Controlling birefringence in an optical waveguide

• US 6,597,852 B2
• Filed: 12/15/2000
• Issued: 07/22/2003
• Est. Priority Date: 12/15/1999
• Status: Expired due to Term

• Current Assignee: Lumentum Technology UK Limited (Oclaro (North America), Inc.)
• Original Assignee: Bookham Incorporated (Oclaro (North America), Inc.)
• Inventors: Kling, Laurent
• Primary Examiner(s): Sanghavi, Hemang
• Assistant Examiner(s): ROJAS, OMAR R
• Application Number:
  US09/736,180
• Publication Number:
  US 20010024559A1
• Time in Patent Office: 949 Days
• Field of Search: 385/129-132, 385/141, 385/144, 653/86, 654/23, 654/30
• US Class Current: 385/132
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/12147 Coupler
• CPC Class Codes: G02B 2006/12178 Epitaxial growth
• CPC Class Codes: G02B 6/105 having optical polarisation effects
• CPC Class Codes: G02B 6/132 by deposition of thin films

Abstract

A method of controlling birefringence in a rib waveguide structure manufactured in silicon is describes. The rib waveguide structure comprises an elongated rib element having an upper face and two side faces. According to the method, a blanket layer of silicon nitride is formed to a predetermined thickness over the rib waveguide structure directly abutting the upper face and side faces. The thickness of the blanket layer is selected to control birefringence. A silicon rib waveguide structure incorporating such a layer and a evanescent coupler structure are also described.

Claims

1. A method of controlling birefringence in a rib waveguicle structure manufactured in silicon, the rib waveguide structure comprising an elongated silicon rib element having an upper silicon face and two side silicon faces, the method comprising:

forming a blanket layer of silicon nitride to a predetermined thickness over said rib waveguide structure directly abutting said upper silicon face and side silicon faces.

2. A method according to claim 1, wherein the blanket layer of silicon nitride extends over the substrate flanks on either side of the rib waveguide structure.

8. A method according to claim 1, wherein the predetermined thickness of the layer of silicon nitride is 1000A for a waveguide structure having a width of 3-5 microns.

9. A method according to claim 2, wherein the predetermined thickness of the layer of silicon nitride is 1000A for a waveguide structure having a width of 3-5 microns.

16. A method according to claim 1, wherein the blanket layer of silicon nitride extends over the substrate flanks on either side of the rib waveguide structure.

17. A method according to claim 2, wherein the blanket layer of silicon nitride extends over the substrate flanks on either side of the rib waveguide structure.

25. A method according to claim 1 wherein the waveguide structure is manufactured in a silicon-on-insulator wafer.

26. A method according to claim 2 wherein the waveguide structure is manufactured in a silicon-on-insulator wafer.

3. A method of controlling birefringence in a rib waveguide structure manufactured in silicon, the rib waveguide structure comprising an elongated silicon rib element having an upper silicon face and two side silicon faces, the method comprising:

growing a layer of oxide over the upper silicon face and side silicon faces;

stripping the oxide layer to reveal the upper silicon face and side silicon faces; and

forming a layer of silicon nitride to a predetermined thickness over said rib waveguide structure directly abutting said upper silicon face and side silicon faces.

10. A method according to claim 3, wherein the predetermined thickness of the layer of silicon nitride is 1000A for a waveguide structure having a width of 3-5 microns.

18. A method according to claim 3, wherein the blanket layer of silicon nitride extends over the substrate flanks on either side of the rib waveguide structure.

27. A method according to claim 3 wherein the waveguide structure is manufactured in a silicon-on-insulator wafer.

4. Use of a layer of silicon nitride in a method of fabricating a rib waveguide structure including an elongated silicon rib element to control birefringence by depositing said layer to a predetermined thickness directly on said elongated silicon rib element.

11. A use according to claim 4, wherein the predetermined thickness of the layer of silicon nitride is 1000A for a waveguide structure having a width of 3-5 microns.

19. A use according to claim 4, wherein the blanket layer of silicon nitride extends over the substrate flanks on either side of the rib waveguide structure.

28. A use according to claim 4 wherein the waveguide structure is manufactured in a silicon-on-insulator wafer.

5. A method of manufacturing a silicon rib waveguide structure comprising:

forming an elongated silicon rib element in a silicon substrate, the elongated rib element having an upper silicon face and two side silicon faces; and

forming a layer of silicon nitride to a predetermined thickness over said elongated silicon rib element directly abutting said upper silicon face and side silicon faces, the predetermined thickness being selected such as to control birefringence in the rib waveguide structure.

12. A method according to claim 5, wherein the predetermined thickness of the layer of silicon nitride is 1000A for a waveguide structure having a width of 3-5 microns.

20. A method according to claim 5, wherein the blanket layer of silicon nitride extends over the substrate flanks on either side of the rib waveguide structure.

29. A method according to claim 5 wherein the waveguide structure is manufactured in a silicon-on-insulator wafer.

6. A method of manufacturing a silicon rib waveguide structure, the method comprising:

forming an elongated rib element having an upper silicon face and two side silicon faces in a silicon substrate;

growing a layer of oxide over the upper silicon face and side silicon faces;

stripping the oxide layer to reveal the upper silicon face and side silicon faces; and

forming a layer of silicon nitride to a predetermined thickness over said rib waveguide structure directly abutting said upper silicon face and side silicon faces.

13. A method according to claim 6, wherein the predetermined thickness of the layer of silicon nitride is 1000A for a waveguide structure having a width of 3-5 microns.

21. A method according to claim 6, wherein the blanket layer of silicon nitride extends over the substrate flanks on either side of the rib waveguide structure.

30. A method according to claim 6 wherein the waveguide structure is manufactured in a silicon-on-insulator wafer.

7. A silicon rib waveguide structure comprising an elongated silicon rib element having an upper silicon face and two side silicon faces and a layer of silicon nitride directly abutting said upper silicon face and side silicon faces and having a predetermined thickness selected to control birefringence in the silicon rib waveguide structure.

14. A structure according to claim 7, wherein the predetermined thickness of the layer of silicon nitride is 1000A for a waveguide structure having a width of 3-5 microns.

22. A structure according to claim 7, wherein the blanket layer of silicon nitride extends over the substrate flanks on either side of the rib waveguide structure.

23. A structure according to claim 14, wherein the blanket layer of the silicon nitride extends over the substrate flanks on either side of the rib waveguide structure.

31. A structure according to claim 7 wherein the waveguide structure is manufactured on a silicon-on-insulator wafer.

15. An evanescent coupler structure comprising first and second silicon rib waveguides each comprising an elongated silicon rib element having an upper silicon face and two side silicon faces and a layer of silicon nitride directly abutting said upper silicon face and side silicon faces and having a predetermined thickness selected to control birefringence in the evanescent coupler.

24. A structure according to claim 15, wherein the blanket layer of silicon nitride extends over the substrate flanks on either side of the rib waveguide structure.

32. A structure according to claim 15 wherein the waveguide structure is manufactured in a silicon-on-insulator wafer.