Process for growing metalloid thin films utilizing boron-containing reducing agents

• US 6,599,572 B2
• Filed: 01/18/2001
• Issued: 07/29/2003
• Est. Priority Date: 01/18/2000
• Status: Expired due to Term

• Current Assignee: ASM International NV
• Original Assignee: ASM Microchemistry Oy (ASM International NV)
• Inventors: Kaipio, Sari Johanna, Elers, Kai-Erik, Soininen, Pekka Juha, Saanila, Ville Antero
• Primary Examiner(s): Beck, Shrive P.
• Assistant Examiner(s): MARKHAM, WESLEY D
• Application Number:
  US09/764,692
• Publication Number:
  US 20010009695A1
• Time in Patent Office: 922 Days
• Field of Search: 427/248.1, 427/249.1, 427/249.5, 427/249.17, 427/249.18, 427/249.19, 427/250, 427/253, 427/255.28, 427/255.39, 427/255.23, 427/255.38, 427/255.391, 427/255.392, 117/88, 117/104, 438/680, 438/685, 438/686, 438/687
• US Class Current: 427/249.18
• CPC Class Codes: C23C 16/08 from metal halides
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal source material and the reducing agent are contacted with the substrate. The reducing agent is a boron compound having at least one boron-carbon bond, and the boron compound forms gaseous by-products when reacted with the metal source material. Generally, the boron compound is an alkylboron compound with 0-3 halogen groups attached to the boron. The metal source material and the reducing agent may be fed continuously or in pulses during the deposition process.

Claims

1. A method of growing elemental Cu, Ag, Au, Pd, Pt, Rh, Ir, Ru and/or Os thin films on a substrate by a chemical vapor deposition type process comprising:

vaporizing a metal source material and a reducing agent capable of reducing the metal source material to elemental metal;

feeding the metal source material and the reducing agent into a reaction space; and

contacting the metal source material and the reducing agent with the substrate, wherein the reducing agent is a boron compound having the general formula (II)

2. A method according to claim 1 wherein the boron compound is an alkylboron compound.

3. A process for growing copper and/or gold thin films on a substrate by a chemical vapor deposition type process, comprising:

vaporizing a metal source material and a reducing agent capable of reducing the metal source material to elemental metal;

feeding the metal source material and the reducing agent into a reaction space; and

contacting the metal source material and the reducing agent with the substrate, wherein the reducing agent is a boron compound containing at least one boron-carbon bond, and wherein the boron compound is capable of forming gaseous reaction by-products when reacted with the metal source material.

4. A method according to claim 3 wherein the boron compound is an alkylboron compound.

5. A method of growing thin film carbides of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Co and/or Ni on a substrate by a chemical vapor deposition type process comprising:

vaporizing a metal source material and a reducing agent capable of reducing the metal source material to elemental metal;

feeding the metal source material and the reducing agent into a reaction space; and

contacting the metal source material and the reducing agent with the substrate, wherein the reducing agent is a boron compound that has the general formula (II)

6. A method according to claim 5 wherein the boron compound is an alkylboron compound.

7. A method according to claim 5 wherein the boron compound is a carbon source chemical of the growing carbide thin film.

8. A method of growing tungsten carbide thin films on a substrate by a chemical vapor deposition type process comprising:

vaporizing a metal source material and a reducing agent capable of reducing the metal source material to elemental metal;

feeding the metal source material and the reducing agent into a reaction space; and

contacting the metal source material and the reducing agent with the substrate, wherein the reducing agent is a boron compound that has the general formula (II)

9. A method according to claim 8 wherein the boron compound is an alkylboron compound.

10. A method according to claim 8 wherein the boron compound is a carbon source chemical of the growing carbide thin film.