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Field-effect semiconductor devices

  • US 6,600,194 B2
  • Filed: 03/09/2001
  • Issued: 07/29/2003
  • Est. Priority Date: 03/10/2000
  • Status: Expired due to Term
First Claim
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1. A field-effect semiconductor device comprising a semiconductor body having a plurality of side-by-side device cells at one major surface of the body, wherein each device cell has a source region that is separated by a channel-accommodating region of a first conductivity type from an underlying drain region of an opposite, second conductivity type, a gate electrode is capacitively coupled to the channel-accommodating region to control a conduction channel between the source and drain regions, and the device has at least one drain connection that extends in a drain trench from the one major surface to the underlying drain region, characterized in that the channel-accommodating region extends laterally to the drain trench, the drain trench extends through the thickness of the channel-accommodating region to the underlying drain region, the drain connection is separated from the channel-accommodating region by an intermediate insulating layer on side-walls of the drain trench, and wherein the drain region comprises a more highly doped electrode region underlying a less highly doped drift region, and the drain connection in the drain trench extends through the thickness of both the channel-accommodating region and the drain drift region to reach the more highly doped drain ode region.

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