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Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser

  • US 6,597,017 B1
  • Filed: 03/07/2000
  • Issued: 07/22/2003
  • Est. Priority Date: 03/26/1999
  • Status: Expired due to Fees
First Claim
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1. A surface emitting semiconductor laser comprising:

  • a semiconductor base layer made of a semiconductor crystal whose in-plane lattice constant is a0;

    a cladding layer or DBR mirror including a first layer made of a semiconductor crystal having an in-plane lattice constant a1, and a second layer made of a semiconductor crystal having an in-plane lattice constant a2, wherein

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