Cantilever epitaxial process
First Claim
1. A process for cantilever growth of a material, comprising:
- etching a pattern onto a substrate, said pattern comprising at least one cantilever support region;
forming a nucleation layer on said substrate;
growing in a reactor by a vapor-phase growth technique a middle layer on said nucleation layer on said substrate, said middle layer providing surfaces for subsequent lateral cantilever growth;
growing in said reactor without an intermediate removal step on said middle layer a growth layer of material with a lateral growth rate of the growth layer approximately equal to or greater than the vertical growth rate relative to the orientation of the substrate, said middle layer remaining maskless.
3 Assignments
0 Petitions
Accused Products
Abstract
A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the reactor at any time during the processing. A nucleation layer is first grown upon which a middle layer is grown to provide surfaces for subsequent lateral cantilever growth. The lateral growth rate is controlled by altering the reactor temperature, pressure, reactant concentrations or reactant flow rates. Semiconductor materials, such as GaN, can be produced with dislocation densities less than 107/cm2.
115 Citations
21 Claims
-
1. A process for cantilever growth of a material, comprising:
-
etching a pattern onto a substrate, said pattern comprising at least one cantilever support region;
forming a nucleation layer on said substrate;
growing in a reactor by a vapor-phase growth technique a middle layer on said nucleation layer on said substrate, said middle layer providing surfaces for subsequent lateral cantilever growth;
growing in said reactor without an intermediate removal step on said middle layer a growth layer of material with a lateral growth rate of the growth layer approximately equal to or greater than the vertical growth rate relative to the orientation of the substrate, said middle layer remaining maskless. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A process for cantilever growth of a Group III-N material, comprising:
-
etching a pattern onto a substrate, said pattern comprising at least one cantilever support region;
forming a nucleation layer on said substrate, said nucleation layer selected from a Group III-N material;
growing in a reactor by a vapor-phase growth technique a Group III-N middle layer on said nucleation layer on said substrate, said middle layer less than approximately 1 micrometer in thickness and providing surfaces for subsequent lateral cantilever growth;
growing in said reactor at approximately 1100°
C. without an intermediate removal step on said middle layer a growth layer of a Group III-N material with a lateral growth rate of the growth layer approximately equal to or greater than the vertical growth rate relative to the orientation of the substrate, said middle layer remaining maskless.- View Dependent Claims (17, 18)
-
-
19. A process for cantilever growth of a material, comprising:
-
etching a pattern onto a substrate, said pattern comprising at least one cantilever support region and at least one trench;
forming a nucleation layer on said substrate;
growing in a reactor by a vapor-phase growth technique a middle layer on said nucleation layer on said substrate, said middle layer providing surfaces for subsequent lateral cantilever growth;
growing in said reactor without an intermediate removal step on said middle layer a growth layer of material wherein the growth is stopped prior to the lateral cantilever growth originating from the cantilever support region coalescing with the growth layer originating from the trench. - View Dependent Claims (20, 21)
-
Specification