Method of fabricating a thin film including a protective layer as a mask

• US 6,599,783 B2
• Filed: 05/24/2001
• Issued: 07/29/2003
• Est. Priority Date: 05/25/2000
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Takatoku, Makoto
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Brewster, William M.
• Application Number:
  US09/865,104
• Publication Number:
  US 20020066902A1
• Time in Patent Office: 796 Days
• Field of Search: 438/148, 438/166, 257/66
• US Class Current: 438/148
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

A thin film transistor has a laminated structure comprising a semiconductor thin film, a gate insulator formed in contact with the surface of the semiconductor thin film, and a gate electrode disposed on the face side of the semiconductor thin film, and is formed on a substrate in a predetermined plan view shape. To fabricate the thin film transistor, first, a first step is carried out in which a semiconductor thin film having a clean surface is formed over the substrate. Next, a second step is carried out in which a protective film PF is formed so as to cover the clean surface of the semiconductor thin film. Further, in a third step, the semiconductor thin film is patterned together with the protective film PF according to the predetermined plan view shape of the thin film transistor. Thereafter, a fourth step is carried out in which the protective film PF is removed from the upper side of the patterned semiconductor thin film to expose a clean surface. Subsequently, a fifth step is carried out in which a gate insulator is formed in contact with the exposed surface of the semiconductor thin film.

Claims

1. A method of producing a liquid crystal display device comprising a pair of substrates jointed to each other with a gap therebetween, a liquid crystal disposed in said gap, pixel electrodes and thin film transistors for driving said pixel electrodes provided on one of said substrates, wherein

said thin film transistor has a laminated structure comprising a semiconductor thin film, an insulating film provided in contact with the surface of said semiconductor thin film, and a gate electrode disposed on the face side or the back side of said semiconductor thin film, and

said thin film transistor is formed on one of said substrates in a predetermined plan view shape by:

a first step for forming a semiconductor thin film having a clean surface over a substrate,

a second step of forming a protective film so as to cover said clean surface of said semiconductor thin film,

a third step of patterning said semiconductor thin film together with said protective film according to said plan view shape of said thin film transistor, said step of patterning including forming a photoresist over said protective film and etching same,

a fourth step of removing said protective film from the upper side of said patterned semiconductor thin film to expose said clean surface, and

a fifth step of forming an insulating film in contact with said exposed surface of said semiconductor thin film.

2. A method of producing a liquid crystal display device according to claim 1, wherein said first step comprises forming a semiconductor thin film consisting of silicon being amorphous or being polycrystalline with a comparatively small grain size, followed by irradiation with laser light to convert said amorphous or polycrystalline silicon to polycrystalline silicon having a comparatively large grain size.

3. A method of producing a liquid crystal display device according to claim 1, wherein said first step comprises forming a semiconductor thin film consisting of silicon being amorphous or being polycrystalline with a comparatively small grain size, followed by a heat treatment to obtain polycrystalline silicon having a comparatively large grain size through solid phase growth.

4. A method of producing a liquid crystal display device according to claim 1, wherein said second step comprises forming a protective film consisting of an insulating substance.

5. A method of producing a liquid crystal display device according to claim 4, wherein said second step comprises thermally oxidizing the surface of a semiconductor thin film consisting of silicon to form a protective film consisting of silicon oxide.

6. A method of producing a liquid crystal display device according to claim 4, wherein said second step comprises forming a protective film by building up silicon oxide through chemical vapor deposition.

7. A method of producing a liquid crystal display device according to claim 1, wherein said second step comprises forming said protective film by building up a semiconductor substance.

8. A method of producing a liquid crystal display device according to claim 1, wherein said second step comprises forming a protective film having a thickness of not less than 5 nm.

9. A method of producing a liquid crystal display device according to claim 1, wherein said fourth step comprises removing said protective film by wet etching in which a chemical having a dissolving function is made to act in a flowing manner without circulatorily using said chemical.

10. A method of producing a liquid crystal display device according to claim 1, further comprising a sixth step of forming a gate electrode on said insulating film formed in contact with the clean surface of said semiconductor thin film.

11. A liquid crystal display device comprising a pair of substrates jointed to each other with a gap therebetween, a liquid crystal disposed in said gap, pixel electrodes and thin film transistors for driving said pixel electrodes provided on one or said substrates, and a counter electrode provided on the other of said substrates, wherein

said thin film transistor has a laminated structure comprising a semiconductor thin film, an insulating film formed in contact with the surface of said semiconductor thin film, and a gate electrode disposed on the face side or the back side of said semiconductor thin film, and is formed on one of said substrates in a predetermined plan view shape,

said semiconductor thin film is provided by forming a semiconductor thin film over said substrate in the state of having a clean surface, thereafter forming a protective film so as to cover said clean surface, then pattering said semiconductor thin film together with said protective film according to said predetermined plan view shape, and removing said protective film to expose said clean surface, said patterning including forming a photoresist over said protective film and etching same, and

said insulating film is formed in contact with said exposed surface of said semiconductor thin film.

12. A liquid crystal display device according to claim 11, wherein said semiconductor thin film is provided by forming a semiconductor thin film consisting of silicon being amorphous or being polycrystalline with a comparatively small grain size, followed by irradiation with laser light to convert said amorphous or polycrystalline silicon to polycrystalline silicon having a comparatively large grain size.

13. A liquid crystal display device according to claim 11, wherein said semiconductor thin film is provided by forming a semiconductor thin film consisting of silicon being amorphous or being polycrystalline with a comparatively small grain size, followed by a heat treatment to obtain polycrystalline silicon having a comparatively large grain size through solid phase growth.

14. A liquid crystal display device according to claim 11, wherein said protective film consists of an insulating substance.

15. A liquid crystal display device according to claim 14, wherein said insulating substance is silicon oxide obtained by thermally oxidizing the surface of a semiconductor thin film consisting of silicon.

16. A liquid crystal display device according to claim 14, wherein said insulating substance is silicon oxide built up by chemical vapor deposition.

17. A liquid crystal display device according to claim 11, wherein said protective film consists of a semiconductor substance.

18. A liquid crystal display device according to claim 11, wherein said protective film has a thickness of not less than 5 nm.

19. A liquid crystal display device according to claim 11, wherein said protective film is removed by wet etching in which a chemical having a dissolving function is made to act in a flowing manner without circulatorily using said chemical.

20. A liquid crystal display device according to claim 11, wherein said gate electrode is disposed on said insulating film formed in contact with said clean surface of said semiconductor thin film.