming a silicide layer on said polysilicon layer;

defining the gate structure by etching the oxide layer, the polysilicon layer and the silicide layer;

implanting ions into the substrate using the gate structure as a mask;

depositing a first deposition layer on the substrate;

positioning the substrate in a reaction chamber;

providing in the reaction chamber, an energized gas comprising a nitrogen component that reacts with a portion of the first deposition layer to form a silicon oxynitride layer on the first deposition layer;

providing in the reaction chamber, a deposition gas comprising a hydrogen containing gas to deposit a second deposition layer on the silicon oxynitride layer, wherein the diffusion of hydrogen into the oxide layer is substantially reduced by the silicon oxynitride layer; and

etching the first and second deposition layers and the silicon oxynitride layer to form multiple spacer layers against the gate structure.

2. A method according to claim 1 wherein the first deposition layer is a silicon oxide layer.

3. A method according to claim 1 wherein the second deposition layer is a silicon nitride layer deposited by a low pressure chemical vapor deposition method.

4. A method according to claim 1 wherein the step of reacting the nitrogen component of the energized gas is performed for about 50 seconds to about 360 seconds.

5. A method for fabricating a semiconductor device having a gate structure comprising SiO₂ and Si₃N₄, the method comprising:

defining an active region on a substrate;

forming an oxide layer on the substrate;

forming a polysilicon layer on the oxide layer;

forming a suicide layer on the polysilicon layer;

defining said gate structure by etching the oxide layer, the polysilicon layer and the suicide layer;

implanting ions into the substrate by using the gate structure as a mask;

forming a first deposition layer on the substrate;

forming a second deposition layer on the first deposition layer;

positioning the substrate having the first deposition layer and the second deposition layer in a reaction chamber;

performing an annealing process to anneal the second deposition layer;

providing in the reaction chamber, a deposition gas comprising a hydrogen containing gas to form a third deposition layer on the annealed second deposition layer, wherein the diffusion of hydrogen into the oxide layer is substantially reduced by the annealed second deposition layer; and

etching the plurality of deposition layers to form multiple spacer layers against the gate structure.

6. A method according to claim 5 wherein the first deposition layer comprises a silicon oxide layer.

7. A method according to claim 5 wherein the second deposition layer comprises a silicon nitride layer deposited by a low pressure chemical vapor deposition method.

8. A method according to claim 5 wherein the second deposition layer is formed to a thickness ranging from about 20 angstroms to about 50 angstroms.

9. A method according to claim 5 wherein the annealing process is performed at temperature of from about 800°

C. to about 1000°

C.

10. A method according to claim 5, wherein the annealing process is performed for from 10 seconds to 30 seconds.

11. The method according to claim 5, wherein the third deposition layer comprises a silicon nitride layer deposited by a low pressure chemical vapor deposition method.

12. A method for fabricating a semiconductor device having a gate structure comprising SiO₂ and Si₃N₄, the method comprising:

defining an active region on a substrate;

forming an oxide layer on the substrate;

forming a polysilicon layer on the oxide layer;

forming a suicide layer on the polysilicon layer;

defining the gate structure by etching the oxide layer, the polysilicon layer and the suicide layer;

implanting ions into the substrate by using the gate structure as a mask;

forming a first deposition layer on the wafer;

forming a second deposition layer on the first deposition layer, the second deposition layer being adapted to substantially reduce the diffusion of hydrogen therethrough;

providing a deposition gas comprising a hydrogen containing gas to form a third deposition layer on the second deposition layer; and

etching the first, second and third deposition layers to form multiple spacer layers against the gate structure.

13. A method according to claim 12 wherein the first deposition layer comprises a silicon oxide layer.

14. A method according to claim 12 wherein the second deposition layer comprises a silicon nitride layer deposited by a low pressure chemical vapor deposition method.

15. A method according to claim 12 wherein the step of forming a second deposition layer on said first deposition layer, comprises

(a) providing the substrate having said first deposition layer in a reaction chamber;

(b) delivering a nitrogen-containing gas into said reaction chamber, whereby a portion of the nitrogen-containing gas will be chemically absorbed on the surface of the first deposition layer;

(c) pumping out said reaction chamber to remove the remaining nitrogen-containing gas; and

(d) delivering a silicon-containing gas into the reaction chamber, whereby a chemical reaction occurs between the absorbed nitrogen-containing gas and the silicon-containing gas to form a silicon nitride layer on the surface of the first deposition layer.

16. A method according to claim 15 wherein the second deposition layer comprises a thickness in the range of from about 20 angstroms to about 50 angstroms.

17. The method according to claim 15, wherein said third deposition layer comprises silicon nitride deposited by a low pressure chemical vapor deposition method.

18. A method according to claim 15 wherein (b) comprises delivering a first deposition gas comprising the nitrogen-containing gas, the first deposition gas being substantially absent silicon-containing gas, and wherein (d) comprises delivering a second deposition gas comprising the silicon-containing gas, the second deposition gas being substantially absent nitrogen-containing gas.