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Process for growing metalloid thin films utilizing boron-containing reducing agents

  • US 6,599,572 B2
  • Filed: 01/18/2001
  • Issued: 07/29/2003
  • Est. Priority Date: 01/18/2000
  • Status: Expired due to Term
First Claim
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1. A method of growing elemental Cu, Ag, Au, Pd, Pt, Rh, Ir, Ru and/or Os thin films on a substrate by a chemical vapor deposition type process comprising:

  • vaporizing a metal source material and a reducing agent capable of reducing the metal source material to elemental metal;

    feeding the metal source material and the reducing agent into a reaction space; and

    contacting the metal source material and the reducing agent with the substrate, wherein the reducing agent is a boron compound having the general formula (II)

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